公开(公告)号：EP2212931B1

公开(公告)日：2018-09-12

申请号：EP08854645.2

申请日：2008-11-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SABATHIL, Matthias ,  PETER, Matthias

IPC: H01L33/32 ,  H01L33/04 ,  H01L33/14 ,  H01S5/343 ,  H01S5/323

CPC classification number: H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

公开(公告)号：EP2191520B1

公开(公告)日：2017-04-26

申请号：EP08801300.8

申请日：2008-09-04

Applicant: Osram Opto Semiconductors Gmbh

Inventor： HAHN, Berthold ,  WEIMAR, Andreas ,  BAUR, Johannes ,  SABATHIL, Matthias ,  PLAINE, Glenn-Ives

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/14 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/10 ,  H01L33/145 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP3097346A1

公开(公告)日：2016-11-30

申请号：EP15701139.6

申请日：2015-01-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SOBCZYK, Sandra ,  SINGER, Frank ,  MÖNCH, Wolfgang ,  SABATHIL, Matthias

IPC: F21K99/00 ,  F21V8/00 ,  F21V5/04 ,  F21Y101/00 ,  F21Y103/00

CPC classification number: F21K9/64 ,  F21K9/61 ,  F21K9/90 ,  F21V3/02 ,  F21V5/043 ,  F21Y2103/10 ,  F21Y2115/10

Abstract: The invention relates to a lighting means (1), comprising: an optical element (3), which has a main extension direction (Z), a radiation inlet surface (3a), and a radiation outlet surface (3b); and at least two light-emitting diodes (2), which each comprise at least one light-emitting diode chip (21) and a radiation passage surface (2a), which extends along a main extension plane (XZ); wherein the at least two lighting-emitting diodes (2) are arranged along the main extension direction (Z) of the optical element (3), the radiation inlet surface (3a) of the optical element (3) faces the radiation passage surfaces (2a) of the at least two light-emitting diodes (2), the optical element (3) is formed as a solid body, the radiation inlet surface (3a) of the optical element (3) is flat or convexly curved, and the radiation outlet surface (3b) of the optical element (3) comprises at least one recess (4) in the optical element (3).

Abstract translation: 本发明涉及一种照明装置（1），包括：具有主延伸方向（Z），辐射入口表面（3a）和辐射出口表面（3b）的光学元件（3） 和至少两个发光二极管（2），每个发光二极管（2）分别包括至少一个沿着主延伸平面（XZ）延伸的发光二极管芯片（21）和辐射通道表面（2a）; 其中所述至少两个发光二极管（2）沿着所述光学元件的主延伸方向（Z）布置。 （3）中，所述光学元件（3）的所述辐射入射面（3a）与所述至少两个发光二极管（2）的所述辐射通路面（2a）相对，所述光学元件（3）形成为固体 光学元件（3）的辐射入口表面（3a）是平坦的或凸起的，并且光学元件（3）的辐射出射表面（3b）包括光学元件中的至少一个凹部（4） 3）。

公开(公告)号：EP1911103B1

公开(公告)日：2016-08-31

申请号：EP06775767.4

申请日：2006-07-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： AVRAMESCU, Adrian ,  HÄRLE, Volker ,  HÖPPEL, Lutz ,  PETER, Matthias ,  SABATHIL, Matthias ,  STRAUSS, Uwe

IPC: H01L33/04 ,  H01S5/343 ,  H01S5/34 ,  H01L33/06 ,  H01L33/32 ,  H01S5/30 ,  H01S5/32

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3202 ,  H01S5/3407 ,  H01L2924/00

公开(公告)号：EP2193555B1

公开(公告)日：2016-07-06

申请号：EP08834030.2

申请日：2008-08-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： RODE, Patrick ,  ENGL, Karl ,  STRASSBURG, Martin ,  HÖPPEL, Lutz ,  SABATHIL, Matthias

IPC: H01L33/40 ,  H01L33/58 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L33/007 ,  H01L33/40 ,  H01L33/58 ,  H01L2933/0091

公开(公告)号：EP2191547B1

公开(公告)日：2015-11-18

申请号：EP08801251.3

申请日：2008-08-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SABATHIL, Matthias ,  BRICK, Peter ,  EICHLER, Christoph

IPC: B82Y20/00 ,  H01S5/026 ,  H01S5/34 ,  H01S5/40 ,  H01S5/04

CPC classification number: H01S5/041 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/34 ,  H01S5/4043

公开(公告)号：EP2368278B1

公开(公告)日：2014-03-12

申请号：EP09796292.2

申请日：2009-11-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： GMEINWIESER, Nikolaus ,  SABATHIL, Matthias ,  LEBER, Andreas

IPC: H01L33/22

CPC classification number: H01L33/22

公开(公告)号：EP2483923A1

公开(公告)日：2012-08-08

申请号：EP10763590.6

申请日：2010-09-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： RODE, Patrick ,  HÖPPEL, Lutz ,  VON MALM, Norwin ,  SABATHIL, Matthias ,  MOOSBURGER, Jürgen

IPC: H01L25/075 ,  H01L33/62 ,  H01L27/15

CPC classification number: H01L27/153 ,  G01R31/318516 ,  H01H85/0417 ,  H01H85/32 ,  H01L23/5256 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/62 ,  H01L51/50 ,  H01L2224/73265 ,  H01L2924/00 ,  H01L2924/0002 ,  H02H3/046 ,  H03K17/74 ,  H03K19/17728 ,  H05B33/083 ,  H05B33/0893 ,  Y10T29/49204

Abstract: The invention relates to an optoelectronic semiconductor chip, comprising a first semiconductor functional area (21) having a first terminal (211) and a second terminal (212), and a contact structure (4) for electrically contacting the optoelectronic semiconductor chip, the contact structure being connected to the first semiconductor functional area (21) in an electrically conductive manner. The contact structure (4) has a conductor structure (41, 71, 42) that can be disconnected, wherein - when the conductor structure is not disconnected, an operating current path is established across the first terminal of the first semiconductor functional area and the second terminal, the operating current path being interrupted when the conductor structure is disconnected, or - when the conductor structure (41, 71, 42) is disconnected, an operating current path is established across the first terminal (211) of the first semiconductor functional area (21) and the second terminal (212), wherein when the conductor structure (41, 71, 42) is not disconnected, the conductor structure (41, 71, 42) connects the first terminal (211) to the second terminal (212) and short circuits the first semiconductor functional area (21).

公开(公告)号：EP2342765A2

公开(公告)日：2011-07-13

申请号：EP09756407.4

申请日：2009-10-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BRICK, Peter ,  LUCKNER, Hagen ,  SABATHIL, Matthias

IPC: H01L33/38

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A luminescent diode chip is disclosed which comprises a series of semiconductor layers, including an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer that touches and contacts the series of semiconductor layers in an electrically conducting manner. The first electrical connection layer touches and contacts the series of semiconductor layers especially by means of a plurality of contact surfaces (21). Said luminescent diode chip specifically has a non-homogeneous current density distribution or current distribution in the series of semiconductor layers as a result of a non-homogeneous distribution of a mass per unit area of the contact surfaces along a main direction in which the series of semiconductor layers extends.

公开(公告)号：EP2286470A1

公开(公告)日：2011-02-23

申请号：EP09765426.3

申请日：2009-05-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SABATHIL, Matthias ,  HERRMANN, Siegfried ,  BARCHMANN, Bernd

IPC: H01L33/00

CPC classification number: H01L33/62 ,  H01L24/24 ,  H01L24/82 ,  H01L33/385 ,  H01L33/40 ,  H01L33/486 ,  H01L33/58 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/00

Abstract: A radiation-emitting component is provided, which has a carrier (1) and at least one semiconductor chip (2) disposed thereon. The semiconductor chip (2) has an active layer for producing electromagnetic radiation and a first contact layer (21). In order to electrically contact the at least one semiconductor chip (2), the carrier (1) has at least one first and a second contact structure (4a, 4b). The semiconductor chip (2) is connected by the first contact layer (21) to the first contact structure (4a) in an electrically conductive manner. A passivation layer (5) is provided at least in some regions on at least one lateral surface of the semiconductor chip (2). A second contact layer (6), which leads from the surface of the semiconductor chip (2) facing away from the carrier (1) via the passivation layer (5) to the second contact structure (4b), is provided on at least one partial region of the passivation layer (5). The semiconductor chip (2) has no epitaxial growth substrate (10). Furthermore, a method for producing such a component is provided.