GALVANIC ISOLATION DEVICE
    123.
    发明申请

    公开(公告)号:US20190081133A1

    公开(公告)日:2019-03-14

    申请号:US16178352

    申请日:2018-11-01

    Abstract: A galvanic isolation device includes a first integrated circuit (IC) die that has communication circuitry formed in a circuit layer below the top surface. A first conductive plate is formed on the IC die proximate the top surface, and is coupled to the communication circuitry. A dielectric isolation layer is formed over a portion of the top surface of the IC after the IC is fabricated such that the dielectric isolation layer completely covers the conductive plate. A second conductive plate is juxtaposed with the first conductive plate but separated by the dielectric isolation layer such that the first conductive plate and the second conductive plate form a capacitor. The second conductive plate is configured to be coupled to a second communication circuit.

    METHODS AND APPARATUS FOR SPARK GAP DEVICES WITHIN INTEGRATED CIRCUITS

    公开(公告)号:US20180190556A1

    公开(公告)日:2018-07-05

    申请号:US15396121

    申请日:2016-12-30

    Abstract: In a described example, an apparatus includes: an integrated circuit die having multiple terminals; a leadframe having leads for external connections, at least some of the leads electrically coupled to at least one of the multiple terminals of the integrated circuit die; a first electrode having a first end portion; a second electrode having a second end portion positioned proximal to and spaced apart from the first end portion of the first electrode, the first end portion and the second end portion spaced by a spark gap; encapsulation material surrounding the integrated circuit die to form a packaged integrated circuit having a cavity surrounding the first end portion, the second end portion, and the spark gap so that the first end portion of the first electrode, the second end portion of the second electrode and the spark gap are spaced from the encapsulation material.

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