公开(公告)号：EP1707588A1

公开(公告)日：2006-10-04

申请号：EP05703775.6

申请日：2005-01-18

Applicant: Asahi Kasei EMD Corporation

Inventor： KANADA, Takayuki ,  KATAOKA, Yasuhiro ,  NIWA, Motohiro

IPC: C08G73/22 ,  G03F7/037 ,  G03F7/022

CPC classification number: C08G73/10 ,  C08L79/08 ,  G03F7/0233 ,  G03F7/037 ,  Y10S430/107

Abstract: Disclosed is a hydroxy polyamide represented by the following general formula (1) and having a 5-amino isophthalic acid derivative structure in the main chain structure. (1) (In the formula, m and n represent integers, X represents at least one tetravalent organic group, Y represents at least one divalent organic group having a 5-amino isophthalic acid derivative structure, and Z represents at least one divalent organic group.)

Abstract translation: 公开了由下述通式（1）表示的羟基聚酰胺，在主链结构中具有5-氨基间苯二甲酸衍生物结构。 （1）（式中，m和n表示整数，X表示至少一个四价有机基团，Y表示至少一个具有5-氨基间苯二甲酸衍生物结构的二价有机基团，Z表示至少一个二价有机基团 。）

公开(公告)号：EP1498697A1

公开(公告)日：2005-01-19

申请号：EP03712808.9

申请日：2003-03-20

Applicant: Asahi Kasei EMD Corporation ,  SENTRON AG

Inventor： KAKUTA, Katsumi ,  SCHOTT, Christian

IPC: G01D5/14 ,  G01R33/02

CPC classification number: G01D5/145 ,  G01D5/14 ,  G01D5/24409

Abstract: The present invention provides an angle detection apparatus that permits to make accurate angle detection for a magnetic field, regardless of a simple circuit configuration and an angle detection system for detecting an angle of the magnetic field. Reference character HE denotes Hall elements; 2 an XY switching unit; 4 a modulation/drive unit; 6 a DDA; 8 a P-to-P detection unit; 10 and 12 S/H units; 14 a post-processing circuit; 16 an S/H unit; 18 a held component designation circuit; 20 an X and Y designation input unit; and 22 an operational amplifier. According to this angle detection apparatus, it becomes possible to directly calculate tan θ from an X component held in the S/H unit (10) and a Y component held in the S/H unit (12) without applying individual arithmetic processing to calculate sin θ and cos θ and further calculate tan θ.

Abstract translation: 本发明提供了一种角度检测装置，其允许对磁场进行精确的角度检测，而不管简单的电路配置以及用于检测磁场角度的角度检测系统。 参考字符HE表示霍尔元件; 2是XY开关单元; 4调制/驱动单元; 6 DDA; 8是P-P检测单元; 10和12 S / H单位; 14是后处理电路; 16个S / H单位; 18是保持元件指定电路; 20个X和Y指定输入单元; 和22个运算放大器。 根据该角度检测装置，可以直接计算tanδ; 来自保持在S / H单元（10）中的X分量和保持在S / H单元（12）中的Y分量，而不应用单独的算术处理来计算sin＆amp; 和cos＆thetas; 并进一步计算棕褐色。

公开(公告)号：EP2897171A3

公开(公告)日：2015-10-14

申请号：EP15155549.7

申请日：2008-12-19

Applicant: Asahi Kasei EMD Corporation

Inventor： Koricic, Marko ,  Suligoj, Tomislav ,  Mochizuki, Hidenori ,  Morita, Soichi

IPC: H01L29/735 ,  H01L21/331 ,  H01L21/8249 ,  H01L21/8222 ,  H01L21/8248 ,  H01L27/06 ,  H01L29/08 ,  H01L21/225 ,  H01L29/10 ,  H01L21/265

CPC classification number: H01L27/0623 ,  H01L21/2257 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/8249 ,  H01L29/0808 ,  H01L29/1008 ,  H01L29/1045 ,  H01L29/6625 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/735

Abstract: A configuration of a lateral transistor suited for the hybrid-integration (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor, and a method for manufacturing the lateral transistor are provided. A semiconductor device includes a HCBT 100 and a CMOS transistor 200 hybrid-integrated therein. The HCBT 100 has an open region 21 opened by etching a device isolating oxide film 6 surrounding an n-hill layer 11, an emitter electrode 31A and a collector electrode 31B each of which is formed in the open region 21 and is composed of a polysilicon film having such a thickness as to expose the n-hill layer 11 exposed by etching the device isolating oxide film, and an ultrathin oxide film 24 covering at least a part of the n-hill layer 11. The ultrathin oxide film 24 functions as a protective film for protecting the n-hill layer 11 from being etched when the polysilicon film is etched to form the emitter 20 electrode 31A and the collector electrode 31B.

公开(公告)号：EP2741095B1

公开(公告)日：2015-08-19

申请号：EP14150252.6

申请日：2007-03-28

Applicant: Asahi Kasei EMD Corporation

Inventor： Kataoka, Makoto ,  Kakuta, Katsumi ,  Yamagata, Yo ,  Kanayama, Yuichi

IPC: G01R33/07 ,  H01L43/06

CPC classification number: G01R33/07 ,  G01R33/0011 ,  H01L27/22 ,  H01L43/06

公开(公告)号：EP2897171A2

公开(公告)日：2015-07-22

申请号：EP15155549.7

申请日：2008-12-19

Applicant: Asahi Kasei EMD Corporation

Inventor： Koricic, Marko ,  Suligoj, Tomislav ,  Mochizuki, Hidenori ,  Morita, Soichi

IPC: H01L29/735 ,  H01L21/331 ,  H01L21/8249 ,  H01L21/8222 ,  H01L21/8248 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10 ,  H01L21/265

CPC classification number: H01L27/0623 ,  H01L21/2257 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/8249 ,  H01L29/0808 ,  H01L29/1008 ,  H01L29/1045 ,  H01L29/6625 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/735

Abstract: A configuration of a lateral transistor suited for the hybrid-integration (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor, and a method for manufacturing the lateral transistor are provided. A semiconductor device includes a HCBT 100 and a CMOS transistor 200 hybrid-integrated therein. The HCBT 100 has an open region 21 opened by etching a device isolating oxide film 6 surrounding an n-hill layer 11, an emitter electrode 31A and a collector electrode 31B each of which is formed in the open region 21 and is composed of a polysilicon film having such a thickness as to expose the n-hill layer 11 exposed by etching the device isolating oxide film, and an ultrathin oxide film 24 covering at least a part of the n-hill layer 11. The ultrathin oxide film 24 functions as a protective film for protecting the n-hill layer 11 from being etched when the polysilicon film is etched to form the emitter 20 electrode 31A and the collector electrode 31B.

Abstract translation: 提供适合于高性能横向晶体管（HCBT）和CMOS晶体管的混合集成（BiCMOS）的横向晶体管的配置以及用于制造横向晶体管的方法。 半导体器件包括其中混合集成的HCBT 100和CMOS晶体管200。 HCBT 100具有通过蚀刻围绕n-hill层11的器件隔离氧化物膜6而开放的开放区域21，发射极电极31A和集电极电极31B，每个开口区域形成在开放区域21中并且由多晶硅 具有使得通过蚀刻器件隔离氧化物膜而暴露的n-hill层11暴露的厚度的膜和覆盖n-hill层11的至少一部分的超薄氧化物膜24.超薄氧化物膜24用作 当对多晶硅膜进行蚀刻以形成发射极电极31A和集电极电极31B时保护n-hill层11不被蚀刻。

公开(公告)号：EP2543961B1

公开(公告)日：2014-12-24

申请号：EP12187416.8

申请日：2008-05-23

Applicant: Asahi Kasei EMD Corporation

Inventor： Yamashita, Masaya ,  Kitamura, Toru

IPC: G01C17/38 ,  G01P15/18 ,  G01P21/00 ,  G01C25/00

CPC classification number: G01C17/38 ,  G01C25/005 ,  G01P15/18 ,  G01P21/00

Abstract: Even if a measurement data group is not a measurement data group that is obtained in a space where the magnitude of a vector physical quantity to be measured is uniform, an offset with high reliability is estimated. The reliability of the estimated offset is further improved. A vector physical quantity comprised of a plurality of components is repeatedly detected and vector physical quantity data group is obtained, and a difference vector group is calculated from the obtained vector physical quantity data group. A reference point included in the vector physical quantity data group is estimated based on a predetermined evaluation formula using the calculated difference vector group. Whether the calculated difference vector group is suitable for the estimation of the reference point is determined. Only a predetermined difference vector group is output for the estimation of the reference point based on the determination result. Moreover, the degree of reliability of the estimated reference point contains the difference vector group, and only a predetermined reference point is output as an offset based on the determination result.

公开(公告)号：EP2741095A1

公开(公告)日：2014-06-11

申请号：EP14150252.6

申请日：2007-03-28

Applicant: Asahi Kasei EMD Corporation

Inventor： Kataoka, Makoto ,  Kakuta, Katsumi ,  Yamagata, Yo ,  Kanayama, Yuichi

IPC: G01R33/07 ,  H01L43/06

CPC classification number: G01R33/07 ,  G01R33/0011 ,  H01L27/22 ,  H01L43/06

Abstract: The present invention relates to a magnetic sensor with which magnetic characteristics are made extremely stable by consideration of an area of contact of a base layer of a magnetic substance and a semiconductor substrate. On a semiconductor substrate (111) a plurality of Hall elements (112a, 112b) are embedded so as to be coplanar to a top surface of the semiconductor substrate while being mutually spaced apart by a predetermined distance, and above the Hall elements and the semiconductor substrate, a base layer (114), having coefficient of thermal expansion differing from that of the Hall elements and partially covers a region of each Hall elements, is formed via a protective layer (113), and a magnetic flux concentrator (115), having an area larger than the base layer and with magnetic amplification, is formed on the base layer. An area of contact of the base layer of the magnetic substance and the semiconductor substrate is made small to lessen the generation of an offset voltage.

Abstract translation: 磁传感器技术领域本发明涉及考虑到磁性物质的基底层与半导体基板的接触面积而使磁特性非常稳定的磁传感器。 在半导体衬底（111）上嵌入多个霍尔元件（112a，112b），以便与半导体衬底的顶表面共面一个预定距离相互间隔开，并且在霍尔元件和半导体 通过保护层（113）和磁通集中器（115）形成具有与霍尔元件的热膨胀系数不同的部分的基底层（114），并部分地覆盖每个霍尔元件的区域， 在基底层上形成具有大于基底层并且具有磁放大的面积的区域。 使磁性物质的基底层与半导体基板的接触面积小，以减少偏移电压的产生。

公开(公告)号：EP1970713B1

公开(公告)日：2013-03-27

申请号：EP06843397.8

申请日：2006-12-27

Applicant: Asahi Kasei EMD Corporation

Inventor： KITAMURA, Toru ,  YAMASHITA, Masaya

IPC: G01P21/00 ,  G01P15/18

CPC classification number: G01P21/00 ,  G01P15/18

公开(公告)号：EP1788396B1

公开(公告)日：2013-03-20

申请号：EP05780257.1

申请日：2005-08-12

Applicant: Asahi Kasei EMD Corporation

Inventor： YAMADA, Rikita ,  HIKIDA, Koichi ,  SASAKI, Hiroyuki ,  YAMASHITA, Masaya

IPC: G01P15/00 ,  G01P21/00 ,  G01P15/12 ,  G01P15/18

CPC classification number: G01P15/18 ,  G01P15/123 ,  G01P21/00 ,  G01P2015/084

Abstract: The present invention relates to an acceleration measuring device capable of acquiring the offset or both of the sensitivity and the offset necessary for correcting the output of a triaxial acceleration sensor. The invention is provided with an acceleration sensor 1 for detecting the acceleration in a triaxial direction, a data acquisition portion 5A for acquiring the triaxial output data, a data selecting portion 13 for judging whether repeatedly acquired triaxial output data are appropriate to make a selection, a data accumulating portion 14 for accumulating the thus selected triaxial output data, a reference point estimating portion 15 estimating coordinate values of the reference point determined in the three-dimensional cartesian space by referring to the distribution of a predetermined number of accumulated triaxial output data in a three-dimensional cartesian space when each axial component is given as a coordinate value, and an offset correction/calculation portion 17 for correcting the offset of the triaxial output data of the acceleration sensor 1 on the basis of coordinate values of the reference point.

公开(公告)号：EP1736853A3

公开(公告)日：2013-01-09

申请号：EP06010804.0

申请日：2006-05-26

Applicant: Asahi Kasei EMD Corporation ,  POLYMATECH CO., LTD.

Inventor： Takatsuka, Toshinori ,  Honmatsu, Yoshifumi, R&D Center of Polyamec Co Ltd

IPC: G06F3/033

CPC classification number: G06F3/03548

Abstract: Disclosed are a key sheet for a pointing device and a pointing device using a magnet compact in terms of both magnetic force and size to allow a reduction in thickness. Between a pusher (14f) opposed to a contact input portion (E) of a board (P) and a magnet (11) fixed to a base sheet (14) at an outside position around the pusher (14f) as a center so as to be away from a key top (15), there is provided an elastic flexible portion (14d) allowing displacement in a depressing direction through depression of the key top (15) toward the contact input portion (E). As a result, it is possible to perform depressing operation on the key top (15), with the magnet (11) being provided on the base sheet (14), making it possible to perform switch input, such as confirmation input.