公开(公告)号：US20100081424A1

公开(公告)日：2010-04-01

申请号：US12417675

申请日：2009-04-03

Applicant: Jung Hoon SUH ,  Ki-Hong Park ,  Young-Chai Ko ,  Jin Hee Lee

Inventor： Jung Hoon SUH ,  Ki-Hong Park ,  Young-Chai Ko ,  Jin Hee Lee

IPC: H04W4/00 ,  H04B15/00

CPC classification number: H04W92/10 ,  H04B7/022

Abstract: A method and apparatus for controlling signal transmission is provided. The method includes determining whether a signal to noise ratio (SNR) between a first base station and a signal receiving node is less than a threshold, and controlling the first base station and a second base station to cooperatively transmit a signal to the signal receiving node in response to the SNR being less than the threshold. Further, the second base station is located in an adjacent cell to a cell containing the first base station.

Abstract translation: 提供了一种用于控制信号传输的方法和装置。 该方法包括确定第一基站和信号接收节点之间的信噪比（SNR）是否小于阈值，并且控制第一基站和第二基站以协调地将信号发送到信号接收节点 响应SNR小于阈值。 此外，第二基站位于与包含第一基站的小区相邻的小区中。

公开(公告)号：US20090169425A1

公开(公告)日：2009-07-02

申请号：US11965338

申请日：2007-12-27

Applicant: Ji Yong PARK ,  Yong Joo KIM ,  Young Bong KIM ,  Yun Sik CHOI ,  Mi Hee CHO ,  Yong Ki SEO ,  Jin Hee LEE

Inventor： Ji Yong PARK ,  Yong Joo KIM ,  Young Bong KIM ,  Yun Sik CHOI ,  Mi Hee CHO ,  Yong Ki SEO ,  Jin Hee LEE

IPC: A61L2/232 ,  A61L2/10

CPC classification number: A61L2/10

Abstract: The present invention discloses an apparatus and method for disinfecting an object in a batch, continuous, or mixed mode. The apparatus according to the present invention comprises a bath to/from which water is flowed in/drained out; and at least one ultraviolet ray (UV) lamp unit assembly mounted in the bath, each UV lamp unit assembly including a plurality of UV lamp units. Each UV lamp unit comprises a quartz tube, a UV lamp mounted in the quartz tube and a photo-catalyst layer of titanium dioxide formed on an outer surface of the quartz tube to disinfect an object in the bath by the photo-catalytic reaction of titanium dioxide and UV. The apparatus of the present invention may comprise a conveyer device comprising a driving roller, driven rollers and a conveyer belt wound around the rollers, the conveyer device is divided into an inlet portion formed at a first outside of the bath, a conveying portion formed in water in the bath and a discharging portion formed at a second outside of the bath.

Abstract translation: 本发明公开了一种以批次，连续或混合模式对物体进行消毒的装置和方法。 根据本发明的装置包括：水流入/排出的浴; 以及安装在所述槽中的至少一个紫外线（UV）灯单元组件，每个UV灯单元组件包括多个UV灯单元。 每个UV灯单元包括石英管，安装在石英管中的UV灯和形成在石英管的外表面上的二氧化钛的光催化剂层，以通过钛的光催化反应来消毒浴中的物体 二氧化物和紫外线。 本发明的装置可以包括输送装置，该输送装置包括驱动辊，从动辊和缠绕在辊周围的输送带，输送装置被分成形成在槽的第一外侧的入口部分， 在浴中的水和形成在浴的第二个外部的排出部分。

公开(公告)号：US20090127432A1

公开(公告)日：2009-05-21

申请号：US12185687

申请日：2008-08-04

Applicant: Joo-hyung LEE ,  Dong-jin Jeong ,  Man-seung Cho ,  Soon-dong Kim ,  Jin-hee Lee

Inventor： Joo-hyung LEE ,  Dong-jin Jeong ,  Man-seung Cho ,  Soon-dong Kim ,  Jin-hee Lee

IPC: G01J1/32

CPC classification number: G01J1/32 ,  G01J1/42 ,  G01J1/46 ,  G09G3/20 ,  G09G2360/144

Abstract: There are provided a light sensor, a display apparatus including the same, and a control method thereof. The display apparatus includes: a display panel which includes a display area through which an image is displayed and a non-display area. A light receiving transistor which is formed in the non-display area and receives outside light. A charging part which includes a first terminal is connected to a drain electrode of the light receiving part and a second terminal is connected to a direct current voltage terminal. A signal amplifying part which includes a first terminal and a second terminal which is connected to a source of reference voltage and receives a reference voltage. A charging switching part is connected between the first input terminal and the first terminal of the charging part. A controller is provided which controls the charging switching part according to a predetermined first cycle to charge or discharge the charging part.

Abstract translation: 提供了一种光传感器，包括该传感器的显示装置及其控制方法。 显示装置包括：显示面板，其包括显示图像的显示区域和非显示区域。 一种形成在非显示区域并接收外部光的光接收晶体管。 包括第一端子的充电部分连接到光接收部分的漏电极，第二端子连接到直流电压端子。 一种信号放大部件，包括连接到参考电压源并接收参考电压的第一端子和第二端子。 充电开关部分连接在充电部分的第一输入端子和第一端子之间。 提供控制器，其根据预定的第一周期来控制充电开关部分，以对充电部件充电或放电。

公开(公告)号：US20050003045A1

公开(公告)日：2005-01-06

申请号：US10496604

申请日：2002-12-20

Applicant: Hee-Kyong Bae ,  Yoon-Hee Whang ,  Jin-Hee Lee ,  Jae-kag Lim

Inventor： Hee-Kyong Bae ,  Yoon-Hee Whang ,  Jin-Hee Lee ,  Jae-kag Lim

IPC: A23L19/00 ,  A23B7/14 ,  A23B7/155 ,  A23B9/00 ,  A23B9/28 ,  A23L3/3571 ,  A23L7/104 ,  A23L33/00 ,  A23K1/00

CPC classification number: A23B7/155 ,  A23B9/28 ,  A23Y2220/35 ,  A23Y2240/35 ,  A23Y2300/45

Abstract: The present invention related to a manufacturing method of uncooked food and uncooked food manufactured thereby with improved taste and conservation period not by heating but using lactic ferments that can eradicate microorganism existing in grain, fruit and vegetables, and the method for preparing uncooked food that comprises the steps of pre-treating foods made of grain, fruit or vegetables by uncooked method; and incubating said pre-treated food by mixing with solution containing method activated lactic ferments at 15˜35° C. for 0.25˜8 hours and additionally further includes the step of activating lactic ferments in the solution containing sugar such as lactose; and adding sugar such as glucose or fructose into the mixture of the processed food and the solution containing the lactic ferments during the incubating step.

Abstract translation: 本发明涉及一种未烹饪食物和未煮过的食品的制造方法，其由此而不是通过加热改善味道和保存期，而是使用可消除谷物，水果和蔬菜中存在的微生物的乳酸发酵剂，以及制备未烹煮食物的方法，其包括 通过未煮过的方法预处理由谷物，水果或蔬菜制成的食品的步骤; 将所述预处理食品与15〜35℃的活化乳酸发酵溶液混合0.25〜8小时，另外进一步包括在含糖例如乳糖的溶液中活化乳酸发酵的步骤; 并在加温步骤中将糖如葡萄糖或果糖加入加工食品和含有乳酸发酵液的溶液的混合物中。

公开(公告)号：US06656075B2

公开(公告)日：2003-12-02

申请号：US10028114

申请日：2001-12-20

Applicant: Jong-Sool Park ,  Chang-Wook Lee ,  Joon-Bae Kim ,  Jae-Duk Jang ,  Tae-Kyun Kim ,  Jin-Hee Lee

Inventor： Jong-Sool Park ,  Chang-Wook Lee ,  Joon-Bae Kim ,  Jae-Duk Jang ,  Tae-Kyun Kim ,  Jin-Hee Lee

IPC: F16H6106

CPC classification number: F16H61/0206 ,  F16H61/21 ,  F16H2061/0253 ,  F16H2061/0288 ,  F16H2061/044 ,  F16H2061/1204

Abstract: Disclosed is a hydraulic control system for an automatic transmission that controls a powertrain, which includes a first friction element for use as an engine brake for discontinuing operation of a one-way clutch in the transmission and a second friction element operating only when the first friction element is disengaged. The hydraulic control system comprises a manual valve including a forward range port for exhausting hydraulic pressure when driving in a forward range, and an L range port for exhausting hydraulic pressure for low speed control; and a switch valve controlled by engine brake signal pressure, solenoid pressure, and forward range pressure supplied from the forward range port, the switch valve selectively supplying control pressure to the first friction element and the second friction element.

公开(公告)号：US06494802B2

公开(公告)日：2002-12-17

申请号：US09923388

申请日：2001-08-08

Applicant: Chang-Wook Lee ,  Jong-Sool Park ,  Jae-Ho Cho ,  Jae-Duk Jang ,  Tae-Kyun Kim ,  Jin-Hee Lee

Inventor： Chang-Wook Lee ,  Jong-Sool Park ,  Jae-Ho Cho ,  Jae-Duk Jang ,  Tae-Kyun Kim ,  Jin-Hee Lee

IPC: F16H6100

CPC classification number: F16H61/0206

Abstract: A hydraulic control system for an automatic transmission includes a first clutch acting as an input element at first, second, and third forward speed ranges, a second clutch acting as the input element at third and fourth forward speed ranges, a third clutch acting as the input element at an R range, a fourth clutch operating at P, R, N, and L range for performing an engine brake function by stopping a one-way clutch at the first, second, and third forward speed ranges, a first brake acting as a response element at the P, R, N, and L ranges, a second brake acting as a response element at second and fourth forward speed ranges, a first switch valve for distributing hydraulic pressure controlled by a first solenoid valve to a damper clutch in a torque converter and to clutch control valves for the first clutch, and a second switch valve for distributing hydraulic pressure controlled by a second solenoid valve to the second clutch and the first brake.

公开(公告)号：US06440028B2

公开(公告)日：2002-08-27

申请号：US09750312

申请日：2000-12-29

Applicant: Tae-Kyun Kim ,  Jae-Duk Jang ,  Jong-Sool Park ,  Hyun-Soo Shim ,  Jin-Hee Lee ,  Chang-Wook Lee

Inventor： Tae-Kyun Kim ,  Jae-Duk Jang ,  Jong-Sool Park ,  Hyun-Soo Shim ,  Jin-Hee Lee ,  Chang-Wook Lee

IPC: F16H3100

CPC classification number: F15B13/0402 ,  F16H61/0206 ,  F16H61/0286

Abstract: A manual valve body is provided with a first port communicated with a regulator valve via a pressure line, a second port connected to a first pressure control valve and a second fail safe valve so as to supply hydraulic pressure thereto at range “P”, a third port connected to the regulator valve, an N-R control valve, and first and second switch valves so as to supply the hydraulic pressure from the first port thereto at range “R”, a fourth port connected to second and third pressure control valves and the first and second switch valves so as to supply the hydraulic pressure from the first valve thereto at ranges “2”, “3”, and “D”, and a fifth port connected to the first switch valve so as to supply the hydraulic pressure from the first port thereto at range “L”.

Abstract translation: 手动阀体设置有经由压力管线与调节阀连通的第一端口，连接到第一压力控制阀的第二端口和第二故障安全阀，以便在范围“P”提供液压压力 连接到调节阀的第三端口，NR控制阀以及第一和第二开关阀，以便将第一端口的液压供应到范围“R”，连接到第二和第三压力控制阀的第四端口和 第一和第二开关阀，以便将第一阀的液压供应到范围“2”，“3”和“D”，第五端口连接到第一开关阀，以便从 其第一端口处于范围“L”。

公开(公告)号：US06204102B1

公开(公告)日：2001-03-20

申请号：US09207512

申请日：1998-12-09

Applicant: Hyung Sup Yoon ,  Jin Hee Lee ,  Byung Sun Park ,  Chul Soon Park ,  Kwang Eui Pyun

Inventor： Hyung Sup Yoon ,  Jin Hee Lee ,  Byung Sun Park ,  Chul Soon Park ,  Kwang Eui Pyun

IPC: H01L21338

CPC classification number: B82Y10/00 ,  H01L21/28587 ,  H01L29/66469 ,  H01L29/66878

Abstract: A method of forming a gate electrode of a compound semiconductor device includes forming a first insulating film pattern having a first aperture, forming a second insulating film pattern having a second aperture consisting of inverse V-type on the first insulating film pattern, forming a T-type gate electrode by depositing a conductivity film on the entire structure, removing a second insulating film pattern, forming a insulating spacer on a pole sidewall by etching a first insulating film pattern, and forming an ohmic electrode of the source and drain by self-aligning method using T-type gate electrode as a mask. Thereby T-type gate electrode of materials such as refractory metals can be prevented to be deteriorate because of high annealing, as well as it is stably formed, by using an insulating film. Ohmic metal and gate electrodes formed by self-aligning method can be prevented an interconnection by forming an insulating film spacer between these electrodes.

Abstract translation: 一种形成化合物半导体器件的栅电极的方法包括：形成具有第一孔的第一绝缘膜图案，在第一绝缘膜图案上形成具有由反V型构成的第二孔的第二绝缘膜图案，形成T 通过在整个结构上沉积导电膜，去除第二绝缘膜图案，通过蚀刻第一绝缘膜图案在极侧壁上形成绝缘隔离物，并通过自发形成源极和漏极的欧姆电极， 使用T型栅电极作为掩模的对准方法。 因此，通过使用绝缘膜，可以防止诸如难熔金属的材料的T型栅极电极由于高退火而被稳定地形成。 通过自对准方法形成的欧姆金属和栅电极可以通过在这些电极之间形成绝缘膜间隔来防止互连。

公开(公告)号：US5970328A

公开(公告)日：1999-10-19

申请号：US961407

申请日：1997-10-30

Applicant: Byung-Sun Park ,  Jin-Hee Lee ,  Hyung-Sup Yoon ,  Chul-Sun Park ,  Kwang-Eui Pyun

Inventor： Byung-Sun Park ,  Jin-Hee Lee ,  Hyung-Sup Yoon ,  Chul-Sun Park ,  Kwang-Eui Pyun

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/335 ,  H01L29/423 ,  H01L21/338

CPC classification number: H01L29/66462 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/42316

Abstract: A method for fabricating a T-shaped gate electrode of a high speed semiconductor device such as HEMTs which is applied to high speed logic circuit including low-noise receivers and power amplifiers having a frequency of X-band or more respectively, and MMICs having a frequency of millimeter wave band. Such devices require a short gate length and a large sectional area of the gate pattern. The conventional photolithography techniques are in need of the resolution for fabricating a fine line width. Therefore, electron-beam lithography is most widely used. But, it is difficult to enhance throughput in manufacturing semiconductor devices because a lot of exposure time is required in the methods using electron beams. In the present invention, a silicon oxide film or a silicon nitride film is deposited on a mono-layered resist pattern. A dummy pattern corresponding to a leg of the gate is formed using the silicon oxide film or the silicon nitride film. A leg of the gate electrode is formed at the portion of the dummy pattern. According to the present invention, a step for improving the resolution is not required, and a gate electrode having a very fine line width of a few hundreds .ANG. can be obtained by regulating the thickness of the silicon nitride film.

Abstract translation: 一种用于制造诸如HEMT的高速半导体器件的T形栅极的方法，其应用于包括具有X频带或更多频率的低噪声接收机和功率放大器的高速逻辑电路，以及具有 毫米波段的频率。 这样的器件需要栅极长度短和栅极图案的大截面积。 常规的光刻技术需要用于制造细线宽度的分辨率。 因此，电子束光刻被广泛使用。 但是，由于在使用电子束的方法中需要大量的曝光时间，所以难以提高制造半导体器件的吞吐量。 在本发明中，在单层抗蚀剂图案上沉积氧化硅膜或氮化硅膜。 使用氧化硅膜或氮化硅膜形成对应于栅极支脚的虚拟图案。 栅电极的一条腿形成在虚拟图案的部分。 根据本发明，不需要提高分辨率的步骤，并且可以通过调节氮化硅膜的厚度来获得具有几百安培的极细线宽的栅电极。

公开(公告)号：US5885847A

公开(公告)日：1999-03-23

申请号：US835957

申请日：1997-04-11

Applicant: Hyung-Sup Yoon ,  Jin-Hee Lee ,  Byung-Sun Park ,  Chul-Sun Park ,  Kwang-Eui Pyun

Inventor： Hyung-Sup Yoon ,  Jin-Hee Lee ,  Byung-Sun Park ,  Chul-Sun Park ,  Kwang-Eui Pyun

IPC: H01L29/778 ,  H01L21/20 ,  H01L21/205 ,  H01L27/144 ,  H01L21/00 ,  H01L21/338

CPC classification number: H01L27/1443

Abstract: The invention relates to a method of fabricating a compound semiconductor device by forming a first and a second compound semiconductor devices having a plurality of different epitaxial layers on a common semiconductor substrate. The method comprises the steps of sequentially forming a plurality of first epitaxial layers for manufacturing the first compound semiconductor device on the semiconductor substrate; forming a first insulating film pattern for defining an active region of the first compound semiconductor device; etching the plurality of first epitaxial layers using the first insulating film pattern as a mask; forming a second insulating film on the resultant structure; forming a sidewall insulating spacer on the sidewall of the active region of the first compound semiconductor device by dry etching the second insulating film; sequentially forming a plurality of second epitaxial layers for manufacturing the second compound semiconductor device on the portion from which the plurality of first epitaxial layers is etched back; forming each electrode of the first and second compound semiconductor devices; and forming an interconnection electrode interconnecting each electrode of the first and second compound semiconductor devices.

Abstract translation: 本发明涉及通过在公共半导体衬底上形成具有多个不同外延层的第一和第二化合物半导体器件来制造化合物半导体器件的方法。 该方法包括以下步骤：在半导体衬底上依次形成用于制造第一化合物半导体器件的多个第一外延层; 形成用于限定所述第一化合物半导体器件的有源区的第一绝缘膜图案; 使用第一绝缘膜图案作为掩模蚀刻多个第一外延层; 在所得结构上形成第二绝缘膜; 通过干蚀刻所述第二绝缘膜，在所述第一化合物半导体器件的有源区的侧壁上形成侧壁绝缘间隔物; 在多个第一外延层被回蚀的部分上依次形成用于制造第二化合物半导体器件的多个第二外延层; 形成第一和第二化合物半导体器件的每个电极; 以及形成互连所述第一和第二化合物半导体器件的每个电极的互连电极。