APPARATUS FOR SUBSTANTIALLY UNIFORM FLUID FLOW RATES RELATIVE TO A PROXIMITY HEAD IN PROCESSING OF A WAFER SURFACE BY A MENISCUS
    131.
    发明申请
    APPARATUS FOR SUBSTANTIALLY UNIFORM FLUID FLOW RATES RELATIVE TO A PROXIMITY HEAD IN PROCESSING OF A WAFER SURFACE BY A MENISCUS 审中-公开
    装置用于通过曼尼斯卡处理WAFER表面的临时头部的大体均匀流体流量

    公开(公告)号:WO2009100409A3

    公开(公告)日:2009-12-03

    申请号:PCT/US2009033499

    申请日:2009-02-07

    CPC classification number: H01L21/67051 Y10S134/902 Y10T29/49826

    Abstract: Conditioning fluid flow into a proximity head is provided for fluid delivery to a wafer surface. An upper plenum connected to a plurality of down flow bores is supplied by a main bore. The down flow bores provide fluid into the upper plenum, and a resistor bore is connected to the upper plenum. The resistor bore receives a resistor having a shape so as to limit flow of the fluid through the resistor bore. A lower plenum connected to the resistor bore is configured to receive fluid from the resistor bore as limited by the resistor for flow to a plurality of outlet ports extending between the lower plenum and surfaces of the head surface. Fluid flowing through the upper plenum, the resistor bore with the resistor and the lower plenum is substantially conditioned to define a substantially uniform fluid outflow from the plurality of outlet ports, across the width of the proximity head.

    Abstract translation: 提供流体流入邻近头部的调节流体输送到晶片表面。 连接到多个向下流动孔的上部气室由主孔提供。 向下流动孔将流体提供到上部通风室中,并且电阻器孔连接到上部增压室。 电阻器孔接收具有形状以阻止流体流过电阻器孔的电阻器。 连接到电阻器孔的下部增压室被配置为从电阻器孔接收流体,由电阻器限制,以流向在下部增压室和头部表面的表面之间延伸的多个出口端口。 流过上部通风室的流体,具有电阻器和下部增压室的电阻器孔基本上被调节以限定跨过接近头部宽度的多个出口端口的基本均匀的流体流出。

    APPARATUS FOR SUBSTANTIALLY UNIFORM FLUID FLOW RATES RELATIVE TO A PROXIMITY HEAD IN PROCESSING OF A WAFER SURFACE BY A MENISCUS
    132.
    发明申请
    APPARATUS FOR SUBSTANTIALLY UNIFORM FLUID FLOW RATES RELATIVE TO A PROXIMITY HEAD IN PROCESSING OF A WAFER SURFACE BY A MENISCUS 审中-公开
    用于在由半月板处理晶片表面时对于近接头而言大体上一致的流体流速的装置

    公开(公告)号:WO2009100409A2

    公开(公告)日:2009-08-13

    申请号:PCT/US2009/033499

    申请日:2009-02-07

    CPC classification number: H01L21/67051 Y10S134/902 Y10T29/49826

    Abstract: Conditioning fluid flow into a proximity head is provided for fluid delivery to a wafer surface. An upper plenum connected to a plurality of down flow bores is supplied by a main bore. The down flow bores provide fluid into the upper plenum, and a resistor bore is connected to the upper plenum. The resistor bore receives a resistor having a shape so as to limit flow of the fluid through the resistor bore. A lower plenum connected to the resistor bore is configured to receive fluid from the resistor bore as limited by the resistor for flow to a plurality of outlet ports extending between the lower plenum and surfaces of the head surface. Fluid flowing through the upper plenum, the resistor bore with the resistor and the lower plenum is substantially conditioned to define a substantially uniform fluid outflow from the plurality of outlet ports, across the width of the proximity head.

    Abstract translation: 调节流体流入邻近头以提供流体输送至晶片表面。 连接到多个下流孔的上部充气室由主孔供应。 下流孔提供流体进入上部充气室,电阻器孔连接到上部充气室。 电阻器孔接收具有形状的电阻器以限制流体通过电阻器孔的流动。 连接到电阻器孔的下部充气室被配置为接收来自电阻器孔的流体,如由电阻器限制的,用于流动到在下部充气室与头部表面的表面之间延伸的多个出口端口。 流过上部充气室的流体,具有电阻器和下部充气室的电阻器孔基本上被调节成限定从多个出口端口跨越邻近头部的宽度大体均匀的流体流出。

    ETCHANT COMPOSITIONS AND ETCHING METHOD FOR METALS Cu/Mo
    133.
    发明申请
    ETCHANT COMPOSITIONS AND ETCHING METHOD FOR METALS Cu/Mo 审中-公开
    金属Cu / Mo的蚀刻组合物和蚀刻方法

    公开(公告)号:WO2009047203A1

    公开(公告)日:2009-04-16

    申请号:PCT/EP2008/063221

    申请日:2008-10-02

    CPC classification number: C09K13/08 C23F1/18 C23F1/26 H01L21/32134

    Abstract: The present invention provides an etchant composition suitable for etching metals Cu/Mo, wherein the composition comprises 1 to 25 wt% of hydrogen peroxide on the basis of the total weight of the composition; 0.1 to 15 wt% of amino acid on the basis of the total weight of the composition; 0.1 to 15 wt% of a pH stabilizer on the basis of the total weight of the composition; 0.01 to 2 wt% of fluorine-containing acid on the basis of the total weight of the composition; 0.01 to 3 wt% of an acidic pH adjuster on the basis of the total weight of the composition; and an aqueous medium. The present invention also provides a process for etching metals Cu/Mo with the etchant composition of the present invention.

    Abstract translation: 本发明提供了适用于蚀刻金属Cu / Mo的蚀刻剂组合物,其中组合物基于组合物的总重量包含1至25重量%的过氧化氢; 基于组合物的总重量为0.1至15重量%的氨基酸; 0.1〜15重量%的pH稳定剂,基于组合物的总重量; 0.01〜2重量%的含氟酸,基于组合物的总重量; 0.01〜3重量%的酸性pH调节剂,基于组合物的总重量; 和水介质。 本发明还提供了用本发明的蚀刻剂组合物蚀刻金属Cu / Mo的方法。

    WERKZEUG ZUR MONTAGE EINES ELASTISCHEN RIEMENS AUF EINEN STARREN RIEMENTRIEB
    134.
    发明申请
    WERKZEUG ZUR MONTAGE EINES ELASTISCHEN RIEMENS AUF EINEN STARREN RIEMENTRIEB 审中-公开
    工具用于安装柔性带以刚性带DRIVE

    公开(公告)号:WO2005024272A1

    公开(公告)日:2005-03-17

    申请号:PCT/EP2004/051856

    申请日:2004-08-20

    CPC classification number: F16H7/24

    Abstract: Die Erfindung betrifft ein Werkzeug zur Montage eines elastischen Riemens auf die Riemenscheiben eines starren Riementriebes, das eine radiale Riemenführung aufweist, die den Riemen bei Drehung der Riemenscheiben über den Rand einer der Riemenscheiben von der Vorderseite der Riemenscheibe in die Nut oder die Nuten der Riemenscheibe führt und während der Montage am Aussenrand der Riemenscheibe befestigt ist, wobei das Montagewerkzeug drehfest so am Rand einer der Riemenscheiben eines Riementriebes festgeklemmt ist, dass es dabei einen Abschnitt des in einer Nut oder in Nuten der Riemenscheibe liegenden Riemens drehfest auf der Riemenscheibe mit fixiert, das Montagewerkzeug mit dem im Montagewerkzeug fixierten Abschnitt des Riemens bei Drehung der Riemenscheibe mitgedreht werden und dabei den freien, nicht fixierten Teil des Riemens in die Nut oder die Nuten der Riemenscheibe ziehen.

    Abstract translation: 本发明涉及一种工具,用于安装在具有径向带引导,其在从在槽带轮的前侧的滑轮或滑轮的凹槽中的一个的边缘在所述滑轮的旋转引导所述带的刚性带驱动器的滑轮的弹性带的 并在皮带轮的外部的组装过程中被安装,其特征在于,在所述安装工具上的旋转地固定,从而在其从而可旋转地在一个凹槽或传动带的槽平躺的一部分被夹紧的带驱动器的皮带轮中的一个的边缘,固定在滑轮,所述 装配工具与在带的工具部分在所述带轮的旋转而固定的安装同时拉动带的自由的,非固定部分到凹槽或滑轮的槽旋转。

    MULTI-STAGE SUBSTRATE CLEANING METHOD AND APPARATUS
    136.
    发明申请
    MULTI-STAGE SUBSTRATE CLEANING METHOD AND APPARATUS 审中-公开
    多级基板清洗方法和装置

    公开(公告)号:WO2010132371A2

    公开(公告)日:2010-11-18

    申请号:PCT/US2010/034264

    申请日:2010-05-10

    CPC classification number: B08B3/041 H01L21/02057 H01L21/67051

    Abstract: A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

    Abstract translation: 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。 冲洗流体的第一次施加是在基材的表面上,以从基材的表面上冲洗清洁材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面,以便从基材的表面漂洗清洁材料。

    METHODS OF CONFIGURING A PROXIMITY HEAD THAT PROVIDES UNIFORM FLUID FLOW RELATIVE TO A WAFER
    137.
    发明申请
    METHODS OF CONFIGURING A PROXIMITY HEAD THAT PROVIDES UNIFORM FLUID FLOW RELATIVE TO A WAFER 审中-公开
    设置相对于晶片提供均匀流体流动的近接头的方法

    公开(公告)号:WO2009085250A2

    公开(公告)日:2009-07-09

    申请号:PCT/US2008/013985

    申请日:2008-12-19

    CPC classification number: H01L21/67051 H01L21/67057

    Abstract: Methods configure a proximity head for conditioning fluid flow relative to a proximity head in processing of a surface of a wafer by a meniscus. The methods configure the head in one piece while maintaining head rigidity even as the head is lengthened for cleaning of large diameter wafers. The one-piece head configuring separates main fluid flows from separate flows of fluid relative to the wafer surface, with the separation being by a high resistance fluid flow configuration, resulting in substantially uniform fluid flows across increased lengths of the head in a unit for either fluid supply or return.

    Abstract translation: 方法在通过弯月面处理晶片的表面时配置用于调节相对于邻近头的流体流动的接近头。 这种方法在保持磁头刚性的情况下将磁头配置为一个整体,即使为了清洁大直径晶圆而加长磁头也是如此。 单件式头部构造将主流体流从相对于晶片表面的单独流体流分离,其中所述分离由高阻力流体流动构造分离,导致在单元中增加的头部长度上的基本均匀的流体流动,用于 流体供应或返回。

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