公开(公告)号：US20210116640A1

公开(公告)日：2021-04-22

申请号：US16985860

申请日：2020-08-05

Applicant: Skorpios Technologies, Inc.

Inventor： Guoliang Li ,  Damien Lambert ,  Nikhil Kumar

IPC: G02B6/14 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge. In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages having different widths at a given cross section.

公开(公告)号：US10862270B2

公开(公告)日：2020-12-08

申请号：US16374293

申请日：2019-04-03

Applicant: Skorpios Technologies, Inc.

Inventor： Hacene Chaouch ,  Guoliang Li

IPC: H01S3/08 ,  H01S5/12 ,  G02B6/125 ,  H01S5/02 ,  H01S5/0683 ,  H01S5/14 ,  H01S3/03 ,  H01S3/063 ,  H01S3/067 ,  H01S3/10 ,  H01S3/1055 ,  H01S5/06 ,  H01S5/30 ,  G02B6/122 ,  G02B6/12 ,  H01S5/10

Abstract: A tunable laser has a first mirror, a second mirror, a gain medium, and a directional coupler. The first mirror and the second mirror form an optical resonator. The gain medium and the directional coupler are, at least partially, in an optical path of the optical resonator. The first mirror and the second mirror comprise binary super gratings. Both the first mirror and the second mirror have high reflectivity. The directional coupler provides an output coupler for the tunable laser.

公开(公告)号：US20200371383A1

公开(公告)日：2020-11-26

申请号：US16843761

申请日：2020-04-08

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  Damien Lambert ,  Andrew Bonthron ,  Guoliang Li

IPC: G02F1/017 ,  G02F1/01 ,  H03H7/38

Abstract: A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

公开(公告)号：US10732029B2

公开(公告)日：2020-08-04

申请号：US16178840

申请日：2018-11-02

Applicant: Skorpios Technologies, Inc.

Inventor： Robert J. Stone ,  Stephen B. Krasulick

IPC: G01J1/08 ,  G01R31/3187 ,  H04B10/073 ,  H04B10/035 ,  H04B10/077 ,  H04B17/00 ,  G01J1/42

Abstract: A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide.

公开(公告)号：US10649148B2

公开(公告)日：2020-05-12

申请号：US16171132

申请日：2018-10-25

Applicant: Skorpios Technologies, Inc.

Inventor： Majid Sodagar ,  Stephen B. Krasulick ,  John Zyskind ,  Paveen Apiratikul ,  Luca Cafiero

IPC: G02B6/30 ,  G02B6/12

Abstract: A device is provided for optical mode spot size conversion to optically couple a semiconductor waveguide with an optical fiber. The device includes a waveguide comprising a waveguide taper region, which comprises a shoulder portion and a ridge portion above the shoulder portion. The ridge portion has a width that tapers to meet a width of the shoulder portion. The waveguide taper region comprises a first material. The device also has a mode converter coupled to the waveguide. The mode converter includes a plurality of stages, and each of the plurality of stages tapers in a direction similar to a direction of taper of the waveguide taper region. The mode converter is made of a second material different from the first material.

公开(公告)号：US20200083662A1

公开(公告)日：2020-03-12

申请号：US16389089

申请日：2019-04-19

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: H01S5/022 ,  G02B6/136 ,  G02B6/122 ,  H01L23/00 ,  G02B6/42

Abstract: A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

公开(公告)号：US20190391334A1

公开(公告)日：2019-12-26

申请号：US16239811

申请日：2019-01-04

Applicant: Skorpios Technologies, Inc.

Inventor： John Dallesasse ,  Stephen B. Krasulick

IPC: G02B6/27 ,  G02B6/26 ,  G02B5/30 ,  G02B6/126 ,  G02B6/10 ,  G02F1/00 ,  G02F1/09

Abstract: Photonic rotators integrated on a substrate are disclosed for manipulating light polarization.

公开(公告)号：US10373939B2

公开(公告)日：2019-08-06

申请号：US15633343

申请日：2017-06-26

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  John Dallesasse

IPC: H01L31/0232 ,  H01L25/16 ,  G02B6/12 ,  G02B6/122 ,  G02B6/136 ,  H01L25/075 ,  H01S5/10 ,  H01S5/022 ,  H01L25/00 ,  H01L33/00 ,  H01L33/44 ,  H01L33/48 ,  H01L33/62 ,  H01S5/02

Abstract: A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

公开(公告)号：US10319693B2

公开(公告)日：2019-06-11

申请号：US14741181

申请日：2015-06-16

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: H01L23/00 ,  G02B6/42 ,  G02B6/36 ,  H01L21/20 ,  H01L23/31 ,  H01L21/18 ,  H01L25/065 ,  H01L25/00

Abstract: Micro pillars are formed in silicon. The micro pillars are used in boding the silicon to hetero-material such as III-V material, ceramics, or metals. In bonding the silicon to the hetero-material, indium is used as a bonding material and attached to the hetero-material. The bonding material is heated and the silicon and the hetero-material are pressed together. As the silicon and the hetero-material are pressed together, the micro pillars puncture the bonding material. In some embodiments, pedestals are used in the silicon as hard stops to align the hetero-material with the silicon.

公开(公告)号：US10312661B2

公开(公告)日：2019-06-04

申请号：US15592704

申请日：2017-05-11

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: H01S5/022 ,  G02B6/42 ,  H01L23/00 ,  G02B6/136 ,  G02B6/122 ,  G02B6/12 ,  H01S5/02

Abstract: A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.