Displays with supplemental loading structures

    公开(公告)号:US10360862B2

    公开(公告)日:2019-07-23

    申请号:US15980437

    申请日:2018-05-15

    Applicant: Apple Inc.

    Abstract: A display may have an array of pixels such as liquid crystal display pixels. The display may include short pixel rows that span only partially across the display and full-width pixel rows that span the width of the display. The gate lines coupled to the short pixel rows may extend into the inactive area of the display. Supplemental gate line loading structures may be located in the inactive area of the display to increase loading on the gate lines that are coupled to short pixel rows. The supplemental gate line loading structures may include data lines and doped polysilicon that overlap the gate lines in the inactive area. In displays that combine display and touch functionality into a thin-film transistor layer, supplemental loading structures may be used in the inactive area to increase loading on common voltage lines that are coupled to short rows of common voltage pads.

    High Frame Rate Display
    134.
    发明申请

    公开(公告)号:US20190088207A1

    公开(公告)日:2019-03-21

    申请号:US16134802

    申请日:2018-09-18

    Applicant: Apple Inc.

    Abstract: A display may have rows and columns of pixels. Gate lines may be used to supply gate signals to rows of the pixels. Data lines may be used to supply data signals to columns of the pixels. The data lines may include alternating even and odd data lines. Data lines may be organized in pairs each of which includes one of the odd data lines and an adjacent one of the even data lines. Demultiplexer circuitry may be configured dynamically during data loading and pixel sensing operations. During data loading, data from display driver circuitry may be supplied, alternately to odd pairs of the data lines and even pairs of the data lines. During sensing, the demultiplexer circuitry may couple a pair of the even data lines to sensing circuitry in the display driver circuitry and then may couple a pair of the odd data lines to the sensing circuitry.

    Light-emitting diode displays
    136.
    发明授权

    公开(公告)号:US10192938B2

    公开(公告)日:2019-01-29

    申请号:US15919057

    申请日:2018-03-12

    Applicant: Apple Inc.

    Abstract: A display may have an array of pixels. Display driver circuitry may supply data and control signals to the pixels. Each pixel may have seven transistors, a capacitor, and a light-emitting diode such as an organic light-emitting diode. The seven transistors may receive control signals using horizontal control lines. Each pixel may have first and second emission enable transistors that are coupled in series with a drive transistor and the light-emitting diode of that pixel. The first and second emission enable transistors may be coupled to a common control line or may be separately controlled so that on-bias stress can be effectively applied to the drive transistor. The display driver circuitry may have gate driver circuits that provide different gate line signals to different rows of pixels within the display. Different rows may also have different gate driver strengths and different supplemental gate line loading structures.

    DIFFERENT LIGHTLY DOPED DRAIN LENGTH CONTROL FOR SELF-ALIGN LIGHT DRAIN DOPING PROCESS
    140.
    发明申请
    DIFFERENT LIGHTLY DOPED DRAIN LENGTH CONTROL FOR SELF-ALIGN LIGHT DRAIN DOPING PROCESS 有权
    用于自对准排水过程的不同的轻型排水长度控制

    公开(公告)号:US20160380112A9

    公开(公告)日:2016-12-29

    申请号:US13801261

    申请日:2013-03-13

    Applicant: APPLE INC.

    Abstract: A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack. The TFT stack includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes removing the first photoresist layer, and depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area. The method further includes doping the second portion of the doped semiconductor layer with a third doping dose, the first dose being higher than the second dose and the third dose.

    Abstract translation: 提供了一种制造用于具有像素阵列的LCD的薄膜晶体管(TFT)的方法。 该方法包括在TFT堆叠的一部分上沉积第一光致抗蚀剂层。 TFT堆叠包括导电栅极层和半导体层。 该方法还包括以第一掺杂剂量掺杂暴露的半导体层。 该方法还包括蚀刻导电栅极层的一部分以暴露半导体层的一部分,并以第二掺杂剂量掺杂半导体层的暴露部分。 该方法还包括去除第一光致抗蚀剂层,以及在像素的有源区域中在掺杂半导体层的第一部分上沉积第二光致抗蚀剂层,以在围绕有源区域的区域中暴露掺杂半导体层的第二部分。 该方法还包括以第三掺杂剂量掺杂掺杂半导体层的第二部分,第一剂量高于第二剂量和第三剂量。

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