公开(公告)号：EP2212931A1

公开(公告)日：2010-08-04

申请号：EP08854645.2

申请日：2008-11-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SABATHIL, Matthias ,  PETER, Matthias

IPC: H01L33/00 ,  H01S5/343 ,  H01S5/323

CPC classification number: H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

Abstract: An LED is provided, which has a radiation-emitting active layer (7), an n-contact (10), a p-contact (9), and a current spreading layer (4). The current spreading layer (4) is disposed between the active layer (7) and the n-contact (10). The current spreading layer (4) further comprises a multifold recurring layer sequence, which comprises at least one n-doped layer (44), an undoped layer (42), and a layer made of AlxGa1-xN (43), where 0

公开(公告)号：EP2191520A1

公开(公告)日：2010-06-02

申请号：EP08801300.8

申请日：2008-09-04

Applicant: Osram Opto Semiconductors Gmbh

Inventor： HAHN, Berthold ,  WEIMAR, Andreas ,  BAUR, Johannes ,  SABATHIL, Matthias ,  PLAINE, Glenn-Ives

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/10 ,  H01L33/145 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a thin-film LED, which comprises a barrier layer (3), a first mirror layer (2) following the barrier layer (3), a layer stack (5) following the first mirror layer (2), and at least one contact structure (6) following the layer stack (5). The layer stack (5) comprises at least one active layer (5a), which emits the electromagnetic radiation. The contact structure (6) is disposed on a radiation emergence surface (4) and comprises a contact surface (7). The first mirror layer (2) has a recess in a region opposite the contact surface of the contact structure (6), said recess being larger than the contact surface (7) of the contact structure (6). As a result, the efficiency of the thin-film LED increases.

Abstract translation: 一种薄膜LED，其包括阻挡层（3），第一反射镜层（2）后续的阻挡层（3），层堆（5）后面的第一反光镜层（2），以及至少一个接触结构（ 6）随后的层堆（5）。 层堆叠（5）具有至少一个有源层（5a）中，其发射电磁辐射。 接触结构（6）被布置在辐射出射面（4）和具有接触区域（7）。 所述第一反光镜层（2）具有在位于所述接触结构的接触区域相对的区域（6），切口的所有比的接触面积较大的（7）的接触结构（6）。 薄膜LED的效率增加作为结果。

公开(公告)号：EP2165374A2

公开(公告)日：2010-03-24

申请号：EP08773274.9

申请日：2008-06-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： STRASSBURG, Martin ,  HÖPPEL, Lutz ,  SABATHIL, Matthias ,  PETER, Matthias ,  STRAUSS, Uwe

IPC: H01L33/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/40

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/3095 ,  H01S5/34333

Abstract: A radiation-emitting semiconductor body having a contact layer (3) and an active zone (7) is specified, wherein the semiconductor body has a tunnel junction (4) which is arranged between the contact layer and the active zone, and the active zone has a multiple quantum well structure containing at least two active layers (71) which emit electromagnetic radiation into the semiconductor body when an operating current is impressed.

公开(公告)号：EP2130235A2

公开(公告)日：2009-12-09

申请号：EP08700869.4

申请日：2008-01-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SABATHIL, Matthias ,  HÖPPEL, Lutz ,  EICHLER, Christoph ,  ENGL, Karl ,  PETER, Matthias ,  STRASSBURG, Martin

IPC: H01L33/00

CPC classification number: H01L33/382 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a light-emitting diode chip comprising a series of layers (10) provided with at least one n-type conductivity layer. Said light-emitting diode chip comprises a reflective layer (5) that is connected in a conductive manner to the n-type conductivity layer (31). At least one transparent dielectric layer (4) is arranged between the n-type conductivity layer and the reflective layer.

公开(公告)号：EP1911103A1

公开(公告)日：2008-04-16

申请号：EP06775767.4

申请日：2006-07-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： AVRAMESCU, Adrian ,  HÄRLE, Volker ,  HÖPPEL, Lutz ,  PETER, Matthias ,  SABATHIL, Matthias ,  STRAUSS, Uwe

IPC: H01L33/00 ,  H01S5/343 ,  H01S5/34

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3202 ,  H01S5/3407 ,  H01L2924/00

Abstract: The application relates to an optoelectronic semiconductor chip (20) comprising the following sequence of regions in a growth direction (σ) of the semiconductor chip (20): - a p-doped barrier layer (1), for an active region (2), - the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and - an n-doped barrier layer (3) for the active region (2). The application furthermore relates to a component comprising such a semiconductor chip (20) and to a method for producing such a semiconductor chip (20).

Abstract translation: 本申请涉及一种光电子半导体芯片（20），包括在半导体芯片（20）的生长方向（σ）上的以下顺序的区域： - 用于有源区域（2）的p掺杂阻挡层（1） ， - 适于产生电磁辐射的有源区（2），有源区基于六方晶系化合物半导体，以及 - 用于有源区（2）的n掺杂阻挡层（3）。 本申请还涉及包括这种半导体芯片（20）的组件以及用于制造这种半导体芯片（20）的方法。