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    BELEUCHTUNGSVORRICHTUNG
    134.
    发明公开
    BELEUCHTUNGSVORRICHTUNG 有权

    公开(公告)号：EP2529399A1

    公开(公告)日：2012-12-05

    申请号：EP11700426.7

    申请日：2011-01-17

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： SABATHIL, Matthias ,  VON MALM, Norwin ,  HOEPPEL, Lutz ,  ILLEK, Stefan ,  BARCHMANN, Bernd ,  RODE, Patrick

    IPC: H01L25/075 ,  F21K99/00

    CPC classification number: H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

    Abstract translation: 具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体的选定位置被覆盖，发光二极管芯片被布置 在后部载体和前部载体之间形成阵列，发光二极管通过后部和/或前部载体电接触并且由后部载体和前部载体机械固定，前部载体与导热地耦合到发光二极管芯片并且包括光输出耦合 远离发光二极管芯片，该光耦合面将由发光二极管芯片释放的一些废热释放到周围环境中，当照明设备是光源时，每个发光二极管芯片以100mW或更小的电标称功率被致动 并且具有100lm / W或更高的光产量。

    STRAHLUNGSEMITTIERENDER HALBLEITERCHIP
    136.
    发明公开
    STRAHLUNGSEMITTIERENDER HALBLEITERCHIP 有权

    公开(公告)号：EP2351079A1

    公开(公告)日：2011-08-03

    申请号：EP09767932.8

    申请日：2009-10-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： MOOSBURGER, Jürgen ,  VON MALM, Norwin ,  RODE, Patrick ,  HÖPPEL, Lutz ,  ENGL, Karl

    IPC: H01L25/16 ,  H01L27/15 ,  H01L33/38 ,  H01L33/08

    CPC classification number: H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: The invention relates to a radiation-emitting semiconductor chip (1), which has a carrier (5) and a semiconductor body (2) having a semiconductor layer sequence. An emission region (23) and a protective diode region (24) are produced in the semiconductor chip (2) having the semiconductor layer sequence. The semiconductor layer sequence has an active region (20) provided for generating radiation, which is disposed between a first semiconductor layer (21) and a second semiconductor layer (22). The first semiconductor layer (21) is arranged on the side of the active region (20) that faces away from the carrier (5). The emission region (23) has a recess (25), which extends through the active region. In the emission region (23), the first semiconductor layer (21) is connected to a first connecting layer (31) in an electrically conductive manner, wherein the first connecting layer extends in the recess (25) from the first semiconductor layer (21) in the direction of the carrier (5). In the protective diode region (24), the first connecting layer is connected to the second semiconductor layer (22) in an electrically conductive manner. Furthermore, a method for producing a radiation-emitting semiconductor chip is provided.

    Abstract translation: 本发明涉及一种发射辐射的半导体芯片（1），其具有载体（5）和具有半导体层序列的半导体本体（2）。 在具有半导体层序列的半导体芯片（2）中产生发射区域（23）和保护二极管区域（24）。 半导体层序列具有设置用于产生辐射的有源区（20），其设置在第一半导体层（21）和第二半导体层（22）之间。 第一半导体层（21）布置在背离载体（5）的有源区（20）的一侧上。 发射区域（23）具有延伸穿过有源区域的凹部（25）。 在发光区域（23）中，第一半导体层（21）以导电的方式连接到第一连接层（31），其中第一连接层从第一半导体层（21） ）在载体（5）的方向上。 在保护二极管区域（24）中，第一连接层以导电的方式连接到第二半导体层（22）。 此外，提供了一种用于制造发射辐射的半导体芯片的方法。

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