公开(公告)号：US20130021989A1

公开(公告)日：2013-01-24

申请号：US13520772

申请日：2010-01-07

Applicant: Esa Tapani Tiirola ,  Timo Erkki Lunttila ,  Kari Pekka Pajukoski ,  Kari Juhani Hooli ,  Peng Chen ,  Tommi Tapani Koivisto

Inventor： Esa Tapani Tiirola ,  Timo Erkki Lunttila ,  Kari Pekka Pajukoski ,  Kari Juhani Hooli ,  Peng Chen ,  Tommi Tapani Koivisto

IPC: H04W72/04

CPC classification number: H04L5/0053

Abstract: Methods, apparatuses and related computer program product for control information signaling. It is disclosed a method/apparatus comprising predetermining, specifically for each of a plurality of terminals, a transmission mode in correspondence with a predetermined second control information format, transmitting, in a first predetermined portion of a set of control channel candidates, a first control information format of a first size, defining, based on the second control information format, a scheduling grant format of a second size different from the first size to be applied on a second predetermined portion of the set of control channel candidates, equating the first size so as to match with the second size, and transmitting, in the second predetermined portion, the equated first control information; and a method/apparatus comprising monitoring, in the first and second predetermined portions, reception of the first control information format, upon reception of a configuration message relating to the transmission mode, continuing the monitoring and monitoring reception of the scheduling grant format.

Abstract translation: 用于控制信息信令的方法，装置和相关计算机程序产品。 公开了一种方法/装置，其特征在于，针对多个终端中的每一个预先确定与预定的第二控制信息格式对应的传输模式，在一组控制信道候选的第一预定部分中发送第一控制 第一尺寸的信息格式，基于第二控制信息格式定义与要应用于该组控制信道候选的第二预定部分的第一大小不同的第二大小的调度许可格式，将第一尺寸 以与第二尺寸相匹配，并且在第二预定部分中传送等式的第一控制信息; 以及一种方法/装置，包括在接收到与传输模式相关的配置消息时，在第一和第二预定部分中监视第一控制信息格式的接收，继续监视和监视接收调度授权格式。

公开(公告)号：US20120167973A1

公开(公告)日：2012-07-05

申请号：US13089321

申请日：2011-04-19

Applicant: Yen-Cheng Hu ,  Peng Chen ,  Shuo-Wei Liang ,  Zhen-Cheng Wu

Inventor： Yen-Cheng Hu ,  Peng Chen ,  Shuo-Wei Liang ,  Zhen-Cheng Wu

IPC: H01L31/0216 ,  H01L31/0232 ,  B82Y99/00

CPC classification number: H01L31/02168 ,  H01L31/022441 ,  H01L31/035209 ,  H01L31/035227 ,  H01L31/0682 ,  Y02E10/547

Abstract: A solar cell includes a semiconductor substrate, a doping layer, a quantum well layer, a first passivation layer, a second passivation layer, a first electrode and a second electrode. The semiconductor substrate has a front surface and a back surface, and the front surface of the semiconductor substrate includes nano-rods. The doping layer covers the surface of the nano-rods. The electrode layers cover the doping layer. The quantum well layer having at least one first doping region and at least one second doping region is disposed on the semiconductor substrate. The quantum well layer includes polycrystalline silicon germanium (Si1-xGex). The first passivation layer and the second passivation layer cover the first and the second doping regions of the quantum well layer, respectively. The first electrode and the second electrode are electrically connected to the first doping region and the second doping region of the quantum well layer, respectively.

Abstract translation: 太阳能电池包括半导体衬底，掺杂层，量子阱层，第一钝化层，第二钝化层，第一电极和第二电极。 半导体衬底具有前表面和后表面，并且半导体衬底的前表面包括纳米棒。 掺杂层覆盖纳米棒的表面。 电极层覆盖掺杂层。 具有至少一个第一掺杂区域和至少一个第二掺杂区域的量子阱层设置在半导体衬底上。 量子阱层包括多晶硅锗（Si1-xGex）。 第一钝化层和第二钝化层分别覆盖量子阱层的第一和第二掺杂区域。 第一电极和第二电极分别电连接到量子阱层的第一掺杂区域和第二掺杂区域。

公开(公告)号：US20120106569A1

公开(公告)日：2012-05-03

申请号：US13147489

申请日：2009-02-03

Applicant: Xiang Guang Che ,  Peng Chen ,  Frank Frederiksen ,  Troels Emil Kolding ,  Esa Tapani Tiirola

Inventor： Xiang Guang Che ,  Peng Chen ,  Frank Frederiksen ,  Troels Emil Kolding ,  Esa Tapani Tiirola

IPC: H04J3/16

CPC classification number: H04L1/1635 ,  H04L1/1671

Abstract: There is provided a method including performing frequency domain acknowledgement/negative acknowledgement (ACK/NAK) bundling across component carriers within a user equipment reception bandwidth; generating a bundled ACK/NAK value corresponding to at least one code word on the basis of the performed ACK/NAK bundling; and including information relating to the generated bundled ACK/NAK value and the number of detected downlink grants within the user equipment reception bandwidth in an ACK/NAK resource to be transmitted on an uplink control channel.

Abstract translation: 提供了一种方法，包括在用户设备接收带宽内在分量载波之间执行频域确认/否定确认（ACK / NAK）捆绑; 基于执行的ACK / NAK捆绑生成与至少一个代码字对应的捆绑的ACK / NAK值; 并且包括在上行链路控制信道上要发送的ACK / NAK资源中的生成的捆绑ACK / NAK值和用户设备接收带宽内检测到的下行链路许可数量的信息。

公开(公告)号：US08120012B2

公开(公告)日：2012-02-21

申请号：US12442180

申请日：2006-09-22

Applicant: Soo-Jin Chua ,  Peng Chen ,  Zhen Chen ,  Eiryo Takasuka

Inventor： Soo-Jin Chua ,  Peng Chen ,  Zhen Chen ,  Eiryo Takasuka

IPC: H01L29/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L33/305 ,  H01L33/32 ,  H01S5/3412 ,  H01S5/34333

Abstract: A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x

Abstract translation: 白色发光二极管包括n型半导体层，在n型半导体层上形成的一个或多个量子阱结构，形成在量子阱结构上的p型半导体层，形成在p型半导体层上的第一电极， 和形成在n型半导体层的至少一部分上的第二电极。 每个量子阱结构包括In x Ga 1-x N量子阱层，In y Ga 1-y N势垒层（x> 0.3或x = 0.3）和In x Ga 1-z N量子点，其中x

公开(公告)号：US20110269250A1

公开(公告)日：2011-11-03

申请号：US12772508

申请日：2010-05-03

Applicant: Rong Zhang ,  Zili Xie ,  Bin Liu ,  Xiangqian Xiu ,  Henan Fang ,  Hong Zhao ,  Xuemei Hua ,  Ping Han ,  Peng Chen ,  Youdou Zheng

Inventor： Rong Zhang ,  Zili Xie ,  Bin Liu ,  Xiangqian Xiu ,  Henan Fang ,  Hong Zhao ,  Xuemei Hua ,  Ping Han ,  Peng Chen ,  Youdou Zheng

IPC: H01L21/3205

CPC classification number: C23C16/0272 ,  C23C16/34 ,  C30B25/02 ,  C30B29/38 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0262

Abstract: A kind of growth method of Fe3N, and the growth is in the MOCVD system, including following process: 1). the surface nitridation of sapphire substrate would be made; 2). pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3). the temperature would be raised and grow the GaN supporting layer; 4). pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films could be obtained. The invention realizes growing high quality Fe3N film. According to the problem of growing material with difficulty, the problems are solved by controlling and adjusting the conditions for the flux of organic gallium source and iron source, growth temperature, growth time, the flux of ammonia, and mole ratio of N and Ga. In the invention, the method is easy, the growth process could be controlled, and thus the growth method and the process control of growth technology have advancement.

Abstract translation: 一种Fe3N的生长方法，并且生长在MOCVD系统中，包括以下过程：1）。 将制作蓝宝石衬底的表面氮化; 2）。 泵送载气N2，氨和有机镓源，并在底物上生长低温GaN缓冲液; 3）。 温度升高并生长GaN支撑层; 4）。 泵浦FeCp2作为Fe源，然后在GaN支撑层上生长Fe3N; 可以获得Fe3N颗粒膜和Fe3N单晶膜。 本发明实现了生长高品质的Fe3N膜。 根据难以生长材料的问题，通过控制和调节有机镓源和铁源的通量条件，生长温度，生长时间，氨通量和N和Ga的摩尔比来解决问题。 在本发明中，该方法容易，可以控制生长过程，因此生长方法和生长技术的过程控制有所进步。

公开(公告)号：US08015584B2

公开(公告)日：2011-09-06

申请号：US10273527

申请日：2002-10-18

Applicant: George Edward Breen ,  Stephen Jay Kraiman ,  Travis Randall Parchman ,  Jason Lee Weiler ,  Philip John Stroffolino ,  Peng Chen

Inventor： George Edward Breen ,  Stephen Jay Kraiman ,  Travis Randall Parchman ,  Jason Lee Weiler ,  Philip John Stroffolino ,  Peng Chen

IPC: H04N7/173

CPC classification number: H04N21/21815 ,  H04N7/17318 ,  H04N21/235 ,  H04N21/2387 ,  H04N21/2665 ,  H04N21/4312 ,  H04N21/4314 ,  H04N21/435 ,  H04N21/443 ,  H04N21/47202 ,  H04N21/482 ,  H04N21/6118 ,  H04N21/6168 ,  H04N21/6587 ,  H04N21/84

Abstract: A method for interactive delivery of multimedia content includes accepting interactive multimedia content encoded in a multiplexed data stream, the stream includes segments that at least some include control data for presentation of the content. The method also includes receiving requests from one or more terminals, at least some of the requests identifies particular segments of the multiplexed data stream, and transmitting identified segments of the multiplexed data stream to the terminals in response to the received requests.

Abstract translation: 一种用于多媒体内容的交互传送的方法包括接受以多路复用数据流编码的交互式多媒体内容，该流包括至少一些包括用于呈现内容的控制数据的片段。 所述方法还包括从一个或多个终端接收请求，所述请求中的至少一些请求识别所述多​​路复用数据流的特定段，以及响应于所接收到的请求，向所述终端发送所述多路复用数据流的识别段。

公开(公告)号：US20110160153A1

公开(公告)日：2011-06-30

申请号：US12651251

申请日：2009-12-31

Applicant: Guihua Lan ,  Peng Chen ,  Feng Lan ,  Song Fang

Inventor： Guihua Lan ,  Peng Chen ,  Feng Lan ,  Song Fang

IPC: A61K31/706 ,  C07J71/00 ,  A61P9/00

CPC classification number: A61K31/706 ,  A61K36/258

Abstract: Methods for preparing improved Panax Notoginseng saponin fraction from a Sanchi extract and its use in pharmaceutical compositions for treating or preventing a blood circulation disorder.

Abstract translation: 用于从Sanchi提取物制备改进的三七人参皂甙组分的方法及其用于治疗或预防血液循环障碍的药物组合物中的用途。

公开(公告)号：US07949899B2

公开(公告)日：2011-05-24

申请号：US12174635

申请日：2008-07-17

Applicant: Peng Chen ,  Yao Zhao ,  Hua-Dong Cheng ,  Wen-Chuan Lian ,  Han-Che Wang ,  Kuan-Hong Hsieh

Inventor： Peng Chen ,  Yao Zhao ,  Hua-Dong Cheng ,  Wen-Chuan Lian ,  Han-Che Wang ,  Kuan-Hong Hsieh

IPC: G06F11/00

CPC classification number: G01R31/319

Abstract: An electronic apparatus testing method is provided. The method includes the step of: reading a product ID of the electronic apparatus when the electronic apparatus is connected to a control apparatus; determining the device type ID from the product ID, wherein the product ID comprises basic information of the electronic apparatus, determining the script files of the functions of the electronic apparatus in the testing table according to the device type ID; obtaining the script files from a data storage and running the script files to test functions of the electronic apparatuses, sending a control instruction to the corresponding measuring device of the function to control the measuring device test the function during the process of running the script files; and displaying test results through a display of the control apparatus.

Abstract translation: 提供电子设备测试方法。 该方法包括以下步骤：当电子设备连接到控制设备时，读取电子设备的产品ID; 从产品ID确定设备类型ID，其中产品ID包括电子设备的基本信息，根据设备类型ID确定测试表中的电子设备的功能的脚本文件; 从数据存储器获取脚本文件并运行脚本文件以测试电子设备的功能，向相应的测量设备发送控制指令以控制测试设备在运行脚本文件的过程中测试功能; 并通过控制装置的显示来显示测试结果。

公开(公告)号：US07910937B2

公开(公告)日：2011-03-22

申请号：US11344472

申请日：2006-02-01

Applicant: Peng Chen ,  Soo Jin Chua ,  Zhonglin Miao ,  Sudhiranjan Tripathy

Inventor： Peng Chen ,  Soo Jin Chua ,  Zhonglin Miao ,  Sudhiranjan Tripathy

IPC: H01L33/00

CPC classification number: B82Y20/00 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/04

Abstract: A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.

Abstract translation: 用于在硅衬底上制造III-V族氮化物层的方法和结构包括衬底，具有AlGaN，AlN和GaN层的过渡结构，以及具有AlGaN和GaN层的超晶格结构。 在本发明中，通过使用AlN作为第一缓冲层，在AlN（0001）和Si（111）晶格之间具有5:4的一致性来解决GaN和硅之间的大晶格失配（17％），以将晶格失配减小到1.3 ％。

公开(公告)号：US20100303035A1

公开(公告)日：2010-12-02

申请号：US12787808

申请日：2010-05-26

Applicant: Adele Gao ,  Peng Chen ,  Kari P. Pajukoski ,  Esa T. Tiirola

Inventor： Adele Gao ,  Peng Chen ,  Kari P. Pajukoski ,  Esa T. Tiirola

IPC: H04W72/04

CPC classification number: H04L5/0007 ,  H04L5/001 ,  H04L5/0053 ,  H04L5/0055

Abstract: It is determined that there are X uplink control channel resources available for uplink signaling. Each of those X uplink control channel resources are sub-channelized into a plurality of sub-channels that each defines a unique time instant or point in time. For each of Y units of control information there is selected a unique combination of one of the sub-channels and a modulation (X and Y are each integers greater than one). The Y units of control information are sent on the X uplink control channel resources according to the respectively selected combinations. By example the uplink resources may be an ACK/NAK/DTX bit on a PUCCH. In one example the sub-channels are individual slots of a PUCCH. In another example the sub-channels are the reference-signal part and the data part of a single PUCCH slot.

Abstract translation: 确定存在可用于上行链路信令的X个上行链路控制信道资源。 这些X个上行链路控制信道资源中的每一个被子信道化为多个子信道，每个子信道定义唯一的时刻或时间点。 对于Y单位的控制信息，选择子信道之一和调制（X和Y各自为大于1的整数）的唯一组合。 控制信息的Y单元根据所选择的组合在X上行链路控制信道资源上发送。 作为示例，上行链路资源可以是PUCCH上的ACK / NAK / DTX比特。 在一个示例中，子信道是PUCCH的各个时隙。 在另一示例中，子信道是单个PUCCH时隙的参考信号部分和数据部分。