公开(公告)号：US20230375399A1

公开(公告)日：2023-11-23

申请号：US18026308

申请日：2021-09-16

Applicant: Omar MAGANA-LOAIZA ,  Chenglong YOU

Inventor： Omar MAGANA-LOAIZA ,  Chenglong YOU

IPC: G01J1/02 ,  G01J1/44 ,  G06N3/04

CPC classification number: G01J1/0238 ,  G01J1/0271 ,  G01J1/44 ,  G06N3/04 ,  G01J2001/442 ,  G01J2001/448

Abstract: A method and system for identification of light source types includes detecting individual photons for a measurement time period to provide a times series of individual photon events, segmenting the time series into a plurality of time bins, and determining a number of detected photons within each time bin to provide a time series of photon counts, determining a probability distribution P(n) from the time series of photon counts, the probability distribution providing the probability of detection of n photons (n=0 . . . nmax), inputting each of the values of P(n) as a nmax+1 component feature vector into a single neuron neural network that has been previously trained on a plurality of light source types, and receiving as output a classifier that has a value that identifies the light source type. An average number of photons in the plurality of time bins is less than one photon.

公开(公告)号：US20180301875A1

公开(公告)日：2018-10-18

申请号：US15951824

申请日：2018-04-12

Applicant: Sense Photonics, Inc.

Inventor： Scott Burroughs ,  Brent Fisher ,  James Carter

IPC: H01S5/42 ,  H01S5/40 ,  H01S5/062 ,  H01S5/183 ,  G02B26/10

CPC classification number: H01S5/18397 ,  F21V5/041 ,  F21V5/045 ,  G01J1/44 ,  G01J2001/448 ,  G01S7/4815 ,  G01S17/02 ,  G01S17/89 ,  G02B3/0006 ,  G02B5/0883 ,  G02B26/10 ,  H01L25/50 ,  H01L31/167 ,  H01L31/18 ,  H01S3/025 ,  H01S5/0028 ,  H01S5/0071 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02288 ,  H01S5/02292 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/062 ,  H01S5/12 ,  H01S5/183 ,  H01S5/18394 ,  H01S5/30 ,  H01S5/40 ,  H01S5/4025 ,  H01S5/4037 ,  H01S5/4075 ,  H01S5/423

Abstract: A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

公开(公告)号：US20180204971A1

公开(公告)日：2018-07-19

申请号：US15868577

申请日：2018-01-11

Applicant: JOLED INC.

Inventor： Tetsuro YAMAMOTO

IPC: H01L31/113 ,  H01L27/144 ,  H01L31/02 ,  G01J1/46 ,  G01T1/24

CPC classification number: H01L31/1136 ,  G01J1/46 ,  G01J2001/448 ,  G01T1/208 ,  G01T1/247 ,  H01L27/1446 ,  H01L31/02019

Abstract: A photodetector circuit includes: a photodetector transistor; a current output transistor; a switching transistor; and a first capacitor. The source of the photodetector transistor, the gate of the current output transistor, and the first terminal of the first capacitor are connected to one another. The source of the current output transistor, the drain of the switching transistor, and the second terminal of the first capacitor are connected to one another. The photodetector transistor has a drain connected to a reference potential line, and upon receiving light when the photodetector transistor is in an off state, the source of the photodetector transistor collects electric charges generated by an internal photoelectric effect. The current output transistor has a drain connected to a power line which can have a first power supply potential and a second power supply potential. The switching transistor has a source connected to a photodetection line.

公开(公告)号：US10012534B2

公开(公告)日：2018-07-03

申请号：US15318373

申请日：2014-07-02

Applicant: The Johns Hopkins University

Inventor： Andreas G. Andreou ,  Joseph H. Lin ,  Philippe O. Pouliquen ,  Charbel G. Rizk

IPC: G01J1/44 ,  H01L31/02 ,  H01L31/107 ,  H01L31/0352

CPC classification number: G01J1/44 ,  G01J2001/4406 ,  G01J2001/442 ,  G01J2001/4466 ,  G01J2001/448 ,  H01L31/02027 ,  H01L31/035272 ,  H01L31/107

Abstract: A photodetection circuit includes an avalanche photodiode and a mode switching circuit that may be configured to selectively switch an operating mode of the photodetection circuit between linear mode and Geiger mode. The photodetection circuit may further include a quenching circuit configured to quench and reset the avalanche photodiode in response to an avalanche event when the photodetection circuit is operated in Geiger mode. The photodetection circuit may additionally include an integration circuit configured to integrate photocurrent output by the photodiode and generate integrated charge units when the photodetection circuit is operated in linear mode. The photodetection circuit may also include a counter configured to count pulses output by the avalanche photodiode when the photodetection circuit is operated in Geiger mode and to count integrated charge units generated by the integration circuit when the photodetection circuit is operated in linear mode.

公开(公告)号：US20180180471A1

公开(公告)日：2018-06-28

申请号：US15843492

申请日：2017-12-15

Applicant: SICK AG

Inventor： Martin MARRA ,  Stefan SEITZ

IPC: G01J1/44 ,  G01J1/42 ,  G01S7/486 ,  G06K7/14

CPC classification number: G01J1/44 ,  G01J1/0252 ,  G01J1/4228 ,  G01J1/46 ,  G01J2001/4406 ,  G01J2001/444 ,  G01J2001/4466 ,  G01J2001/448 ,  G01S7/4863 ,  G01S7/4865 ,  G01S7/497 ,  G01S17/89 ,  G06K7/1408

Abstract: A light receiver (22) comprisinga plurality of avalanche photodiode elements (24), a first terminal (40) and a second terminal (42) for supplying a bias voltage so that the avalanche photodiode elements (24) are biased with a bias voltage above a breakdown voltage and thus operated in a Geiger mode, at least one temperature measuring element (44) for measuring an operating temperature of the avalanche photodiode elements (24) and a voltage compensation unit (46) for adapting the bias voltage to the operating temperature.

公开(公告)号：US20180180470A1

公开(公告)日：2018-06-28

申请号：US15830397

申请日：2017-12-04

Applicant: SICK AG

Inventor： Stefan SEITZ

IPC: G01J1/44

CPC classification number: G01J1/44 ,  G01J1/46 ,  G01J2001/4406 ,  G01J2001/442 ,  G01J2001/4466 ,  G01J2001/448 ,  G01S7/4863 ,  G01S7/4868 ,  G01S7/497 ,  G01S17/08 ,  G01S17/89 ,  H04B10/69

Abstract: A light receiver (22) having a plurality of avalanche photodiode elements (24) biased with a bias voltage above a breakdown voltage and thus operated in a Geiger mode in order to trigger a Geiger current upon light reception,wherein the avalanche photodiode elements (24) form a plurality of groups, wherein the light receiver (22) comprises a plurality of bias voltage terminals for supplying groups with different bias voltages and/or a plurality of readout circuits (60, 62, 64), each associated with a group (721-72n) and comprising a measurement path (60) and a blanking path (64) as well as a switching element (62) for selectively supplying the Geiger current, or a measurement current corresponding to the Geiger current, to the measurement path (60) or the blanking path (64).

公开(公告)号：US20180120152A1

公开(公告)日：2018-05-03

申请号：US15566204

申请日：2016-04-07

Applicant: ams AG

Inventor： Vincenzo LEONARDO

IPC: G01J1/42 ,  H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  H01L31/12

CPC classification number: G01J1/4228 ,  G01J2001/442 ,  G01J2001/4466 ,  G01J2001/448 ,  G01T1/17 ,  G01T1/40 ,  H01L27/1446 ,  H01L27/14681 ,  H01L31/02027 ,  H01L31/107 ,  H01L31/125 ,  H01L31/173

Abstract: An avalanche diode arrangement (10) comprises an avalanche diode (11) that is coupled to a first voltage terminal (16) and to a first node (13), an event detector (14) for detecting a trigger event of the avalanche diode (11) and being coupled to the first node (13), a quenching circuit (15) that is coupled to the first node (13), and a detection circuit (20) coupled to the first node (13). The detection circuit (20) is configured to provide a detection signal (SVC2) that depends on a value of a node voltage (SVA) at the first node (13).

公开(公告)号：US09945718B2

公开(公告)日：2018-04-17

申请号：US14591763

申请日：2015-01-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich Boettiger

IPC: H01L27/00 ,  G01J1/04 ,  G01J1/02 ,  G01J3/28 ,  G01J4/04 ,  G01J3/02 ,  G01J1/42 ,  H04N5/369 ,  H04N9/04 ,  G01J1/44

CPC classification number: G01J1/0488 ,  G01J1/0209 ,  G01J1/0411 ,  G01J1/4228 ,  G01J3/0208 ,  G01J3/0259 ,  G01J3/2803 ,  G01J4/04 ,  G01J2001/448 ,  H04N5/3696 ,  H04N9/045

Abstract: An imaging system may include several different types of pixels that are each configured to detect different characteristics of light received at the imaging system. An imaging system may include image sensing pixels that detect the wavelength and intensity of the light, direction sensing pixels that detect the directionality of the light, polarization sensing pixels that detect a polarization state of the light, and diffractive wavelength separation pixels that detect multiple different wavelength components of the light. One or more pixels of the different types may be arranged in a pixel cluster. A pixel cluster that includes different pixel types may detect spatially correlated information for multiple characteristics of the light. Multiple pixel clusters may be arranged in a pixel array that generates an image based on spatially correlated information for the different characteristics of the light.

公开(公告)号：US09787907B2

公开(公告)日：2017-10-10

申请号：US14846938

申请日：2015-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tatsuo Itoh ,  Koichi Kusukame

IPC: H04N5/235 ,  G01J1/08 ,  G01J1/44 ,  G06K9/00 ,  G06T7/20 ,  H04N5/232 ,  H04N5/335 ,  H04N5/345 ,  H04N5/355 ,  G06T7/90 ,  G06K9/20

CPC classification number: H04N5/2354 ,  G01J1/08 ,  G01J1/44 ,  G01J2001/448 ,  G06K9/00771 ,  G06K9/2018 ,  G06K9/2027 ,  G06T7/20 ,  G06T7/90 ,  G06T2207/10024 ,  H04N5/23251 ,  H04N5/335 ,  H04N5/35563 ,  H04N9/04511

Abstract: A substance detection device includes an illuminator that illuminates a monitoring range with light at a first wavelength and light at a second wavelength at different timings, an image capturer that obtains a first actual image by capturing an image of the monitoring range which is illuminated by the light at the first wavelength and obtains a second actual image by capturing an image of the monitoring range which is illuminated by the light at the second wavelength, and an image processor that acquires a difference in lightness of corresponding pixels between the first actual image and the second actual image that are obtained by the image capturer, compares the acquired difference in lightness of the corresponding pixels with a reference value, and detects a specific substance that is present in the monitoring range based on a result of the comparison.

公开(公告)号：US09766123B2

公开(公告)日：2017-09-19

申请号：US15317592

申请日：2015-06-09

Applicant: STC.UNM

Inventor： Steven R. J. Brueck ,  Alexander Neumann ,  Payman Zarkesh-Ha

IPC: G01J5/02 ,  G01J1/06 ,  G01J3/28 ,  G01J3/18 ,  G01J1/44 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/103 ,  H01L31/02 ,  H01L31/0216 ,  G02B6/122 ,  G02B6/12 ,  G02B6/124

CPC classification number: G01J1/06 ,  G01J1/44 ,  G01J3/0218 ,  G01J3/0259 ,  G01J3/18 ,  G01J3/1895 ,  G01J3/2803 ,  G01J2001/448 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/124 ,  G02B2006/12061 ,  G02B2006/12107 ,  G02B2006/12138 ,  H01L27/1446 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/103

Abstract: A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.