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    Device for controlling optical frequency, method of manufacturing such a device
    132.
    发明授权
    Device for controlling optical frequency, method of manufacturing such a device 有权
    用于控制光频率的装置，制造这种装置的方法

    公开(公告)号：US08885247B2

    公开(公告)日：2014-11-11

    申请号：US13387607

    申请日：2010-07-26

    Applicant: Xavier Letartre ,  Pierre Viktorovitch ,  Jean-Louis Leclercq ,  Christian Seassal

    Inventor： Xavier Letartre ,  Pierre Viktorovitch ,  Jean-Louis Leclercq ,  Christian Seassal

    IPC: G02F1/35 ,  G02B1/00 ,  G02F1/017 ,  G02F2/00 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/183

    CPC classification number: G02F1/3534 ,  B82Y20/00 ,  G02B1/005 ,  G02F1/01716 ,  G02F2/004 ,  G02F2201/346 ,  G02F2203/15 ,  H01S5/105 ,  H01S5/183

    Abstract: The present invention relates to a device for controlling optical frequency (F1, F2) about a central working frequency (F0). This device comprises a vertical cavity (2) formed of two parallel and partially reflecting walls (3a, 3b), and a membrane (6) comprising at least one layer (7a, 7b) structured in the form of a photonic crystal. In this device, the two walls (3a, 3b) are separated by an optical distance substantially proportional to half the wavelength (λ0) corresponding to the central working frequency (F0). The membrane (6) is integrated between the walls (3a, 3b) of the cavity (2) and devised in such a way as to exhibit a mode of optical resonance at this central working wavelength (λ0). At least one layer of the device is made up of at least one portion of a material exhibiting nonlinear optical properties. The present invention also relates to various systems implementing means of optical pumping and such a device for controlling optical frequency, as well as to a method of manufacturing such a device for controlling optical frequency.

    Abstract translation: 本发明涉及一种用于控制关于中心工作频率（F0）的光频率（F1，F2）的装置。 该装置包括由两个平行和部分反射的壁（3a，3b）形成的垂直腔（2）和包括以光子晶体形式构成的至少一个层（7a，7b）的膜（6）。 在该装置中，两个壁（3a，3b）被分开一个基本上与对应于中心工作频率（F0）的波长（λ0）的一半成比例的光学距离。 膜（6）整合在空腔（2）的壁（3a，3b）之间，并以这种方式设计，以便在该中心工作波长（λ0）处表现出光学共振的模式。 该装置的至少一层由显示非线性光学特性的材料的至少一部分组成。 本发明还涉及实现光泵浦装置的各种系统以及用于控制光频率的装置，以及制造这种用于控制光频率的装置的方法。

    Wavelength Conversion Light Source Device
    133.
    发明申请
    Wavelength Conversion Light Source Device 审中-公开
    波长转换光源装置

    公开(公告)号：US20120218763A1

    公开(公告)日：2012-08-30

    申请号：US13504461

    申请日：2009-11-11

    Applicant: Jiro Saikawa ,  Koji Tojo ,  Yutaka Ido

    Inventor： Jiro Saikawa ,  Koji Tojo ,  Yutaka Ido

    IPC: F21V9/00

    CPC classification number: H01S5/141 ,  G02F1/3544 ,  G02F2001/3548 ,  G02F2201/346 ,  H01S5/101 ,  H01S5/1212

    Abstract: A device is provided with a semiconductor gain medium (1) having an inclined or curved stripe structure, a Volume Bragg Grating element (3) constituting a resonator with the semiconductor gain medium (1), and a wavelength conversion element (5) which outputs a harmonic wave (H) of a fundamental wave (A) from the resonator. Preferably, the semiconductor gain medium (1) is a frequency incoherent and broadband semiconductor gain medium, the wavelength conversion element (5) is a periodic polarization type nonlinear wavelength conversion element, and the Volume Bragg Grating element (3) and the periodic polarization type nonlinear wavelength conversion element (5) have a grating period having a chirped structure.

    Abstract translation: 一种器件设置有具有倾斜或弯曲条纹结构的半导体增益介质（1），构成具有半导体增益介质（1）的谐振器的体积布拉格光栅元件（3）和输出的波长转换元件（5） 来自谐振器的基波（A）的谐波（H）。 优选地，半导体增益介质（1）是频率非相干和宽带半导体增益介质，波长转换元件（5）是周期性偏振型非线性波长转换元件，体积布拉格光栅元件（3）和周期极化类型 非线性波长转换元件（5）具有啁啾结构的光栅周期。

    Laser ray wavelength modification apparatus
    134.
    发明申请
    Laser ray wavelength modification apparatus 审中-公开
    激光射线波长修正装置

    公开(公告)号：US20120105943A1

    公开(公告)日：2012-05-03

    申请号：US13317936

    申请日：2011-11-01

    Applicant: Hidekazu Hatanaka

    Inventor： Hidekazu Hatanaka

    IPC: G02F1/35

    CPC classification number: H01S5/141 ,  G02F1/3501 ,  G02F2001/3503 ,  G02F2201/346 ,  H01S3/109 ,  H01S5/4031

    Abstract: A laser ray wavelength modification apparatus that includes a semiconductor laser element, a fundamental wave light reflecting element, a wavelength modification element, a selective reflection member and a dichroic mirror. The selective reflection member permits fundamental wave light among light rays emitted from the wavelength modification element to pass through to the fundamental wave light reflecting element while reflecting the wavelength modification light. The dichroic mirror is arranged between the semiconductor laser element and the wavelength modification element. The dichroic mirror transmits the fundamental wave light and removes by reflection out the wavelength modification light.

    Abstract translation: 一种激光射线波长修正装置，包括半导体激光元件，基波光反射元件，波长修正元件，选择反射元件和二向色镜。 选择反射构件允许从波长修改元件发射的光中的基波波通过到基波光反射元件，同时反射波长修改光。 分色镜配置在半导体激光元件和波长修正元件之间。 分色镜透射基波光，并通过反射去除波长修正光。

    Integration of buried oxide layers with crystalline layers
    135.
    发明授权
    Integration of buried oxide layers with crystalline layers 有权
    将掩埋氧化物层与结晶层集成

    公开(公告)号：US08008215B2

    公开(公告)日：2011-08-30

    申请号：US11433736

    申请日：2006-05-12

    Applicant: Sheila Tandon ,  Gale Petrich ,  Leslie Kolodziejski

    Inventor： Sheila Tandon ,  Gale Petrich ,  Leslie Kolodziejski

    IPC: H01L21/31

    CPC classification number: G02F1/3523 ,  G02F2201/346 ,  H01L33/10 ,  H01S3/1118 ,  H01S5/18311 ,  H01S5/18372

    Abstract: A method of forming a buried oxide/crystalline III-V semiconductor dielectric stack is presented. The method includes providing a substrate and forming a layered structure on the substrate comprising of layers of different materials, one of the different materials is selected to be an oxidizable material to form one or more buried low index oxide layers. A first sequence of oxidizing steps are performed on the layered structure by exposing the edges of the layered structure to a succession of temperature increases in the presence of steam from an initial temperature to the desired oxidation temperature for a time interval equal to the sum of the time intervals of the succession of temperature increases. Also, the method includes performing a second sequential oxidizing step with steam on the layered structure at the specific oxidation temperature for a specific time interval. Furthermore, the method includes performing a final sequence of oxidizing steps on the structure by ramping down from the desired oxidation temperature to a final temperature when the oxidizing material is completely oxidized to form the one or more buried low index oxide layers.

    Abstract translation: 提出了形成掩埋氧化物/晶体III-V半导体电介质堆叠的方法。 该方法包括提供衬底并在包括不同材料的层的衬底上形成层状结构，不同材料之一被选择为可氧化材料以形成一个或多个掩埋的低折射率氧化物层。 通过将层状结构的边缘暴露于蒸汽存在下的一连串的温度升高，在层状结构上进行第一序列氧化步骤，时间间隔等于初始温度至期望的氧化温度 温度连续的时间间隔增加。 此外，该方法包括在特定氧化温度下在特定时间间隔内在层状结构上用蒸汽进行第二顺序氧化步骤。 此外，该方法包括当氧化材料被完全氧化以形成一个或多个掩埋的低折射率氧化物层时，通过从期望的氧化温度向下倾斜到最终温度，在结构上执行最终的氧化步骤序列。

    Reflective spatial light modulator
    136.
    发明授权
    Reflective spatial light modulator 有权
    反射空间光调制器

    公开(公告)号：US07876405B2

    公开(公告)日：2011-01-25

    申请号：US12327259

    申请日：2008-12-03

    Applicant: Haruyasu Ito ,  Yasushi Ohbayashi ,  Norihiro Fukuchi

    Inventor： Haruyasu Ito ,  Yasushi Ohbayashi ,  Norihiro Fukuchi

    IPC: G02F1/1335

    CPC classification number: G02F1/29 ,  G02F1/136277 ,  G02F2001/291 ,  G02F2201/346 ,  G02F2202/40 ,  G02F2203/02 ,  G02F2203/12

    Abstract: The present invention relates to a reflective spatial light modulator enabling improvement of light resistance and prevention of damaging of the liquid crystal layer. The reflective spatial light modulator controls phases of the incident light and a reflected light while reflecting light made incident from a front side, and comprises a liquid crystal layer, a dielectric multilayer film, and a phase shift layer. The liquid crystal layer is filled with a liquid crystal comprised of a light modulating material, and modulates the incident light. The dielectric multilayer film reflects the incident light. The phase shift layer is disposed between the liquid crystal layer and the dielectric multilayer film to shift phases of the incident light and the reflected light at an interface of the liquid crystal layer.

    Abstract translation: 本发明涉及能够改善耐光性并防止液晶层受损的反射空间光调制器。 反射空间光调制器控制入射光和反射光的相位，同时反射从正面入射的光，并且包括液晶层，电介质多层膜和相移层。 液晶层填充有由光调制材料构成的液晶，并调制入射光。 电介质多层膜反射入射光。 相移层设置在液晶层和电介质多层膜之间，以将液晶层的界面上的入射光和反射光的相位移位。

    Rapidly reconfigurable all-optical universal logic gate
    137.
    发明授权
    Rapidly reconfigurable all-optical universal logic gate 有权
    快速可重新配置的全光通用逻辑门

    公开(公告)号：US07791781B2

    公开(公告)日：2010-09-07

    申请号：US11805115

    申请日：2007-05-21

    Applicant: Lynford L. Goddard ,  Tiziana C. Bond ,  Jeffrey S. Kallman

    Inventor： Lynford L. Goddard ,  Tiziana C. Bond ,  Jeffrey S. Kallman

    IPC: G02F3/00

    CPC classification number: G02F3/00 ,  G02F3/026 ,  G02F2201/16 ,  G02F2201/346

    Abstract: A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

    Abstract translation: 提出了一种新的可重新配置的全光学片上设备。 门通过将游标效果与新颖效果（增益指数杆）结合起来，以帮助主动激光模式从在一个面处输出激光的模式移动到在另一个面处输出的模式。 由于激光器保持在阈值以上，逻辑运算的栅极速度以及对栅极功能重新编程的速度主要限于激光器的小信号光调制速度，其可以达到大约数量级 的GHz。 可以通过在门选择端口处使用适当的模拟光电或电信号，快速且重复地重新编程门来执行任何基本的数字逻辑操作。 其他全光学功能包括波长转换，信号复制，阈值切换，模数转换，数模转换，信号路由和环境感测。 由于每个门可以执行不同的操作，所以这种级联电路的功能呈指数增长。

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