公开(公告)号：US11143799B2

公开(公告)日：2021-10-12

申请号：US16926934

申请日：2020-07-13

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur

IPC: G02B5/02 ,  G02B6/12 ,  H05B33/12 ,  G02B6/122

Abstract: A diffusive layer including a laminate of a plurality of transparent films is provided. At least one of the plurality of transparent films includes a plurality of diffusive elements with a concentration that is less than a percolation threshold. The plurality of diffusive elements are optical elements that diffuse light that is impinging on such element. The plurality of diffusive elements can be diffusively reflective, diffusively transmitting or combination of both. The plurality of diffusive elements can include fibers, grains, domains, and/or the like. The at least one film can also include a powder material for improving the diffusive emission of radiation and a plurality of particles that are fluorescent when exposed to radiation.

公开(公告)号：US11124750B2

公开(公告)日：2021-09-21

申请号：US16142965

申请日：2018-09-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Faris Mills Morrison Estes ,  Alexander Dobrinsky

IPC: C12H1/16 ,  C12C11/00 ,  C12C7/20

Abstract: Ultraviolet irradiation of fluids for the purposes of disinfection, sterilization and modification of a target organic compound found within the fluids. The target compound in the fluids can have an absorption spectra with an ultraviolet wavelength ranging from 230 nm to 360 nm. The absorption spectra includes a first and second set of wavelengths corresponding to absorption peaks and absorption valleys in the absorption spectra, respectively. A-set of ultraviolet radiation sources irradiate the fluids. The set of ultraviolet radiation sources operate at a set of peak wavelengths ranging from 230 nm to 360 nm with a peak full width at half maximum that is less than 20 nm. The set of peak wavelengths are proximate to at least one wavelength in the second set of wavelengths corresponding to the absorption valleys in the absorption spectra with a variation of a full width half maximum of the absorption valley.

公开(公告)号：US11063178B2

公开(公告)日：2021-07-13

申请号：US16169431

申请日：2018-10-24

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/12 ,  H01L33/00 ,  H01L33/62 ,  H01L33/10 ,  H01L33/04

Abstract: A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

公开(公告)号：US10849996B2

公开(公告)日：2020-12-01

申请号：US15982531

申请日：2018-05-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Igor Agafonov

IPC: A61L2/10 ,  H04N5/33 ,  G01N27/12 ,  G01G19/52 ,  H04N7/18 ,  F25D17/04

Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

公开(公告)号：US10804423B2

公开(公告)日：2020-10-13

申请号：US15966022

申请日：2018-04-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur

IPC: H01L31/0352 ,  H01L33/00 ,  H01L31/105 ,  H01L31/0224 ,  H01L33/32 ,  H01L33/04 ,  H01L33/14 ,  H01L33/02 ,  H01L31/0304 ,  H01L31/109 ,  H01L33/06

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

公开(公告)号：US20200276345A1

公开(公告)日：2020-09-03

申请号：US16878509

申请日：2020-05-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Arthur Peter Barber, III

IPC: A61L2/24 ,  G01N21/64 ,  A61L2/08 ,  A61L2/10 ,  A61N5/06 ,  A61L2/00

Abstract: An illuminator comprising more than one set of ultraviolet radiation sources. A first set of ultraviolet radiation sources operate in a wavelength range of approximately 270 nanometers to approximately 290 nanometers. A second set of ultraviolet radiation sources operate in a wavelength range of approximately 380 nanometers to approximately 420 nanometers. The illuminator can also include a set of sensors for acquiring data regarding at least one object to be irradiated by the first and the second set of ultraviolet radiation sources. A control system configured to control and adjust a set of radiation settings for the first and the second set of ultraviolet radiation sources based on the data acquired by the set of sensors.

公开(公告)号：US10688210B2

公开(公告)日：2020-06-23

申请号：US15962574

申请日：2018-04-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Timothy James Bettles ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Michael Shur ,  Robert M. Kennedy ,  Arthur Peter Barber, III ,  Carlton Gibson

IPC: A61L2/24 ,  A61L2/10 ,  A61L9/20 ,  F25D17/04

Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

公开(公告)号：US10517974B2

公开(公告)日：2019-12-31

申请号：US15478759

申请日：2017-04-04

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Emmanuel Lakios

IPC: A61L2/10 ,  G02B3/08 ,  G02B5/02 ,  G02B5/08 ,  G02B5/10 ,  G02B6/02 ,  G02B19/00 ,  F21V8/00

Abstract: A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. The ultraviolet radiation from the set of ultraviolet radiation sources is directed towards a reflective surface located adjacent to the illuminator. The reflective surface can diffusively reflect at least 30% the ultraviolet radiation and the diffusive ultraviolet radiation can be within at least 40% of Lambertian distribution. A set of optical elements can be located between the illuminator and the reflective surface in order to direct the ultraviolet radiation towards at least 50% of the reflective surface.

公开(公告)号：US10483387B2

公开(公告)日：2019-11-19

申请号：US15464609

申请日：2017-03-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

公开(公告)号：US10478515B2

公开(公告)日：2019-11-19

申请号：US15622004

申请日：2017-06-13

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: G05D23/00 ,  F25D3/04 ,  F25D3/00 ,  A61L9/20 ,  A61L2/10

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.