Abstract:
PROBLEM TO BE SOLVED: To provide an active light-sensitive or a radiation-sensitive resin composition excellent in development defect performance, immersion defect performance and marginal resolving power, and capable of forming a pattern having a good shape, and to provide a pattern formation method using the same.SOLUTION: There is provided an active light-sensitive or a radiation-sensitive resin composition containing: a resin which has a reduced solubility to a developer containing an organic solvent by an action of an acid, has a repeating unit (P) having a group generating an alcoholic hydroxyl group by degradation by action of the acid, and has no fluorine atom and/or an aromatic group; a compound generating the acid by irradiation of an active light or radiation rays; and a hydrophobic resin. The active light-sensitive or the radiation-sensitive resin composition contains at least a compound generating the acid containing no fluorine atom by irradiation of the active light or the radiation rays as the compound generating the acid by irradiation of the active light or the radiation rays.
Abstract:
PROBLEM TO BE SOLVED: To provide an active light sensitive or radiation sensitive resin composition useful for fine pattern formation in semiconductor manufacturing and capable of remarkably reducing pattern collapse, development defects, liquid immersion defects (a water remaining defect, a valve defect) and scum, and a method for forming a pattern using the same.SOLUTION: The active light sensitive or radiation sensitive resin composition is characterized in that the retreat contact angle of water in the surface of a film formed by the active light sensitive or radiation sensitive resin composition is 65° or higher, and the retreat contact angle of water in the surface of the film after treatment with an alkali developer is 35° or lower. The method for forming a pattern uses the same.
Abstract:
PROBLEM TO BE SOLVED: To provide: an actinic ray- or radiation-sensitive resin composition which is excellent in exposure latitude and pattern roughness such as LWR, reduces occurrence of particles over time, and reduces, in the case of liquid-immersion exposure, elution of generated acids into an immersion liquid; an actinic ray- or radiation-sensitive film based on the same; and a method of forming a pattern.SOLUTION: The actinic ray- or radiation-sensitive resin composition includes (A) a compound represented by the specified general formula (1) that generates an acid when exposed to actinic rays or radiation, and (B) a resin.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition capable of suppressing pattern collapse and improving LWR (line width roughness) and storage stability, and a pattern forming method using the composition.SOLUTION: An actinic ray-sensitive or radiation-sensitive resin composition comprises: (A) resin having a repeating unit expressed by the following general formula (1) and a repeating unit that is decomposed by an action of an acid to increase the solubility in an alkali developing solution; (B) a compound Rincluding at least one nitrogen atom or a compound which is an ionic compound including a basic moiety Rincluding at least one nitrogen atom, both having such a property that R-Hor R-Has conjugated acids thereof has a pKa of 8 or lower; and (C) a compound that generates an acid by irradiation with actinic rays or radiation. In the general formula (1), L represents a single bond or a divalent connecting group; Rrepresents a hydrogen atom or an alkyl group; and Z represents a cyclic acid anhydride structure.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition having liquid physical properties such as a large depth of focus latitude and generation of fewer particles with lapse of time, and to provide a resist film, a pattern forming method, a method for manufacturing an electronic device and an electronic device using the composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes (A) a compound that generates an acid by irradiation with actinic rays or radiation and (B) a resin that is decomposed by an action of an acid to increase the solubility with an alkali developing solution. And the actinic ray-sensitive or radiation-sensitive resin composition includes, as the above compound (A), a combination (A-1) comprising specified two compounds or a combination (A-2) comprising specified two compounds. The composition is used for the resist film, the pattern forming method, the method for manufacturing an electronic device, and the electronic device.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a pattern for reducing a residue on a substrate and obtaining a favorable cross-sectional shape.SOLUTION: The method for forming a pattern includes steps of: (a) forming an antireflection film on a substrate by using a first resin composition (I); (b) forming a resist film on the antireflection film by using a second resin composition (II); (c) exposing a laminate film to light; and (d) forming a negative pattern by developing the exposed laminate film by using a developing solution containing an organic solvent. The first resin composition (I) contains a first resin having polarity that is increased by the action of acid to decrease solubility with the developing solution containing an organic solvent. The second resin composition (II) contains a second resin having polarity that is increased by the action of acid to decrease solubility with the developing solution containing an organic solvent. At least one of (I) and (II) contains a compound that generates acid by irradiation with actinic rays or radiation.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a pattern for preventing pattern collapse in a process of forming a negative pattern by organic solvent development, and to provide a laminate resist pattern formed by the method, a laminate film for organic solvent development suitably used for the pattern forming method, a resist composition suitably used for the pattern forming method, a method for manufacturing an electronic device, and an electronic device.SOLUTION: The method for forming a pattern includes steps of: (a) forming a first film on a substrate by using a first resin composition (I) containing a resin, in which the content of a repeating unit having a group that is decomposed by the action of acid to produce a polar group is 20 mol% or less with respect to the whole repeating units of the resin; (b) forming a second film on the first film by using a second resin composition (II), which is different from the first resin composition (I) and which contains a resin having a group that is decomposed by the action of acid to produce a polar group, and a compound that generates acid by irradiation with actinic rays or radiation; (c) exposing the laminate film having the first film and the second film to light; and (d) forming a negative pattern by developing the first film and the second film in the exposed laminate film by using a developing solution containing an organic solvent.
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition excellent in all of line edge roughness, pattern features, followability for an immersion liquid and dry etching durability, and to provide a resist film and a pattern forming method using the composition.SOLUTION: The radiation-sensitive resin composition contains: (A) a resin having a repeating unit expressed by general formula (I-1) or (I-2); and (C) a compound, which has a molar absorption coefficient ε, at a wavelength of 193 nm measured in an acetonitrile solvent, of a relative ratio of 0.8 or less with respect to triphenylsulfonium nonafluorobutane sulfonate and which generates an acid by irradiation with radiation. In general formulae (I-1) and (I-2), ARand ARrepresent an aromatic group; Rrepresents an alkyl group, a cycloalkyl group or an aryl group; Aand Aeach independently represent a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkyloxycarbonyl group; and Z represents a linking group to form a ring together with C-AR.
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method excellent in both of line width uniformity of a pattern and developing time-dependency of sensitivity, a chemically amplified resist composition and a resist film, for negative pattern formation with a developer containing an organic solvent.SOLUTION: A pattern forming method, in which a negative pattern is formed, comprises steps of: (1) forming a film with a chemically amplified resist composition containing (A) a resin that has 35 mol% or more of a repeating unit having an alcoholic hydroxyl group based on all repeating units in the resin, and is increased in its polarity and reduced in its solubility in a developer containing an organic solvent by an action of an acid, and (B) a compound that generates an acid by irradiation with an actinic ray or radiation; (2) exposing the film; and (3) developing a pattern with the developer containing the organic solvent.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition that is excellent in resolution such as a critical dimension with no bridge defects, and DOF, as well as a resist film and a pattern forming method using the composition.SOLUTION: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin that is decomposed by an action of an acid to produce an amide group or a thioamide group.