Drive assembly for multi-directional lateral displacement between tool
and workpiece
    141.
    发明授权
    Drive assembly for multi-directional lateral displacement between tool and workpiece 失效
    驱动组件用于工具和工件之间的多方位横向位移

    公开(公告)号:US4152570A

    公开(公告)日:1979-05-01

    申请号:US845906

    申请日:1977-10-27

    CPC classification number: B23H7/26 B23H7/28

    Abstract: A tool electrode for the electrical machining of a workpiece is displaced in various directions by the selective energization of a plurality of electromagnets on a first member. The pole pieces of the electromagnet on this member are juxtaposed with a conical surface of another, magnetically susceptible member. One of these members, e.g. the magnetically susceptible member, is connected to the tool electrode while the first member is connected to a support.

    Abstract translation: 通过在第一构件上选择性地激励多个电磁体,用于工件的电加工的工具电极在各个方向上移位。 该构件上的电磁体的极片与另一个易磁性构件的锥形表面并置。 这些成员之一,例如 磁敏元件连接到工具电极,而第一构件连接到支撑件。

    Servosystem for gap electrical machining processes (especially
electroerosion)
    143.
    再颁专利
    Servosystem for gap electrical machining processes (especially electroerosion) 失效
    间隙电加工工艺(特别是电腐蚀)的伺服系统

    公开(公告)号:USRE29399E

    公开(公告)日:1977-09-13

    申请号:US742447

    申请日:1976-11-17

    Applicant: Kiyoshi Inoue

    Inventor: Kiyoshi Inoue

    CPC classification number: B23H7/18 B23H1/022 B23H1/024 B23H7/16

    Abstract: A servosystem for electrical machining processes adapted to regulate a spark-discharge gap in electrodischarge machining and other material-removal, shaping or forming operations in which the energy of an electrical discharge across the gap is exploited. Instead of the usual reference voltage or other electrical value for comparison with a gap parameter whereby the difference or other algebraic comparison controls the electrode drive, a gap detector is provided to feed a substantially continuous (analog) value to a discriminator having a threshold value and producing a digital output in accordance with the comparison. The digital output represents an "advance" or a "retract" condition and is communicated via a suitable switch or amplifier to the respective electromagnetic member of the control system, the latter member being a servomotor mechanically coupled with the movable electrode or a fluid-control valve hydraulically or pneumatically coupled with the movable electrode.

    Method of treating a waste gas
    144.
    发明授权
    Method of treating a waste gas 失效
    处理废气的方法

    公开(公告)号:US3994790A

    公开(公告)日:1976-11-30

    申请号:US549762

    申请日:1975-02-13

    Applicant: Kiyoshi Inoue

    Inventor: Kiyoshi Inoue

    CPC classification number: B01D53/326

    Abstract: A method of removing a toxic component from a gas, comprising mixing the gas with an electrolyte and passing the mixture of gas and liquid electrolyte through a narrow gap between a pair of electrodes across which an electric field is applied to induce electrochemical reaction between the gas and the electrolyte.

    Abstract translation: 一种从气体中除去有毒成分的方法,包括将气体与电解质混合并使气体和液体电解质的混合物通过一对电极之间的窄间隙,通过该窄电极施加电场,以引起气体之间的电化学反应 和电解质。

    Iron-chromium-cobalt spinodal decomposition-type magnetic alloy
comprising niobium and/or tantalum
    145.
    发明授权
    Iron-chromium-cobalt spinodal decomposition-type magnetic alloy comprising niobium and/or tantalum 失效
    包含铌和/或钽的铁 - 铬 - 钴 - 旋转分解型磁性合金

    公开(公告)号:US3954519A

    公开(公告)日:1976-05-04

    申请号:US553651

    申请日:1975-02-27

    Applicant: Kiyoshi Inoue

    Inventor: Kiyoshi Inoue

    CPC classification number: C22C38/30 H01F1/04

    Abstract: A spinodal decomposition-type hard or semi-hard magnetic alloy consisting by weight essentially of 3 to 20 % cobalt, 10 to 40 % chromium, 0.2 to 5 % one or both of niobium and tantalum, 0 to 5 % aluminum and the balance of iron. When aluminum is to be incorporated, its lower limit should be 0.5 %.

    Abstract translation: 一种旋节分解型硬或半硬磁性合金,其重量基本上由3至20%的钴,10至40%的铬,0.2至5%的铌和钽之一或两者,0至5%的铝,余量为 铁。 当加入铝时,其下限应为0.5%。

    EDM power supply for generating self-adaptive discharge pulses
    146.
    再颁专利
    EDM power supply for generating self-adaptive discharge pulses 失效
    用于产生自适应放电脉冲的EDM电源

    公开(公告)号:USRE28734E

    公开(公告)日:1976-03-09

    申请号:US362823

    申请日:1973-05-22

    Applicant: Kiyoshi Inoue

    Inventor: Kiyoshi Inoue

    CPC classification number: B23H1/022 B23H1/024

    Abstract: An EDM (electric-discharge machining) power supply system for generating self-adaptive discharge pulses wherein an electrode is spacedly juxtaposed with a workpiece across a discharge gap while a dielectric liquid coolant is passed therethrough. The electrode and the workpiece are relatively displaced during the machining of the latter to maintain the gap spacing generally constant via a servomechanism. According to the invention, there is applied across the electrode and the workpiece a direct-current arc-striking voltage sufficient to initiate discharge across the gap while permitting the voltage to build up thereacross to a level constituting a function of conductivity characteristic of the gap and to decay with a discharge across the gap. An analog signal is derived across the gap and represents the voltage buildup and decay thereacross. Machining current flow through the gap across the electrode and the workpiece is triggered by a digital signal derived when the analog signal exceeds a threshold value and initiation of the discharge is induced by the arc-striking voltage. A second digital condition terminates the machining current flow which is controlled by a semiconductive power switch turned on and off instantaneously in dependence upon the digital conditions. A limited current high-voltage source is connected in a closed loop circuit with the electrode, the workpiece and the gap to provide the voltage buildup across the latter, while the voltage across the gap is detected by a voltage divider or the like and the output of this voltage divider is supplied via an integrating circuit in a squaring or gating-type logic device, e.g., a Schmitt trigger capable of producing the digital output for triggering the semiconductive power switch of the machining-current power supply.

    Nonvolatile memory with faulty cell registration
    147.
    发明授权
    Nonvolatile memory with faulty cell registration 失效
    具有故障单元注册的非易失性存储器

    公开(公告)号:US08503235B2

    公开(公告)日:2013-08-06

    申请号:US13298548

    申请日:2011-11-17

    CPC classification number: G11C16/349 G11C29/76 G11C29/88

    Abstract: In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.

    Abstract translation: 响应于由用于访问存储在所述非易失性半导体存储器中的多个数据块的系统接口单元接收到的读取命令,控制器对来自非易失性半导体存储器的两个存储器执行数据块的选择性读取操作 。 所述控制器还执行数据的并行操作,所述数据传输已经经过错误校正单元的错误检测和纠错操作的第一数据块经由所述系统接口单元从所述两个存储器之一传送到主机系统,并且 将要进行错误检测和纠错操作的第二数据块的数据传输从所述非易失性半导体存储器传输到两个存储器中的另一个。

    Semiconductor memory having electrically erasable and programmable semiconductor memory cells
    148.
    发明授权
    Semiconductor memory having electrically erasable and programmable semiconductor memory cells 有权
    具有电可擦除和可编程的半导体存储器单元的半导体存储器

    公开(公告)号:US08331153B2

    公开(公告)日:2012-12-11

    申请号:US13363400

    申请日:2012-02-01

    Abstract: In a nonvolatile memory apparatus, a system bus receives address, command, and/or control signals. Memory cells store bits of data by shifting a threshold voltage to one of plural ranges. In writing a first page, the threshold voltage of a first memory cell remains in a first range or shifts into a second range. In writing a second page, the threshold voltage remains in the first or second voltages, or shifts into a third range from the first range or into a fourth range from the second range. Before writing the second page, the memory reads data from the first memory cell for generating the second page writing data. A shifting direction of the threshold voltage from the first to the second range is the same as a shifting direction from the first to the third range.

    Abstract translation: 在非易失性存储装置中,系统总线接收地址,命令和/或控制信号。 存储单元通过将阈值电压移位到多个范围之一来存储数据位。 在写入第一页时,第一存储器单元的阈值电压保持在第一范围或者移位到第二范围。 在写第二页时,阈值电压保持在第一或第二电压中,或者从第二范围移动到从第一范围到第四范围的第三范围。 在写入第二页之前,存储器从第一存储器单元读取用于生成第二页写入数据的数据。 从第一到第二范围的阈值电压的移动方向与从第一到第三范围的移动方向相同。

    SEMICONDUCTOR MEMORY DEVICE HAVING FAULTY CELLS
    149.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE HAVING FAULTY CELLS 有权
    具有故障细胞的半导体存储器件

    公开(公告)号:US20100177579A1

    公开(公告)日:2010-07-15

    申请号:US12615502

    申请日:2009-11-10

    CPC classification number: G11C16/349 G11C29/76 G11C29/88

    Abstract: In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.

    Abstract translation: 响应于由用于访问存储在所述非易失性半导体存储器中的多个数据块的系统接口单元接收到的读取命令,控制器对来自非易失性半导体存储器的两个存储器执行数据块的选择性读取操作 。 所述控制器还执行数据的并行操作,所述数据传输已经经过错误校正单元的错误检测和纠错操作的第一数据块经由所述系统接口单元从所述两个存储器之一传送到主机系统,并且 将要进行错误检测和纠错操作的第二数据块的数据传输从所述非易失性半导体存储器传输到两个存储器中的另一个。

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