Quartz glass crucible for pulling silicon single crystal and its manufacturing method
    143.
    发明专利
    Quartz glass crucible for pulling silicon single crystal and its manufacturing method 有权
    QUARTZ玻璃用于拉丝硅单晶及其制造方法

    公开(公告)号:JP2009084114A

    公开(公告)日:2009-04-23

    申请号:JP2007256156

    申请日:2007-09-28

    Inventor: KISHI HIROSHI

    Abstract: PROBLEM TO BE SOLVED: To provide a quartz glass crucible which does not easily deform even during use at a high temperature without using a crystallization promoting agent, and which is easily manufactured. SOLUTION: In the quartz glass crucible used for pulling a silicon single crystal, an outer surface layer is formed by a bubble-containing quartz glass layer and an inner surface layer is formed by a quartz glass layer in which no bubble is observed with the naked eye, and an unmelted or semi-melted quartz layer (referred to as semi-melted layer) is formed on the surface of the outer surface layer, and the center line average roughness (Ra) of the semi-melted quartz layer is 50 μm to 200 μm, preferably, a layer thickness of the semi-melted quartz layer is 0.5-2.0 mm. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供即使在高温下使用时也不容易变形而不使用结晶促进剂而易于制造的石英玻璃坩埚。 解决方案:在用于拉制硅单晶的石英玻璃坩埚中,外表面层由含气泡的石英玻璃层形成,内表面层由没有观察到气泡的石英玻璃层形成 用肉眼,在外表层的表面上形成未熔融或半熔融的石英层(称为半熔融层),半熔融石英层的中心线平均粗糙度(Ra) 为50μm〜200μm,优选半熔融石英层的层厚为0.5〜2.0mm。 版权所有(C)2009,JPO&INPIT

Patent Agency Ranking