Abstract:
A method is provided for manufacturing an integrated electronic component arranged on a substrate wafer. According to the method, at least one metallization step is performed, and a value of an electrical parameter of the integrated electronic component is determined after the at least one metallization step. A subsequent metallization step is performed after determining the value of the electrical parameter. The subsequent metallization step is performed using an adjustment mask chosen from n predefined masks based on a desired value of the electrical parameter, so as to obtain the desired value of the electrical parameter of the integrated electronic component after manufacturing. In one preferred embodiment, a series of electrical tests is performed on the wafer using test equipment, and the value of the electrical parameter is determined using the same test equipment as is used to perform the series of electrical tests.
Abstract:
A process of correction of the spectral inversion for a receiver in a digital communication system: the process allows the reception in the receiver of a training sequence presumably known according to a modulation of type π/2 BPSK or MDP2. The process includes the following steps: Demodulating of the training sequence; Calculating of the differential correlation on a set of N received samples (Rn) and presumably sent (Sn) to generate a result; Using the result to detect the beginning of the frame and to order a spectral inversion in the chain of reception of the aforementioned receiver before launching the detection of the beginning of the frame. A receiver to process automatically the spectral inversion is also described.
Abstract:
A device is provided for managing the current consumption peak on each powering-up of a domain in an electronic circuit. A plurality of domains are present and a global power supply grid provides power. Each domain is selectively supplied by a local supply grid connected to the global supply grid via a plurality of commanded switch transistors. A pre-charge transistor is used to pre-charge a domain at powering-up. A command circuit controls operation of the switch transistors through an analog command signal whose slew rate is controlled to ensure that switch transistor conduction is delayed to enable the pre-charge circuit to charge the domain to a sufficient degree that activation of the switch transistor will not draw excessive current. A detection circuit is configured to compare the instant value of the supply voltage with a fixed reference supply voltage and/or to compare, with the value of a fixed command voltage, the instant value of the differential voltage between the global supply voltage and the command voltage.
Abstract:
An analog finite impulse response filter including at least one variable transconductance block having an input for receiving an input voltage and being adapted to sequentially apply each of a plurality of transconductance levels to the input voltage during at least one of a plurality of successive time periods to generate an output current at an output of the variable transconductance block, the at least one variable transconductance block including a plurality of fixed transconductance blocks each receiving the input voltage and capable of being independently activated to supply the output current; and a capacitor coupled to the output of the variable transconductance block to receive the output current and provide an output voltage of the filter.
Abstract:
An antenna generating an electromagnetic field for an electromagnetic transponder and a terminal provided with such an antenna. The antenna comprises a first inductive element designed to be connected to two terminals employing an energizing voltage, and a parallel resonant circuit coupled with the first inductive element.
Abstract:
A package for a fuel cell having an upper plate having a plurality of openings, the front surface of a cell element being intended to be received under each opening to close it, each cell element having a first pad and a second connection pad, each opening being provided with at least one crossbar connecting two sides of the opening, this crossbar having at least a conductive track portion having a first end connected to a pad of a first cell element and having a second end connected to a pad of a neighboring cell element.
Abstract:
A device for providing a digital error signal, for a timing correction loop of a digital demodulator for digital transmission by phase modulation or amplitude and phase modulation, the device successively receiving pairs of digital signals representative of the components of complex signals, and having circuitry for providing a difference signal representative of the difference between the modulus of the complex signal corresponding to the last received pair of digital signals and the modulus of the complex signal corresponding to the previously-received pair of digital signals; circuitry for providing a weighting factor which depends on the angle between the complex signal corresponding to the last received pair of digital signals and the complex signal corresponding to the previously-received pair of digital signals; and circuitry for providing the error signal proportional to the product of the difference signal and of the weighting factor.
Abstract:
A method for processing at least one wall of an opening formed in a silicon substrate, successively including the steps of implanting fluorine atoms into an upper portion of the wall of the opening, performing an oxidization step, and applying a specific processing to at least a portion of the non-implanted portion of the opening.
Abstract:
A power supply circuit and a transponder having a circuit for rectifying an A.C. voltage and two power storage elements, the rectifying circuit providing a rectified voltage to at least one of the storage elements and an output voltage being provided by at least one of the storage elements, and at least one switching element for switching the circuit operation between a state of provision of a relatively high voltage and a state of provision of a relatively low voltage, the second state configuring the rectifying circuit in halfwave operation.
Abstract:
The invention concerns a capacitor whereof one first electrode consists of a highly doped active region (D) of a semiconductor component (T) formed on one side of a surface of a semiconductor body, and whereof the second electrode consists of a conductive region (BR) coated with insulation (IL) formed beneath said active region and embedded in the semiconductor body.