公开(公告)号：US20140353144A1

公开(公告)日：2014-12-04

申请号：US14361538

申请日：2012-12-07

Applicant: Panasonic Corporation ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Shuji Nakanishi ,  Ryo Kamai ,  Yuya Suzuki ,  Kazuhito Hashimoto ,  Kazuhide Kamiya

IPC: C25B11/12 ,  C25B1/00

CPC classification number: C25B11/12 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/05 ,  C01B32/182 ,  C01B32/194 ,  C01B2204/20 ,  C01P2002/70 ,  C25B1/00 ,  C25B1/46 ,  C25B11/03 ,  H01M4/96

Abstract: A carbon-based material in accordance with the present invention includes graphene doped with metal atoms and at least one type of non-metal atoms selected from a group consisting of nitrogen atoms, boron atoms, sulfur atoms, and phosphorus atoms. A diffraction pattern obtained by X-ray diffraction measurement of the carbon-based material by use of CuKα radiation showing that a proportion of the highest of intensities of peaks derived from an inactive metal compound and a metal crystal to an intensity of a (002) peak is 0.1 or less.

Abstract translation: 根据本发明的碳基材料包括掺杂有金属原子的石墨烯和选自氮原子，硼原子，硫原子和磷原子的至少一种非金属原子。 通过使用CuKα辐射对碳系材料进行X射线衍射测定而得到的衍射图，表示从惰性金属化合物和金属结晶衍生的峰的强度的最高值的比例为（002） 峰值为0.1以下。

公开(公告)号：US20140322629A1

公开(公告)日：2014-10-30

申请号：US14361579

申请日：2012-12-07

Applicant: Panasonic Corporation ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Shuji Nakanishi ,  Kazuhito Hashimoto ,  Kazuhide Kamiya

IPC: C02F1/461 ,  H01M4/96 ,  H01M8/22

CPC classification number: C02F1/4676 ,  C02F1/46109 ,  C02F3/005 ,  C02F2001/46133 ,  C02F2101/16 ,  C02F2101/163 ,  C02F2101/166 ,  H01M4/96 ,  H01M8/22 ,  H01M8/222

Abstract: A nitrate reduction method in accordance with the present invention reduces at least one type of nitrates and nitrites in a presence of a carbon-based material containing at least one selected from a group consisting of graphite, graphene, and amorphous carbon.

Abstract translation: 根据本发明的硝酸盐还原方法在含有选自石墨，石墨烯和无定形碳的至少一种的碳基材料的存在下，还原至少一种类型的硝酸盐和亚硝酸盐。

公开(公告)号：US20140304815A1

公开(公告)日：2014-10-09

申请号：US14357956

申请日：2012-11-12

Applicant: Japan Science and Technology Agency

Inventor： Toshiyuki Maeda

IPC: G06F21/57

CPC classification number: G06F21/57 ,  G06F11/3604 ,  G06F21/566

Abstract: A program analysis/verification service provision system (1) includes: a tool registration/search section (313) for extracting, from a plurality of program analysis/verification tools (virtual machines) stored in a tool storage section (320), a virtual machine (T) in which a program analysis/verification tool for use in analysis/verification of a target program (P) has been installed and set; and a virtual machine execution environment section (120) for analyzing/verifying the target program (P) with use of the virtual machine (T) thus extracted.

Abstract translation: 程序分析/验证服务提供系统（1）包括：工具登记/搜索部分（313），用于从存储在工具存储部分（320）中的多个程序分析/验证工具（虚拟机）中提取虚拟 机器（T），其中已经安装和设置用于目标程序（P）的分析/验证的程序分析/验证工具; 以及用于使用由此提取的虚拟机（T）分析/验证目标程序（P）的虚拟机执行环境部分（120）。

公开(公告)号：US20140299172A1

公开(公告)日：2014-10-09

申请号：US14355598

申请日：2013-05-15

Applicant: Japan Science and Technology Agency

Inventor： Yoshiaki Nakamura ,  Masayuki Isogawa ,  Tomohiro Ueda ,  Jun Kikkawa ,  Akira Sakai ,  Hideo Hosono

IPC: H01L35/22 ,  H01L35/34

CPC classification number: H01L35/22 ,  H01L35/00 ,  H01L35/12 ,  H01L35/14 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34

Abstract: A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening.As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.

Abstract translation: 热电材料包括半导体衬底，形成在衬底上的半导体氧化膜和设置在氧化物膜上的热电层。 半导体氧化膜具有形成在其中的第一纳米开口。 热电层具有将半导体纳米点堆积在第一纳米开口上或上方的构造，以形成粒子堆积结构。 至少一些纳米点各自具有在其表面中形成的第二纳米开口，并且通过其晶体取向对准通过第二纳米开口彼此连接。 通过氧化衬底以在其上形成半导体氧化膜的步骤，在氧化膜中形成第一纳米开口并外延生长以在第一纳米开口上堆叠多个纳米点来制造热电材料。 结果，可以提供热电转换性能优异的热电材料。

公开(公告)号：US20140190403A1

公开(公告)日：2014-07-10

申请号：US14206558

申请日：2014-03-12

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

Abstract: A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

Abstract translation: 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。

公开(公告)号：US20140107331A1

公开(公告)日：2014-04-17

申请号：US14141052

申请日：2013-12-26

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Kenzo Fujimoto ,  Masayuki Ogino ,  Yoshinaga Yoshimura

IPC: C07H21/04 ,  C07H19/073

CPC classification number: C07H21/00 ,  C07H19/073 ,  C07H21/02 ,  C07H21/04

Abstract: The present invention provides a manufacturing method that can easily manufacture a compound known as photoresponsive (photocoupling) nucleic acids at high yield in a shorter period of time than that of the conventional technology. The present invention relates to a method of manufacturing a photoresponsive nucleic acid which includes a step of reacting a nucleic acid having groups represented by the Formula I, the Formula III, the Formula IV, or the Formula V and a compound represented by the Formula II, or reacting a nucleic acid having groups represented by the Formula VI, the Formula VIII, the Formula IX, or the Formula X and a compound represented by the Formula VII by heating them by microwaves in the presence of a metal catalyst, a basic substance, and a solvent.

Abstract translation: 本发明提供了一种制造方法，其可以在比常规技术更短的时间内以高产率容易地制造称为光响应（光耦合）核酸的化合物。 本发明涉及一种制备光响应核酸的方法，其包括使具有由式I，式III，式IV或式V表示的基团的核酸与式II表示的化合物反应的步骤 或通过在金属催化剂，碱性物质的存在下通过微波加热而使具有由式VI，式VIII，式IX或式X表示的基团的核酸和式VII表示的化合物反应 ，和溶剂。

公开(公告)号：US20140012016A1

公开(公告)日：2014-01-09

申请号：US14023726

申请日：2013-09-11

Applicant: Japan Science and Technology Agency

Inventor： Shu KOBAYASHI ,  Yasuhiro YAMASHITA ,  Kazutaka SEKI

IPC: C07F9/40 ,  C07F9/655 ,  C07F9/6553

CPC classification number: C07F9/4056 ,  B01J31/0222 ,  B01J31/0237 ,  B01J31/0251 ,  B01J31/0271 ,  B01J31/1805 ,  B01J2231/346 ,  B01J2531/20 ,  B01J2531/21 ,  B01J2531/22 ,  B01J2531/23 ,  B01J2531/24 ,  B01J2531/25 ,  C07B53/00 ,  C07B2200/07 ,  C07C251/24 ,  C07C271/22 ,  C07C2601/14 ,  C07C2603/18 ,  C07D307/52 ,  C07F9/4006 ,  C07F9/65515 ,  C07F9/655345

Abstract: Provided is an efficient technology for synthesizing diamino acids (diamino acid derivatives). Disclosed is a manufacturing method for diamino acid derivatives wherein the fluorenyl groups of the diamino acid derivative starting materials represented by General Formula [II] or [IV] are removed.

Abstract translation: 提供了合成二氨基酸（二氨基酸衍生物）的有效技术。 公开了通式[II]或[IV]表示的二氨基酸衍生物原料的芴基被除去的二氨基酸衍生物的制造方法。

公开(公告)号：US20130243347A1

公开(公告)日：2013-09-19

申请号：US13874641

申请日：2013-05-01

Applicant: National Institute of Japan Science and Technology Agency

Inventor： Hitoshi ARAI ,  Shinobu ARAI

IPC: G06T11/00

CPC classification number: G06T11/003 ,  B44F1/00 ,  G06T11/60 ,  G06T2207/10024 ,  G06T2207/20016 ,  G06T2207/20024 ,  G06T2207/20064

Abstract: The present invention obtains subband signals by performing a multiresolution decomposition by a wavelet frame with orientation selectivity or a filterbank with orientation selectivity that is a set of an approximate filter with no orientation and a plurality of detail filters with respective orientations on image data, and, when an image is reconstructed by summing the obtained subband signals, generates reconstructed image data that creates a floating illusion by attenuating or amplifying a subband signal corresponding to at least one of detail filters with a predetermined orientation relative to a floating direction, in which an image is desired to be floated due to an illusion, among the detail filters.

Abstract translation: 本发明通过利用具有取向选择性的小波帧执行多分辨率分解或具有方向选择性的滤波器组来获得子带信号，所述滤波器组是具有无取向的近似滤波器的集合，以及对图像数据具有各自取向的多个细节滤波器， 当通过对所获得的子带信号进行求和来重构图像时，通过相对于浮动方向以预定方向衰减或放大与至少一个细节滤波器相对应的子带信号来产生浮动错觉的重建图像数据，其中图像 在细节过滤器中由于错觉希望浮起。

公开(公告)号：US20130228883A1

公开(公告)日：2013-09-05

申请号：US13767290

申请日：2013-02-14

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shinji YUASA

IPC: H01L43/10

CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01F10/132 ,  H01F10/3254 ,  H01L27/11507 ,  H01L27/22 ,  H01L27/222 ,  H01L27/228 ,  H01L28/55 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

Abstract translation: 通过以下制备的样品的微细加工形成的Fe（001）/ MgO（001）/ Fe（001）MTJ器件，MRAM的输出电压增加：单晶MgO（001）衬底 准备好了 外延Fe（001）下电极（第一电极）在室温下在MgO（001）晶种层上生长，然后在超高真空下进行退火。 使用MgO电子束蒸发，在室温下在Fe（001）下电极（第一电极）上外延形成MgO（001）势垒层。 然后在室温下在MgO（001）阻挡层上形成Fe（001）上电极（第二电极）。 随后在Fe（001）上电极（第二电极）上沉积Co层。 提供Co层以增加上电极的矫顽力，以实现反平行的磁化对准。

公开(公告)号：US20130140188A1

公开(公告)日：2013-06-06

申请号：US13753656

申请日：2013-01-30

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  NIPPOH CHEMICALS CO., LTD.

Inventor： Junichi YOSHIDA ,  Seiji SUGA ,  Kazuhide KATAOKA ,  Koji MIDORIKAWA ,  Yuji HAGIWARA

IPC: C25B3/06

CPC classification number: C07C17/02 ,  C07B39/00 ,  C07C17/12 ,  C07C37/62 ,  C07C41/22 ,  C07C209/74 ,  C07C253/30 ,  C25B1/24 ,  C25B3/06 ,  C07C25/18 ,  C07C25/22 ,  C07C211/52 ,  C07C255/50 ,  C07C39/27 ,  C07C43/225

Abstract: A method of the present invention, for producing an iodizing agent, includes the step of electrolyzing iodine molecules in a solution by using an acid as a supporting electrolyte. This realizes (i) a method of producing an iodine cation suitable for use as an iodizing agent that does not require a sophisticated separation operation after iodizing reaction is completed, and (ii) an electrolyte used in the method. Further, a method of the present invention, for producing an aromatic iodine compound, includes the step of causing an iodizing agent, and an aromatic compound whose nucleus has one or more substituent groups and two or more hydrogen atoms, to react with each other under the presence of a certain ether compound. This realizes such a method of producing an aromatic iodine compound that position selectivity in iodizing reaction of an aromatic compound is improved.