Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a pattern with a small defect density.SOLUTION: The pattern forming method includes: (a) forming a film using a chemical amplification type resist composition; (b) exposing the film; and (c) developing the exposed film using a developer containing a first organic solvent. The developer has a density of particles having a particle diameter of 0.3 μm or more of 30 pieces/mL.
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method excellent in resolution such as a minimum dimension that does not allow a bridge defect to generate, roughness performance such as line edge roughness and dependence on developing time, to provide an actinic ray sensitive or radiation sensitive resin composition used for the method, and to provide a resist film.SOLUTION: A pattern forming method comprises the steps of: (a) forming a film from an actinic ray sensitive or radiation sensitive resin composition containing a compound(A) that generates an acid upon irradiation with an actinic ray or radiation and is decomposed by an action of an acid to reduce solubility in an organic solvent; (b) exposing the film; and (c) developing using a developer containing an organic solvent.
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray sensitive or radiation sensitive resin composition which can provide a pattern having improved uniformity of coating film thickness and excellent size uniformity in the wafer surface on which the pattern has been formed by liquid immersion exposure, and a pattern forming method using the composition.SOLUTION: An actinic ray-sensitive or radiation-sensitive resin composition contains: (A) a resin which has a repeating unit represented by the following general formula (A1) and increases its dissolution rate in an alkali developer by an action of an acid; (B) a compound which generates an acid by irradiation with actinic rays or radiation; and (C) a resin which comprises a repeating unit having a lactone structure substituted by a group having a fluorine atom. (In the formula, Rrepresents a hydrogen atom, an alkyl group, a fluoroalkyl group, a halogen atom or CHOH; Rrepresents an alkylene group, a cycloalkylene group or a bivalent connecting group that is formed by combining them; n represents an integer of 0-5; if n is 2 or more, a plurality of Rmay be the same or different.)
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in development defect performance, liquid immersion defect performance and limit resolution and enables to form a pattern having a good shape, and a pattern forming method using the same.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises a resin which contains a first repeating unit having a group that is decomposed by the action of an acid to thereby generate an alcoholic hydroxyl group, and which exhibits decreased solubility in a developer containing an organic solvent under the action of an acid, a compound which generates an acid upon irradiation with actinic rays or radiation, and a hydrophobic resin.
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern having high sensitivity and resolution, small line width roughness (LWR), and a superior exposure latitude (EL) and pattern form is formed, to provide a pattern formed by the pattern forming method, and to provide a chemically amplified resist composition used in the pattern forming method, and a resist film formed of the chemically amplified resist composition. SOLUTION: The pattern forming method includes: (1) a step of forming a film from a chemically amplified resist composition containing (A) a resin including a repeating unit having at least two hydroxyl groups, (B) a compound generating an acid by the irradiation with an active ray or radiation, (C) a cross-linking agent, and (D) a solvent; (2) a step of exposing the film, and (3) a step of developing by using a developing solution containing an organic solvent. A pattern is formed by the pattern forming method. The chemically amplified resist composition is used in the pattern forming method, and the resist is formed from the chemically amplified resist composition. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an active light sensitive or radiation sensitive resin composition and a method of forming a pattern using the resin composition improved in line edge roughness, BLOB defects and generation of scum, and having good conformability to an immersion liquid in immersion exposure. SOLUTION: The active light sensitive or radiation sensitive resin composition includes (A) a resin that when acted on by an acid, increases its solubility in an alkali developer, (B) a compound that when exposed to active lights or radiation, generates an acid, and (C) a resin containing at least one group selected among the following groups (x) to (z) and further containing at least either a fluorine atom or a silicon atom, in which three or more polymer chains are contained through at least one branch point, (x) an alkali-soluble group, (y) a group that when acted on by an alkali developer, is decomposed to thereby increase its solubility in the alkali developer, and (z) a group that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern having a large depth of focus (DOF), small line width roughness (LWR) and reduced bridge defects, in order to more stably form a high-accuracy fine pattern for manufacturing a highly integrated and accurate electronic device, and to provide a chemical amplification resist composition used in the method and a resist film formed from the chemical amplification resist composition. SOLUTION: The pattern forming method includes: (1) a step of forming a film from a chemical amplification resist composition; (2) a step of exposing the film; and (3) a step of developing the film by using an organic solvent-containing developer, wherein the resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a cross-linking agent; and (D) a solvent. The chemical amplification resist composition used in the method and the resist film formed from the chemical amplification resist composition are also provided. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition which enable formation of a pattern which is superior in the depth of focus (DOF) and in roughness characteristics and having few bridge defects and few chips. SOLUTION: The pattern forming method includes the steps of (A) forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition; (B) exposing the film; and (C) developing the exposed film with a developer comprising an organic solvent, wherein the composition comprises (a) a resin whose solubility in the developer decreases by the action of an acid and which has a repeating unit, in which an oxygen atom-containing group bonds to a main chain via a single bond or a divalent linking group, including neither an ester bond nor an aromatic ring group, with the content of the repeating unit in the resin being 20-100 mol%, based on all the repeating units in the resin, (b) a compound which generates acid upon irradiation with actinic rays or radiation and (d) a solvent. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition allowing formation of a pattern in which pattern collapse is suppressed, which hardly induces development failure and exhibits excellent stability with lapse of time, and also to provide a method for forming a pattern, using the composition. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition contains: (A) a resin showing an increase in a dissolution rate with an alkali developing solution by the action of an acid; (B) a compound generating an acid by irradiation with actinic rays or radiation; (C) a resin containing a repeating unit having a polarity converting group that is decomposed by the action of an alkali developing solution to increase the solubility with the alkali developing solution, and containing at least either a fluorine atom or a silicon atom; and (D) a basic compound having a pKa of not more than 9. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an active ray-sensitive or radiation-sensitive resin composition having an effect of improving a spread bottom profile of a resist pattern, with which a pattern having few pattern collapse defects is formed, and to provide a method for forming a pattern by using the composition. SOLUTION: The composition includes (A) a resin the solubility of which with an alkali developing solution is increased by an action of an acid, (B) a compound generating an acid by irradiation with active rays or radiation, and (C) a resin containing at least either a fluorine atom or a silicon atom and containing a polarity conversion group that is decomposed by an action of an alkali developing solution to increases the solubility with the alkali developing solution, wherein the resin component (A) contains a repeating unit obtained from an ester compound expressed by general formula (1). In general formula (1), A 1 represents a polymerizable functional group having a carbon-carbon double bond; A 2 represents a divalent group selected from furan-diyl, tetrahydrofuran-diyl and oxanorbornan-diyl; R 1 and R 2 each independently represent a 1C-10C straight-chain, branched or cyclic monovalent hydrocarbon group; or R 1 and R 2 may be bonded to form an aliphatic hydrocarbon ring together with carbon atoms bonding thereto; and R 3 represents a 1C-10C straight-chain, branched or cyclic monovalent hydrocarbon group which may include a hydrogen atom or a hetero atom. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation:要解决的问题:提供一种具有改善抗蚀剂图案的扩散底部轮廓的效果的活性射线敏感或辐射敏感性树脂组合物,由此形成具有很少图案塌陷缺陷的图案,并提供 通过使用该组合物形成图案的方法。 该组合物包含(A)通过酸的作用使其与碱性显影液的溶解度增加的树脂,(B)通过用活性射线或辐射照射产生酸的化合物和(C )含有至少一个氟原子或硅原子的树脂,并含有通过碱性显影液的作用分解的极性转换基团以增加与碱性显影液的溶解度,其中树脂组分(A)含有 由通式(1)表示的酯化合物得到的重复单元。 在通式(1)中,A 1 SP>表示具有碳 - 碳双键的聚合性官能团; A 2 SP>表示选自呋喃二基,四氢呋喃 - 二基和氧杂二甘醇二基的二价基团; R 1 SP>和R 2 SP>各自独立地表示1C-10C直链,支链或环状的一价烃基; 或R 1 SP>和R 2 SP>可与键合的碳原子一起形成脂族烃环; R 3表示可以包含氢原子或杂原子的1C-10C直链,支链或环状的一价烃基。 版权所有(C)2011,JPO&INPIT