公开(公告)号：WO1997023000A1

公开(公告)日：1997-06-26

申请号：PCT/IB1996001301

申请日：1996-11-26

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  SCHMITZ, Jurriaan ,  WOERLEE, Pierre, Hermanus

IPC: H01L29/78

CPC classification number: H01L29/66477 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/1079 ,  H01L29/1083

Abstract: To obtain a high mobility and a suitable threshold voltage in MOS transistors with channel dimensions in the deep sub-micron range, it is desirable to bury a strongly doped layer (or ground plane) in the channel region below a weakly doped intrinsic surface region, a few tens of nm below the surface. It was found, however, that degradation of the mobility can occur particularly in n-channel transistors owing to diffusion of boron atoms from the strongly doped layer to the surface, for example during the formation of the gate oxide. To prevent this degradation, a thin layer (11) of Si1-xGex inhibiting boron diffusion is provided between the strongly doped layer (10) and the intrinsic surface region (7), for example with x = 0.3. The SiGe layer and the intrinsic surface region may be provided epitaxially, the thickness of the SiGe layer being so small that the lattice constants in the epitaxial layers do not or substantially not differ from those in the substrate 1 in a plane parallel to the surface, while a sufficient diffusion-inhibiting effect is retained. Since SiGe has a diffusion-accelerating rather than decelerating effect on n-type dopants, the ground plane of a p-channel transistor in a CMOS embodiment is doped with As or Sb because of the low diffusion rate of these elements in pure silicon.

Abstract translation: 为了在具有深亚微米范围的沟道尺寸的MOS晶体管中获得高迁移率和合适的阈值电压，期望在弱掺杂的本征表面区域下方的沟道区域中埋设强掺杂层（或接地平面） 在表面下方几十nm。 然而，已经发现，由于硼原子从强掺杂层扩散到表面，例如在形成栅极氧化物期间，特别是在n沟道晶体管中可能发生迁移率的降低。 为了防止这种劣化，例如在x = 0.3处，在强掺杂层（10）和固有表面区域（7）之间提供抑制硼扩散的Si1-xGex薄层（11）。 可以外延地提供SiGe层和本征表面区域，SiGe层的厚度如此之小，使得外延层中的晶格常数与平行于表面的平面中的衬底1中的晶格常数没有或基本上没有不同， 同时保留足够的扩散抑制作用。 由于SiGe对n型掺杂物具有扩散加速而不是减速效应，所以CMOS实施例中的p沟道晶体管的接地层由于在纯硅中这些元素的低扩散速率掺杂有As或Sb。

公开(公告)号：WO1997022962A1

公开(公告)日：1997-06-26

申请号：PCT/IB1996001293

申请日：1996-11-25

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  KHAN, Babar, Ali ,  VAN HELLEPUTTE, Henri, R., J., R. ,  BURGMANS, Adrianus, L., J. ,  BONGAERTS, Petrus, F., G. ,  KUIJK, Karel, Elbert ,  BRUININK, Jacob

IPC: G09F09/35

CPC classification number: G02F1/13334 ,  Y10S65/04

Abstract: A flat display device, preferably of the PALC type, in which the plasma channels are formed by etching in a substrate laterally-spaced channels and bonding a thin dielectric sheet over the etched substrate. Adjoining each of the channels are shallow ledges, also formed by etching, which serve as recessed areas to receive enlarged ends serving as contact pads for each of the electrodes. Holes are formed in the thin dielectric sheet and contact material deposited on the bonded thin dielectric sheet such that the deposited material makes electrical contact with the underlying electrode contact pads and seals off the holes, which allows a plasma-forming atmosphere to be provided in the channels. This arrangement results in a glass-to-glass interface between the substrate and the thin dielectric sheet, which allows anodic bonding to be employed to assemble the two elements and thus eliminates the frit glass sealing process required in other constructions.

Abstract translation: 优选为PALC型的平面显示装置，其中等离子体通道是通过在衬底中横向隔开的通道进行蚀刻而形成的，并且在蚀刻的衬底上粘合薄的电介质片。 每个通道相邻的是浅的凸缘，其也通过蚀刻形成，其用作凹陷区域以接收用作每个电极的接触焊盘的放大端部。 孔形成在沉积在结合的薄介电片上的薄电介质片和接触材料中，使得沉积的材料与下面的电极接触焊盘电接触并密封孔，这允许在等离子体形成气氛中 通道。 这种布置导致基板和薄电介质片之间的玻璃 - 玻璃界面，其允许阳极结合用于组装两个元件，从而消除了其它结构中所需的玻璃料密封过程。

公开(公告)号：WO1997022906A1

公开(公告)日：1997-06-26

申请号：PCT/IB1996001300

申请日：1996-11-26

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  KRINGS, Leo, Hubert, Maria ,  OOMEN, Emmanuel, Wilhelmus, Johannes, Leonardus

IPC: G02F01/153

CPC classification number: H01J29/896 ,  G02F1/1523 ,  H01J2229/8926

Abstract: The electrochromic element comprises an electrochromic layer (22) whose transmission properties change when a voltage difference is applied across the element. Said electrochromic layer (22) comprises a first metal oxide of the group formed by WO3, MoO3, Nb2O5, MnO2 and ZrO2 (and combinations thereof) and a second metal oxide containing V2O5, TiO2 and/or ZnO. If the concentration of the second metal in the mixture ranges from 1 to 15 at. %, preferably from 3 to 10 at. %, the electrochromic layer (22) is transparent and colorless if no guest atoms are incorporated in the layer, and it is (color neutral) grey if a substantial concentration of guest atoms is incorporated in the layer. Electrochromic elements are provided, for example, on the outer surface of a display screen of a display device.

Abstract translation: 电致变色元件包括电致变色层（22），当跨越元件施加电压差时，其传输特性发生变化。 所述电致变色层（22）包括由WO 3，MoO 3，Nb 2 O 5，MnO 2和ZrO 2（及其组合）形成的基团的第一金属氧化物和含有V 2 O 5，TiO 2和/或ZnO的第二金属氧化物。 如果混合物中第二种金属的浓度范围为1至15at。 ％，优选为3〜10at。 ％，如果在该层中不含有客体原子，则电致变色层（22）是透明和无色的，并且如果在层中引入相当浓度的客体原子，则其为（着色中性）灰色。 电致变色元件例如设置在显示装置的显示屏的外表面上。

公开(公告)号：WO1997022184A2

公开(公告)日：1997-06-19

申请号：PCT/IB1996001379

申请日：1996-12-06

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  TRACY, Philips, Anthony

IPC: H04B01/40

CPC classification number: H04L25/028 ,  H04L5/16 ,  H04L7/0008 ,  H04L25/0292 ,  H04L25/24

Abstract: An interface device (3) is used to couple a first (101) and second (201) bi-directional signal path, such as I2C. The first bi-directional signal path (101) floats at a logic high level. Stations (110) coupled to the first signal path (101) are capable of generating a logic low level on the first signal path (101). To avoid that the system gets latched in a low state, a medium logic level is used on the first signal path (101). The interface device (3) generates the medium logic level on the first bi-directional signal path (101) in response to a low logic level on the second signal path (201). The interface device (3) generates on the second signal path (201) a low logic level in response to a low logic level on the first signal path and, otherwise, generates a high logic level. The stations (110) on the first signal path (101) detect the medium logic level and the low logic level as LOW and the high logic level as HIGH.

Abstract translation: 接口设备（3）用于耦合第一（101）和第二（201）双向信号路径，例如I2C。 第一双向信号路径（101）以逻辑高电平浮动。 耦合到第一信号路径（101）的站（110）能够在第一信号路径（101）上产生逻辑低电平。 为了避免系统锁存在低状态，在第一信号路径（101）上使用中等逻辑电平。 接口装置（3）响应于第二信号路径（201）上的低逻辑电平，在第一双向信号路径（101）上产生介质逻辑电平。 接口装置（3）响应于第一信号路径上的低逻辑电平在第二信号路径（201）上产生低逻辑电平，否则产生高逻辑电平。 第一信号路径（101）上的站（110）将介质逻辑电平和低逻辑电平检测为低电平，高逻辑电平检测为高电平。

公开(公告)号：WO1997022149A1

公开(公告)日：1997-06-19

申请号：PCT/IB1996001296

申请日：1996-11-25

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  MERCHANT, Steven, L.

IPC: H01L29/423

CPC classification number: H01L29/402 ,  H01L29/0847 ,  H01L29/0852 ,  H01L29/42368 ,  H01L29/7813 ,  H01L29/78624 ,  H01L29/861

Abstract: A lateral thin-film silicon-on-insulator (SOI) device includes a lateral semiconductor device such as a diode or MOSFET provided in a thin semiconductor film on a thin buried oxide. The lateral semiconductor device structure includes at least two semiconductor regions separated by a lateral drift region. By providing a substantially linear lateral doping profile in the lateral drift region, and by providing a conductive field plate on a linearly-graded top oxide insulating layer, a device structure is obtained in which conduction losses can be reduced without reducing breakdown voltage.

Abstract translation: 横向薄膜绝缘体上硅（SOI）器件包括半导体器件，例如二极管或MOSFET，其设置在薄的半导体膜上的薄的掩埋氧化物上。 横向半导体器件结构包括由横向漂移区域分隔开的至少两个半导体区域。 通过在横向漂移区域中提供基本线性的横向掺杂分布，并且通过在线性梯度的顶部氧化物绝缘层上提供导电场板，可以获得器件结构，其中可以降低导通损耗而不降低击穿电压。

公开(公告)号：WO1997022118A1

公开(公告)日：1997-06-19

申请号：PCT/IB1996001313

申请日：1996-11-27

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  VAN VLERKEN, Johannes, Josephus, Leonardus, Maria ,  JANSEN, Theodorus, Petrus, Henricus, Gerardus

IPC: G11B05/53

CPC classification number: G11B5/53 ,  G11B5/0086 ,  G11B5/531

Abstract: A magnetic-tape recording/reproducing device of the helical-scan type, comprising a head-drum unit having first means (5, 11) and second means (7, 13) for signal transmission between the stationary part (9) and a rotary magnetic head (8), the first means for signal transmission being adapted to transmit signals by means of an inductive coupling and the second means for signal transmission being adapted to transmit signals by means of a capacitive coupling.

Abstract translation: 一种螺旋扫描型的磁带记录/再现装置，包括具有第一装置（5,11）的头鼓单元和第二装置（7,13），用于在固定部分（9）和旋转体 磁头（8），用于信号传输的第一装置适于通过电感耦合传输信号，并且用于信号传输的第二装置适于通过电容耦合传输信号。

公开(公告)号：WO1997021306A1

公开(公告)日：1997-06-12

申请号：PCT/IB1996001279

申请日：1996-11-21

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  GEDL, Karl

IPC: H04N05/93

CPC classification number: G11B31/006 ,  G11B15/125 ,  G11B15/1875 ,  H04N5/783

Abstract: In a combination apparatus (1) comprising a video-recorder section (3) and a television-receiver section (4) in a common housing (2) and in which the video-recorder section (3) comprises a pulse generation device (55) for the generation of artificial V-pulses in a multi-speed reproduction mode and the television-receiver section (4) comprises a vertical deflection signal generation device (85), an electrical connection (86) has been provided between the pulse generation device (55) and the vertical deflection signal generation device (85) for directly applying the artificial V-pulses to the vertical deflection signal generation device (85).

Abstract translation: 在包括公共壳体（2）中的视频记录器部分（3）和电视接收机部分（4）的组合装置（1）中，视频记录器部分（3）包括脉冲产生装置（55） ），用于在多速再现模式中产生人造V脉冲，并且电视接收器部分（4）包括垂直偏转信号产生装置（85），在脉冲产生装置（85）之间提供电连接（86） （55）和用于将人造V脉冲直接施加到垂直偏转信号产生装置（85）的垂直偏转信号产生装置（85）。

公开(公告)号：WO1997021213A1

公开(公告)日：1997-06-12

申请号：PCT/IB1996001287

申请日：1996-11-22

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  HOOGENDOORN, Abraham ,  KALFS, Johannes, Jozef, Wilhelmus

IPC: G11B05/55

CPC classification number: G11B5/584 ,  G11B5/5508

Abstract: An apparatus is disclosed for positioning a head (34) relative to a plurality of tracks (T1, Tn) running parallel to each other in their longitudinal direction on a record carrier (1). First and second tracks (T1, T2) have first and second tracking signals (S1, S2) of specific frequencies recorded in them and third and fourth tracks (Tn-1, Tn) have third and fourth tracking signals (Sn-1, Sn) of specific frequencies recorded in them. The apparatus comprises a head (34) for reading the tracking signals, control signal generator means (36, 38) for generating a first control signal in response to the first and second tracking signals (S1, S2) and for generating a second control signal in response to the third and fourth tracking signals (Sn-1, Sn). A positioning unit (40, 42) for moving the head (34) in a direction transverse to said longitudinal direction, has an input for receiving said first and second control signals and for moving the head in response to said first and second control signals, so as to position the head (34) onto a fifth and sixth track (Ta, Tz) respectively. A position detection unit (48, 49, 56) for detecting the position of the head (34) in said transverse direction, has an output (58) for supplying a first and a second position signal when the head (34) is positioned onto said fifth and sixth track (Ta, Tz) respectively. In a calibration mode of operation the position of the fifth and sixth tracks are located and the generated first and second position signals are stored in a memory (60).

Abstract translation: 公开了一种用于相对于在记录载体（1）上沿其纵向彼此平行延伸的多个轨道（T1，Tn）定位头部（34）的装置。 第一和第二轨道（T1，T2）具有记录在其中的特定频率的第一和第二跟踪信号（S1，S2），第三和第四磁道（Tn-1，Tn）具有第三和第四跟踪信号（Sn-1，Sn ）其中记录的特定频率。 该装置包括用于读取跟踪信号的头部（34），用于响应于第一和第二跟踪信号（S1，S2）产生第一控制信号并用于产生第二控制信号的控制信号发生器装置（36,38） 响应于第三和第四跟踪信号（Sn-1，Sn）。 用于沿横向于所述纵向方向移动头部（34）的定位单元（40,42）具有用于接收所述第一和第二控制信号并根据所述第一和第二控制信号移动头部的输入端， 以便将头部（34）分别定位在第五和第六轨道（Ta，Tz）上。 用于检测头部（34）在所述横向上的位置的位置检测单元（48,49,56）具有用于当头部（34）定位于其上时提供第一和第二位置信号的输出端（58） 分别是第五和第六轨道（Ta，Tz）。 在校准操作模式中，定位第五和第六轨道的位置，并将生成的第一和第二位置信号存储在存储器（60）中。

公开(公告)号：WO1997021166A1

公开(公告)日：1997-06-12

申请号：PCT/IB1996001225

申请日：1996-11-14

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  GALLERY, Richard, David

IPC: G06F03/00

CPC classification number: G06F3/016 ,  G06F3/011

Abstract: A virtual body modelling apparatus and method are described, in which a user's body is modelled in a virtual environment and animated to follow physical movements of the user. Stores (30, 32) hold data defining the virtual environment as well as features of the virtual body representation, including sequences of virtual body motions (for example a walking sequence for the legs of the virtual body) which sequences are initiated in response to one or more predetermined physical movements by the user, and animated by a display generator (28) providing images of the virtual environment to the user. Various forms of feedback to the user are provided, including force feedback where the user's physical movements are constrained in dependence on conditions within the virtual environment, visual feedback where the user's viewpoint of the virtual world is modified as a sequence of body motions is executed, and audio feedback (62) such as the sound of footsteps triggered at predetermined points in the sequence of motions.

Abstract translation: 描述了虚拟身体建模装置和方法，其中用户的身体在虚拟环境中被建模并被动画以跟随用户的身体移动。 存储（30,32）保存定义虚拟环境的数据以及虚拟身体表示的特征，包括虚拟身体运动的序列（例如，虚拟身体的腿的步行顺序），该序列响应于一个 或更多的预定的物理运动，并且由向用户提供虚拟环境的图像的显示产生器（28）动画。 提供了向用户的各种形式的反馈，包括根据虚拟环境中的条件限制用户的物理运动的力反馈，其中虚拟世界的用户的视点被修改为身体运动的序列的视觉反馈被执行， 和音频反馈（62），例如在运动序列中的预定点触发的脚步声。

公开(公告)号：WO1997020783A1

公开(公告)日：1997-06-12

申请号：PCT/IB1996001281

申请日：1996-11-22

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  VAN HAL, Henricus, Albertus, Maria ,  BERNARDS, Thomas, Nicolaas, Maria ,  MUTTER, Claudia ,  VAN BOMMEL, Marcus, Jozef

IPC: C03C17/25

CPC classification number: C03C17/25 ,  C03C17/002 ,  C03C2217/228 ,  C03C2218/112 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1258 ,  C23C18/1291

Abstract: Metal-oxide layers having a high delta max, such as in particular magnesium-oxide layers, are provided on a glass substrate, such as a selection plate or a channel plate, of an electronic display device by means of a spray-pyrolisis process. To this end, a solution of a metal salt, such as Mg acetate, in ethanol or another (organic) solvent and/or water is sprayed onto a substrate which is maintained at a temperature of 350-550 DEG C. In a display device which is provided with such a layer on the bottoms and walls of the channels of the channel plate, a minimum transport voltage of 50-100 V/cm is required.

Abstract translation: 通过喷雾热解法在电子显示装置的玻璃基板（例如选择板或通道板）上设置具有高δmax的金属氧化物层，例如特别是氧化镁层。 为此，将金属盐如乙酸镁的溶液在乙醇或另一（有机）溶剂和/或水中）的溶液喷射到保持在350-550℃的温度的基板上。在显示装置 其在通道板的通道的底部和壁上设置有这样的层，需要50-100V / cm的最小输送电压。