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    Nanoelectromechanical transistors and switch systems
    155.
    发明公开
    Nanoelectromechanical transistors and switch systems 审中-公开
    纳米机电晶体管和电路系统

    公开(公告)号：EP1647522A3

    公开(公告)日：2008-07-02

    申请号：EP06000094.0

    申请日：2003-12-18

    Applicant: Ambient Systems, Inc.

    Inventor： Pinkerton, Joseph F. ,  Harlan, John C. ,  Mullen, Jeffrey, D.

    IPC: B81B3/00

    CPC classification number: G11C23/00 ,  B81B3/0021 ,  B81B2201/014 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/025 ,  G11C2213/16 ,  H01H1/0094 ,  H01H1/027 ,  Y10S977/732

    Abstract: Nanoelecttomechanical switch systems (NEMSS) that are structured around the mechanical manipulation of nanotubes are provided. Such NEMSS can realize the functionality of, for example, automatic switches, adjustable diodes, amplifiers, inverters, variable resistors, pulse position modulators (PPMs), and transistors. In one embodiment, a nanotube is anchored at one end to a base member. The nanotube is also coupled to a voltage source This voltage source creates an electric charge at the tip of the free-moving-end of the nanotube that is representative of the polarity and intensity of the voltage source. The free-moving end of this nanotnbe can be electrically controlled by applying an electric charge to a nearby charge member layer that is either of the same (repelling) or opposite (attracting) polarity of the nanotube. A contact layer is then placed in the proximity of the free-moving end of the nanotube such that when a particular electric charge is placed on the nanotube, the nanotube electrically couples the contact layer.

    Nanoelectromechanical transistors and switch systems
    157.
    发明公开
    Nanoelectromechanical transistors and switch systems 审中-公开
    Nanoelektromechanische Transistoren und Schaltungssysteme

    公开(公告)号：EP1647522A2

    公开(公告)日：2006-04-19

    申请号：EP06000094.0

    申请日：2003-12-18

    Applicant: Ambient Systems, Inc.

    Inventor： Pinkerton, Joseph F. ,  Harlan, John C. ,  Mullen, Jeffrey, D.

    IPC: B81B3/00

    CPC classification number: G11C23/00 ,  B81B3/0021 ,  B81B2201/014 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/025 ,  G11C2213/16 ,  H01H1/0094 ,  H01H1/027 ,  Y10S977/732

    Abstract: Nanoelecttomechanical switch systems (NEMSS) that are structured around the mechanical manipulation of nanotubes are provided. Such NEMSS can realize the functionality of, for example, automatic switches, adjustable diodes, amplifiers, inverters, variable resistors, pulse position modulators (PPMs), and transistors. In one embodiment, a nanotube is anchored at one end to a base member. The nanotube is also coupled to a voltage source This voltage source creates an electric charge at the tip of the free-moving-end of the nanotube that is representative of the polarity and intensity of the voltage source. The free-moving end of this nanotnbe can be electrically controlled by applying an electric charge to a nearby charge member layer that is either of the same (repelling) or opposite (attracting) polarity of the nanotube. A contact layer is then placed in the proximity of the free-moving end of the nanotube such that when a particular electric charge is placed on the nanotube, the nanotube electrically couples the contact layer.

    Abstract translation: 提供了围绕纳米管的机械操作构建的纳米机电开关系统（NEMSS）。 这样的NEMSS可以实现例如自动开关，可调二极管，放大器，反相器，可变电阻器，脉冲位置调制器（PPM）和晶体管的功能。 在一个实施例中，纳米管在一端锚固到基底构件。 纳米管还耦合到电压源。该电压源在纳米管的自由移动端的尖端处产生代表电压源的极性和强度的电荷。 该纳米管的自由移动端可以通过将电荷施加到与纳米管相同（排斥）或相反（吸引））极性的附近电荷元件层来进行电控制。 然后将接触层放置在纳米管的自由移动端附近，使得当在纳米管上放置特定的电荷时，纳米管电耦合接触层。

    RF Mems switch and fabrication method thereof
    158.
    发明公开
    RF Mems switch and fabrication method thereof 审中-公开
    RF MEMS Schalter undzugehörigesHerstellungsverfahren

    公开(公告)号：EP1555713A1

    公开(公告)日：2005-07-20

    申请号：EP05000879.6

    申请日：2005-01-18

    Applicant: LG ELECTRONICS INC.

    Inventor： Park, Jae-Yeong ,  Lee, Hee-Chul

    IPC: H01P1/12

    CPC classification number: B81B7/007 ,  B81B2201/014 ,  B81C2203/0118 ,  H01G5/16 ,  H01G5/40 ,  H01H1/0036 ,  H01H2057/006 ,  H01P1/127 ,  Y10T29/42 ,  Y10T29/49105 ,  Y10T29/49117

    Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. The RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate is formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

    Abstract translation: 公开了一种RF MEMS开关及其制造方法。 通过使用当将电场施加到压电电容器时由电能转换为机械能而致动的压电电容器，RF MEMS开关由低电压和低功率功率致动。 通过使用蚀刻方法，化学机械抛光法，电镀法等形成盖基板，并且RF MEMS开关具有高可靠性和高产量。

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