Abstract:
An apparatus includes an interface circuit coupled to an electronic device. The interface circuit provides source synchronous communication with the electronic device using a strobe signal. The interface circuit is configured to gate the strobe signal in order to successfully communicate with the electronic device.
Abstract:
An apparatus for adjustment of a digital delay function of a data memory unit comprising said data memory unit (102), an elastic store register, ESR, (104) and read clock and write clock adapted to control read and write operations, a write counter associated with the write clock and a read counter associated with the read clock. Said memory (102) works in series with said ESR (104). The memory (102) delivers two data elements from two logically neighbouring cells. Said ESR (104) writes the two data elements from the memory (102) at every cycle of the write clock, wherein if the write counter is increased by one at a cycle of the write clock the output position in the memory (102) is not changed, and if the write counter is increased by two at one cycle of the write clock the output position in the memory (102) is moved backward by one data element and if the write counter is not changed at one cycle of the write clock the output position in the memory (102) is moved forward by one data element.
Abstract:
Selecting circuits for columns of an array of memory cells are used to hold read data or write data of the memory cells. The memory cells may be multistate memory cells. There is a shift register chain, having a stage for columns of the array. A strobe pulse is shifted through this shift register. The strobe points, with each clock, at and enables a different selecting circuit in sequence. That particular selecting circuit that has been enabled by the strobe will then perform a certain function. In a read mode, the selected selecting circuit will send the stored information through to the output buffer for output from the integrated circuit. And while in a programming mode, the selected selecting circuit will receive data from an input buffer. This data will be written into a memory cell.
Abstract:
A non-volatile memory device capable of reading and writing a large number of memory cells in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. In one aspect, data latches associated with the multiple read/write circuits are I/O enabled and coupled in a compact manner for storage and serial transfer. They are implemented by one or more chain of link modules, which can selectively behave as inverters or latches. A method enables the use of a minimum number of link modules by cycling data between a set of master link modules and a substantially smaller set of slave link modules.
Abstract:
A memory device for storing and outputting information includes a plurality of memory matrices, each memory matrix containing a plurality of transistors having a drain, a source, and a gate and the plurality of transistors are arranged in a plurality of levels that proceed from a lowest to a highest level. A plurality of single bit shift registers is also provided for producing a serial output, each shift register having a memory input and an associated memory matrix, wherein the memory input of each shift register is electrically connected to the sources of the transistors in the highest level of the shift register's associated memory matrix. A plurality of address lines for receiving a decode signal function, a load signal, and a clock as well as an output line for transmitting the serial output of the plurality of shift registers is also provided. Embodiments of the invention may employ any number of shift registers and memory matrices independent of the number of available address lines.
Abstract:
A multiple serial access memory is provided. A dynamic random access memory (30) is addressed to input data thereto and output data therefrom. Rows of data are output from the array (50) in response to address signals (34, 36, 38) provided thereto. A plurality of serial output ports (44, 46, 48) is coupled to the output of the array for selectively latching different rows of data output from the array. The serial output ports (44, 46, 48) are clocked to output the latched data therefrom. In an illustrated embodiment, each of the serial output ports contains a shift register (62, 64, 66, ... 68) having a length equal to the width of the memory array (30). The shift register is responsive to a first timing signal (42, 52) for latching a row of data from the array (30). A second timing signal actuates the shift register to shift a row of latched data. A serial access selector (70) coupled to the shift register outputs a selected portion of the shifted data from the serial output port. The memory has particular application as the frame store for a motion compensated interframe image coding/decoding system.
Abstract:
A video memory, for use with a video tape recorder, a television receiver of the like to process a picture, is simplified and can achieve the functions of a time base corrector, a noise reduced and a comb filter, so as to considerably improve the quality of a video picture. A frequency converting circuit for use with the video memory includes a comparator (30) for comparing first and second address signals and an address correction circuit (38) connected to receive an output signal from the comparator (30). When a crossing occurs between the first and second address signals, the sequential order in which an address signal is supplied to the memory (12) is switched by the address correcting circuit (38), to thereby derive a continuous output signal from the memory (12).