Abstract:
There is described a device for the correction of the power factor in forced switching power supplies. The device comprises a converter (20) and a control device (100) coupled with the converter (20) in order to obtain from an alternated mains input voltage (Vin) a regulated voltage (Vout) on the output terminal; the converter (20) comprises a power transistor (M) and said control device (100) comprises an error amplifier (3) having in input on the inverting terminal a signal (Vr) proportional to the regulated voltage (Vout) and on the non-inverting terminal a reference voltage (Vref). The signal (Vr) proportional to the regulated voltage is produced by a first resistance (R1) and a second resistance (R2) coupled in series to which is applied said regulated voltage (Vout); a terminal of the second resistance (R2) is connected with the inverting terminal of the error amplifier (3). The device for the correction of the power factor comprises first means (D50) positioned between the first resistance (RI) and the inverting terminal of the error amplifier (3) and second means (50) suitable for detecting the electrical connection of the first means (D50) with the output terminal of said device for the correction of the power factor and suitable for detecting an output signal (Vr2) of the second resistance (R2). The second means (50) are suitable for supplying a malfunction signal (Fault) of the device for the correction of the power factor when the second means (50) detect electric disconnection of the first means (D50) from said output terminal (Out) or when the output signal (Vr2) of the second resistance (R2) tends to zero.
Abstract:
In order to perform, according to a received signal (r), a channel-estimation procedure and a cell-search procedure in cellular communication systems, there are executed at least one first operation of correlation of said received signal (r) with secondary synchronization codes (SSC) and a second operation of correlation of said received signal (r) with known midamble codes (mid, MPL, MPS), whilst said channel-estimation procedure comprises a third operation of correlation of at least part of said received signal (r) with known midamble codes (mid, MPL, MPS), said first, second, and third correlation operation being executed by sending at least part (e mídamble )of said received signal (r) to an input of a correlation bank (111, 151; 203, 253; 303). There are envisaged the operations of: - sending, in a first time interval, the received signal (r) to said correlation bank (303) for executing the first operation of correlation of said received signal (r) with secondary synchronization codes (SSC); - sending, in a second time interval, at least part (e mídamble ) of said received signal (r) to said same correlation bank (303) for executing the second operation of correlation of said received signal (r) with known midamble codes (mid, MPL, MPS); - sending, in a second time interval, the received signal (r) to said same correlation bank (303) for executing the third operation of correlation of at least part (e midamble ) of said received signal (r) with known midamble codes (mid, MPL, MPS). Preferential application is in mobile communication systems based upon standards such as UMTS, CDMA2000, IS95 or WBCDMA.
Abstract:
The present invention describes a system for driving rows of a liquid crystal display comprising at least one module (10) for driving one single row of the liquid crystal display. The module comprises an inverter (T11-T12) operating in a supply path between a first (21) and a second (22) supply line of the system, where the first supply line (21) comprises first means (S1) capable of connecting it to a first (VLCD) or to a second (VA) supply voltage and the second supply line (22) comprises second means (S2) capable of connecting it to a third (VB) or to a fourth (VSS) supply voltage. The inverter (T11-T12) is driven by a logic circuitry (11-12) and sends in output (OUT) a drive signal for one single row of the liquid crystal display.
Abstract:
The present invention refers to a system for driving columns of a liquid crystal display comprising a logic circuitry (10) operating in a supply path between a first (VDD) and a second (VSS) supply voltage in which the first supply voltage is (VDD) higher than the second supply voltage (VSS). The logic circuitry (10) is capable of generating starting from the first logic signals (LOW_FRAME, WHITE_PIX) in input second logic signals (CP, CN, CP_N, CN_N) in output whose value is equal to the first (VDD) or second (VSS) supply voltage. The device comprises two elevator devices (11, 12) coupled to the logic circuitry (10) and operating in a supply path between a third supply voltage (VLCD) greater than the first supply voltage (VDD) and the second supply voltage (VSS); the elevator devices (11, 12) are capable of raising the value of the second logic signals (CP, CN, CP_N, CN_N). The device also comprises a first (T11-T12) and a second (T13-T14) pair of transistors shaving different supply paths (VLCD-VA, VB-VSS) and having an output terminal (OUT) in common; the first (T11-T12) and the second (T13-T14) pair of transistors are connected to the elevator devices (11, 12) so as to determine the drive signal of a column. The device comprises turnoff circuitry (15) operating in a supply path between the third (VLCD) and the second supply voltage (VSS) and coupled to the two elevator devices (11, 12). The circuitry (15) is capable of keeping one of the two pairs of transistors (T11-T12, T13-T14) in a turnoff state in the period of time of a frame when the other of the two pairs of transistors (T11-T12, T13-T14) is in operative conditions.
Abstract:
An integrated device having: a first conductive region (6A); a second conductive region (11A); an insulating layer (9) arranged between the first and the second conductive region; at least one through opening (36) extending in said insulating layer (9) between the first and the second conductive region; and a contact structure (10A) formed in the through opening and electrically connecting the first conductive region (6A) and the second conductive region (11B). The contact structure (10A) is formed by a conductive material layer (30) that coats the side surface and the bottom of the through opening (36) and surrounds an empty region (35) which is closed at the top by the second conductive region (11A). The conductive material layer (30) preferably comprises a titanium layer (31) and a titanium-nitride layer (32) arranged on top of one another.
Abstract:
A method includes compiling, by a compiler (305) of a Smart Secure Platform (SSP) supporting a Primary Platform (105) and a Secondary Platform, source code comprising an implementation of an operating system of the Secondary Platform and applications of the Secondary Platform, to produce compiled source code compatible by an operating system of the Primary Platform (105); linking, by the compiler (305), personalization data to the compiled source code to produce a native Secondary Platform Bundle (SPB) compatible with the Primary Platform (105), the personalization data being associated with a subscription of a user of the SSP; and delivering, by the compiler, the native SPB.
Abstract:
An integrated electronic device, delimited by a first surface (S 1 ) and by a second surface (S 2 ) and including: a body (2) made of semiconductor material, formed inside which is at least one optoelectronic component chosen between a detector (30) and an emitter (130); and an optical path (OP), which is at least in part of a guided type and extends between the first surface and the second surface, the optical path traversing the body. The optoelectronic component is optically coupled, through the optical path, to a first portion of free space and a second portion of free space, which are arranged, respectively, above and underneath the first and second surfaces.
Abstract:
A vertical-conduction electronic device (100; 150), comprising: a semiconductor wafer (1) including a semiconductor layer (2, 3) having a first side (3a), a first type of conductivity (N), and a first doping level; a first body region (32) and a second body region (34), which have a second type of conductivity (P) and extend in the semiconductor layer (2, 3); an enriched region (12), having the first type of conductivity and a second doping " level higher than the first doping level, which extends in the semiconductor layer facing the first side (3a), between the first and second body regions (32, 34); a dielectric filling region (20), which extends in the semiconductor layer, facing the first side (3a), and completely surrounded by the enriched region (12); and a gate structure (29), which extends on the first side (3a) on the enriched region (12), on the dielectric filling region (20), on part of the first body region (32), and on part of the second body region (34).
Abstract:
A vertical-conduction electronic device (100; 150), comprising: a semiconductor wafer (1) including a semiconductor layer (2, 3) having a first side (3a), a first type of conductivity (N), and a first doping level; a first body region (32) and a second body region (34), which have a second type of conductivity (P) and extend in the semiconductor layer (2, 3); an enriched region (12), having the first type of conductivity and a second doping " level higher than the first doping level, which extends in the semiconductor layer facing the first side (3a), between the first and second body regions (32, 34); a dielectric filling region (20), which extends in the semiconductor layer, facing the first side (3a), and completely surrounded by the enriched region (12); and a gate structure (29), which extends on the first side (3a) on the enriched region (12), on the dielectric filling region (20), on part of the first body region (32), and on part of the second body region (34).
Abstract:
A base (2) carries a first chip (3) and a second chip (4) oriented differently with respect to the base and packaged in a package (6). Each chip integrates an antenna and a magnetic via (13). A magnetic coupling path connects the chips, forming a magnetic circuit that enables transfer of signals and power between the chips (3, 4) even if the magnetic path is interrupted, and is formed by a first stretch (5c) coupled between the first magnetic-coupling element (13) of the first chip and the first magnetic-coupling element (12) of the second chip, and a second stretch (5f) coupled between the second magnetic-coupling element (12) of the first chip and the second magnetic-coupling element (13) of the second chip. The first stretch has a parallel portion (5c1, 5c3) extending parallel to the faces (2a, 2b) of the base. The first and second stretches have respective transverse portions (5i1, 5i2) extending on the main surfaces of the second chip, transverse to the parallel portion.