公开(公告)号：WO2016069488A3

公开(公告)日：2016-05-06

申请号：PCT/US2015/057404

申请日：2015-10-26

Applicant: SUNEDISON, INC. ,  CHERUKUPALLI, Nagendra Srinivas

Inventor： CHERUKUPALLI, Nagendra Srinivas ,  PRAKASH, Marath ,  MAPATI, Anurag ,  MALAPAREDDY, Bharat ,  RAMASAMY, Selvam ,  NARAYANAN, Manickam ,  MANAPAT, Rajesh

IPC: F24J2/52

Abstract: Clamping assemblies for securing (202) a solar module (100) to a structure include a base(212), a bracket(214), and a fastener(215). The base may be attached to a multi-planar roof of the structure. The base and the bracket together define a mounting region for receiving a portion of the solar module. The fastener connects the base and the bracket and can selectively apply a clamping force to the portion of the solar module.

Abstract translation: 用于将太阳能模块（100）固定（202）到结构的夹紧组件包括基座（212），支架（214）和紧固件（215）。 基座可以连接到结构的多平面屋顶上。 基部和支架一起限定用于接收太阳能模块的一部分的安装区域。 紧固件连接底座和支架，并可选择性地将夹持力施加到太阳能模块的部分。

公开(公告)号：WO2016014805A1

公开(公告)日：2016-01-28

申请号：PCT/US2015/041748

申请日：2015-07-23

Applicant: SUNEDISON, INC.

Inventor： SWAMINATHAN, Tirumani N. ,  KORB, Harold W.

IPC: C30B15/02 ,  C30B15/12 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B15/22 ,  C30B15/02 ,  C30B15/12 ,  C30B15/20 ,  C30B29/06

Abstract: A method for growing a crystal ingot from a melt in a crystal growing system is provided. The system includes a crucible and a barrier disposed within the crucible. The method includes identifying a Peclet number ( Pe ) with an advective transport rate that is less than a diffusive transport rate, calculating a cross-sectional area of a passage to be formed in the barrier based on the identified Peclet number to allow outward diffusion of impurities through the passage during growth of the crystal ingot, and growing the crystal ingot using the barrier having the passage formed therein.

Abstract translation: 提供了一种在晶体生长系统中从熔体生长晶锭的方法。 该系统包括设置在坩埚内的坩埚和屏障。 该方法包括以小于扩散传输速率的平流传输速率来识别佩佩莱数（Pe），基于所识别的佩佩克数来计算要在屏障中形成的通道的横截面积，以允许向外扩散 通过晶体生长期间的通道产生杂质，并且使用其中形成通道的阻挡层生长晶锭。

公开(公告)号：WO2015084602A1

公开(公告)日：2015-06-11

申请号：PCT/US2014/066681

申请日：2014-11-20

Applicant: SUNEDISON, INC.

Inventor： SWAMINATHAN, Tirumani N. ,  HILKER, John David ,  ZEPEDA, Salvador

IPC: C30B15/10 ,  C30B15/12 ,  C30B29/06 ,  C30B15/02

CPC classification number: C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  C30B29/06 ,  Y10T117/1052

Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.

Abstract translation: 用于从熔体生长锭的系统包括外坩埚，内坩埚和堰。 外坩埚包括第一侧壁和第一基座。 第一侧壁和第一基座限定用于容纳熔体的外部空腔。 内坩埚位于外腔内，并具有中心纵轴。 内坩埚包括第二侧壁和在其中具有开口的第二基部。 第二基座中的开口与中心纵向轴线同心。 堰体设置在外坩埚和用于支撑内坩埚的内坩埚之间。

公开(公告)号：WO2014152852A3

公开(公告)日：2014-11-06

申请号：PCT/US2014027981

申请日：2014-03-14

Applicant: SUNEDISON INC

Inventor： KIMBEL STEVEN L ,  FERGUSON STEVE J ,  SWAMINATHAN TIRUMANI N ,  ZEPEDA SALVADOR ,  HILKER JOHN DAVID ,  HOLZER JOSEPH C ,  MEYER BENJAMIN M ,  HOLDER JOHN D

IPC: C30B15/12 ,  C30B29/06

CPC classification number: C30B15/12 ,  C30B29/06

Abstract: A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a first cavity. The second crucible is disposed within the first cavity of the first crucible, and has a second base and a second sidewall that form a second cavity. The second base has a bottom surface that is shaped to allow the second base to rest against the top surface of the first base. The second crucible includes a crucible passageway to allow movement of the melt therethrough. The weir is disposed inward from the second sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir.

Abstract translation: 用于从熔体生长晶锭的系统包括第一坩埚，第二坩埚和堰。 第一坩埚具有形成第一腔的具有顶表面的第一基座和第一侧壁。 第二坩埚设置在第一坩埚的第一腔内，并且具有形成第二腔的第二基底和第二侧壁。 第二基座具有底部表面，其被成形为允许第二基座抵靠第一基座的顶表面。 第二坩埚包括坩埚通道以允许熔体通过其移动。 堰从第二侧壁向内设置，以阻止熔体从堰外的位置移动到堰的内侧。

公开(公告)号：WO2014163973A1

公开(公告)日：2014-10-09

申请号：PCT/US2014/019489

申请日：2014-02-28

Applicant: SUNEDISON, INC.

Inventor： YUN, Seok-Min ,  PARK, Seong-Su ,  KIM, Se-Myung ,  CHOI, Won-Jin ,  YOON, Woo-Jin

IPC: B07B4/00 ,  C01B33/037

CPC classification number: B07B4/00 ,  B07B4/02 ,  B07B11/06 ,  C01B33/02 ,  C01B33/021 ,  Y10S209/908 ,  Y10S209/932

Abstract: A method of removing dust from granular polysilicon includes introducing a stream of granular polysilicon, dispersing the longitudinal stream of granular polysilicon by redirecting the stream into a radially outward flow having a circular pattern, and introducing a counter flow of gas in an opposite direction to that of the longitudinal stream of granular polysilicon to contact the radially outward flow to separate the dust from the granular polysilicon.

Abstract translation: 从颗粒状多晶硅去除灰尘的方法包括引入粒状多晶硅流，通过将流引导到具有圆形图案的径向向外的流中将颗粒状多晶硅的纵向流分散，并将反向的气流引导到相反方向 的颗粒多晶硅的纵向流接触径向向外的流动以分离来自粒状多晶硅的灰尘。

公开(公告)号：WO2014159879A1

公开(公告)日：2014-10-02

申请号：PCT/US2014/025388

申请日：2014-03-13

Applicant: SUNEDISON, INC.

Inventor： SWAMINATHAN, Tirumani N. ,  ZEPEDA, Salvador ,  HILKER, John David

IPC: C30B15/12 ,  C30B29/06

CPC classification number: C30B15/12 ,  C30B15/002 ,  C30B29/06 ,  Y10T117/1052

Abstract: A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.

Abstract translation: 用于从熔体生长锭的系统包括第一坩埚，第二坩埚和堰。 第一坩埚具有形成用于容纳熔体的外腔的第一基底和第一侧壁。 堰从第一侧壁向内位于第一基座的顶部，以防止熔体从堰外的位置移动到堰的内侧。 第二坩埚的尺寸适于放置在外腔内，并具有形成内腔的第二底座和第二侧壁。 还公开了相关方法。

公开(公告)号：WO2014106190A2

公开(公告)日：2014-07-03

申请号：PCT/US2013/078329

申请日：2013-12-30

Applicant: SUNEDISON, INC.

Inventor： FALSTER, Robert, J. ,  VORONKOV, Vladimir, V. ,  PITNEY, John, A. ,  ALBRECHT, Peter, D.

IPC: H01L21/687

CPC classification number: H01L21/322 ,  C30B25/12 ,  H01L21/302 ,  H01L21/68735 ,  H01L21/6875

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract translation: 用于制备具有降低的缺陷浓度的异质结构的装置，包括用于对半导体衬底施加应力以使其符合具有不同晶格常数的晶体的装置。

公开(公告)号：WO2014100487A2

公开(公告)日：2014-06-26

申请号：PCT/US2013/076708

申请日：2013-12-19

Applicant: SUNEDISON, INC.

Inventor： PHILLIPS, Richard J. ,  RATHOD, Shailendra B.

IPC: C03C27/06

CPC classification number: C30B15/12 ,  C03B23/20 ,  C03C27/06 ,  C03C2217/213 ,  C30B15/002 ,  C30B15/20 ,  C30B29/06 ,  Y10T117/1052

Abstract: A method of bonding a first silica part to a second silica part includes coating contacting surfaces of the first and second silica parts with a solution having one of silica and silica precursors. The coated surfaces of the first silica part are placed adjacent to the coated surfaces of the second silica part to form an assembly, and the assembly is heated.

Abstract translation: 将第一二氧化硅部分结合到第二二氧化硅部分的方法包括第一和第二二氧化硅部分的涂层接触表面与具有二氧化硅和二氧化硅前体之一的溶液。 第一二氧化硅部分的涂覆表面被放置成与第二二氧化硅部分的涂覆表面相邻以形成组件，并且组件被加热。

公开(公告)号：WO2014063017A1

公开(公告)日：2014-04-24

申请号：PCT/US2013/065624

申请日：2013-10-18

Applicant: SUNEDISON, INC.

Inventor： CHEW, Jia Wei ,  BHUSARAPU, Satish ,  WEATHERFORD, Keith

IPC: B01J8/18

CPC classification number: B01J8/1809 ,  B01J2208/00539

Abstract: A method and apparatus for determining the fluidization quality of a fluidized bed reactor is disclosed. The method includes measuring pressure within the fluidized bed reactor to obtain a pressure signal. The pressure signal is then transformed using wavelet decomposition into higher-frequency details and lower-frequency approximations. The dominance of the various features is then calculated based on the energy of each feature in relation to the normalized wavelet energies. The fluidization quality of the fluidized bed reactor is then determined from a comparison over time of the calculated energies.

Abstract translation: 公开了一种用于确定流化床反应器的流化质量的方法和装置。 该方法包括测量流化床反应器内的压力以获得压力信号。 然后将压力信号通过小波分解转换成更高频率的细节和较低频率的近似值。 然后基于每个特征相对于归一化小波能量的能量来计算各种特征的优势。 然后根据计算能量随时间的比较确定流化床反应器的流化质量。