公开(公告)号：KR1020140022131A

公开(公告)日：2014-02-24

申请号：KR1020120088172

申请日：2012-08-13

Applicant: 삼성전자주식회사

Inventor： 이재훈

IPC: H01L21/18 ,  H01L21/20

Abstract: The present invention relates to a preparing method for a light emitting device module and a nitride based semiconductor device using the same. According to the present invention, a growth substrate where a nitride based semiconductor layer is grown is removed by a laser lift off process. A sacrificial layer is removed by a wet etching process. Therefore, surface roughness and planarization can be improved. The property of the nitride based semiconductor device can be improved by reducing contact resistance and preventing leakage current or driving voltage error.

Abstract translation: 本发明涉及发光器件模块的制备方法和使用其的氮化物基半导体器件。 根据本发明，通过激光剥离工艺除去生长氮化物基半导体层的生长衬底。 通过湿蚀刻工艺去除牺牲层。 因此，可以提高表面粗糙度和平坦化。 可以通过降低接触电阻和防止漏电流或驱动电压误差来改善氮化物基半导体器件的性能。

公开(公告)号：KR1020140012445A

公开(公告)日：2014-02-03

申请号：KR1020120079360

申请日：2012-07-20

Applicant: 삼성전자주식회사

Inventor： 이재훈

IPC: H01L29/737

CPC classification number: H01L29/267 ,  H01L21/0237 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02529 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/26 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

Abstract: According to one embodiment of the present invention, a nitride based semiconductor device includes an undoped GaN layer formed on an AlGaN layer and a SixC1-xN function layer formed on the undoped GaN layer. The surface roughness of AlGaN layer is improved and the combination of O and Al in the surface of the AlGaN layer is prevented. Thereby, surface leakage current can be reduced.

Abstract translation: 根据本发明的一个实施例，氮化物基半导体器件包括在AlGaN层上形成的未掺杂的GaN层和形成在未掺杂的GaN层上的SixC1-xN功能层。 改善了AlGaN层的表面粗糙度，并且防止了AlGaN层表面中的O和Al的组合。 由此，可以降低表面泄漏电流。

公开(公告)号：KR1020130076314A

公开(公告)日：2013-07-08

申请号：KR1020110144859

申请日：2011-12-28

Applicant: 삼성전자주식회사

Inventor： 이재훈 ,  김기세

IPC: H01L29/872 ,  H01L29/737

CPC classification number: H01L29/78 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66477 ,  H01L29/872

Abstract: PURPOSE: A power device and a method for manufacturing the same are provided to reduce leakage current by forming a regrowth GaN layer in a silicon carbide layer. CONSTITUTION: A silicon carbide layer (210) is formed on one surface of a substrate. A part of the silicon carbide layer is etched. A regrowth GaN layer is grown on an etched part. A first electrode (400) is formed on the silicon carbide layer. A second electrode (500) is formed on the other surface of the substrate.

Abstract translation: 目的：提供一种功率器件及其制造方法，以通过在碳化硅层中形成再生长GaN层来减少泄漏电流。 构成：在基板的一个表面上形成碳化硅层（210）。 蚀刻碳化硅层的一部分。 再生长的GaN层在蚀刻部分上生长。 第一电极（400）形成在碳化硅层上。 在基板的另一个表面上形成第二电极（500）。

公开(公告)号：KR1020130014850A

公开(公告)日：2013-02-12

申请号：KR1020110076559

申请日：2011-08-01

Applicant: 삼성전자주식회사

Inventor： 이재훈 ,  김기세 ,  이정희 ,  임기식 ,  김동석

IPC: H01L21/335 ,  H01L29/772

CPC classification number: H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/2003

Abstract: PURPOSE: A method for manufacturing a power device is provided to improve a withstand voltage by forming a depletion layer on a p-n interface in a p-n junction with a superjunction structure formed by alternatively arranging a first drift region and a second drift region. CONSTITUTION: A first drift region(200) is formed on a substrate(100). A trench is formed by patterning the first drift region. A second drift region(400) is formed by growing n-GaN in a trench. A source electrode contact layer(700) is formed on the second drift region. A source electrode(920) and a gate electrode(910) are formed on the source electrode contact layer. A drain electrode(930) is formed on one side of the substrate opposite to the first drift region.

Abstract translation: 目的：提供一种用于制造功率器件的方法，以通过在与通过交替布置第一漂移区域和第二漂移区域形成的超结构结构的p-n结中的p-n界面上形成耗尽层来提高耐受电压。 构成：在衬底（100）上形成第一漂移区（200）。 通过图案化第一漂移区域形成沟槽。 通过在沟槽中生长n-GaN形成第二漂移区（400）。 源电极接触层（700）形成在第二漂移区上。 源极电极（920）和栅电极（910）形成在源电极接触层上。 漏极电极（930）形成在与第一漂移区域相对的基板的一侧上。

公开(公告)号：KR1020130014849A

公开(公告)日：2013-02-12

申请号：KR1020110076558

申请日：2011-08-01

Applicant: 삼성전자주식회사

Inventor： 이재훈

IPC: H01L29/872

CPC classification number: H01L29/872 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/8611

Abstract: PURPOSE: A schottky barrier diode and a manufacturing method thereof are provided to reduce manufacturing costs and to simplify manufacturing processes by not requiring an additional ion implantation process and a heat treatment process. CONSTITUTION: A buffer layer(200) is formed on a substrate(100). An n-GaN layer(300) doped with aluminum is formed on the buffer layer. A GaN layer(400) doped with aluminum is formed on the n-GaN layer doped with aluminum. A first electrode(700) is formed on the GaN layer doped with aluminum. A second electrode(600) is formed on the other side of the substrate with the n-GaN layer doped with aluminum.

Abstract translation: 目的：提供肖特基势垒二极管及其制造方法以降低制造成本，并且通过不需要额外的离子注入工艺和热处理工艺来简化制造工艺。 构成：在衬底（100）上形成缓冲层（200）。 在缓冲层上形成掺杂有铝的n-GaN层（300）。 在掺杂有铝的n-GaN层上形成掺杂有铝的GaN层（400）。 在掺杂有铝的GaN层上形成第一电极（700）。 第二电极（600）形成在衬底的另一侧，其中掺杂有铝的n-GaN层。

公开(公告)号：KR1020120125789A

公开(公告)日：2012-11-19

申请号：KR1020110043440

申请日：2011-05-09

Applicant: 삼성전자주식회사

Inventor： 이재훈 ,  김기세

IPC: H01L29/778 ,  H01L21/335 ,  H01L29/737

CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/66462

Abstract: PURPOSE: A gallium nitride based semiconductor device and a manufacturing method thereof are provided to simplify process and to enhance reproducibility by omitting a recess process by selectively arranging a gallium face polarity area and a nitride face polarity area before making a gallium nitride based semiconductor layer growth. CONSTITUTION: A polarity selection layer(20) is placed on a substrate(10). A plurality of gallium nitride semiconductor layers is placed on the polarity selection layer. A source(S) is placed on the plurality of gallium nitride semiconductor layers. A gate(G) and a drain(D) are placed on the plurality of gallium nitride semiconductor layers. A gate corresponding area of the plurality of gallium nitride semiconductor layers comprises a nitride face polarity area.

Abstract translation: 目的：提供一种氮化镓基半导体器件及其制造方法，以在制造氮化镓基半导体层生长之前，通过选择性地布置镓面极性区域和氮化物极性极性区域来省略凹陷工艺并提高再现性 。 构成：将极性选择层（20）放置在基板（10）上。 多个氮化镓半导体层被放置在极性选择层上。 源（S）放置在多个氮化镓半导体层上。 栅极（G）和漏极（D）被放置在多个氮化镓半导体层上。 多个氮化镓半导体层的栅极对应区域包括氮化物面极性区域。

公开(公告)号：KR101182035B1

公开(公告)日：2012-09-11

申请号：KR1020050117734

申请日：2005-12-05

Applicant: 삼성전자주식회사

Inventor： 김병직 ,  황성택 ,  김상호 ,  이규웅 ,  김성기 ,  이재훈 ,  김용규 ,  이한림 ,  김훈

IPC: H04B7/155 ,  H04B7/04

Abstract: 본 발명에 따른 각기 다른 방식의 채널들이 다중화된 하향 및 상향 데이터를 무선 송수신하기 위한 원격 기지국 유닛은 상기 하향 데이터를 무선 송신하고 무선 수신된 상기 상향 데이터를 상기 원격 기지국 유닛의 내부로 입력시키기 위한 안테나와, 상기 하향 데이터 중 분할된 하향 시분할 채널들을 상기 안테나로 출력하고 상기 안테나를 통해서 입력된 상향 데이터 중 분할된 상향 시분할 채널들을 입력받는 스위치와, 상기 하향 시분할 채널들과 상기 상향 시분할 채널들이 중첩되지 않도록 상기 스위치를 제어하는 제어기를 포함한다.
원격 기지국 유닛, 광전 변환, 전광 변환

公开(公告)号：KR1020110084709A

公开(公告)日：2011-07-26

申请号：KR1020100004406

申请日：2010-01-18

Applicant: 삼성전자주식회사

Inventor： 이재훈 ,  고종만 ,  정용희

IPC: H01L29/737

CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/66462

Abstract: PURPOSE: A nitride-based heterojunction field-effect transistor and a manufacturing method thereof are provided to enhance crystallinity of a nitride-based semiconductor material, thereby enhancing a trans-conductance feature. CONSTITUTION: A convex pattern is formed on a sapphire substrate(101) wherein the convex pattern has a cowl shape. A nitride-based buffer layer(102) is formed on the sapphire substrate. A semi-insulating GaN layer is formed on the nitride-based buffer layer. An AlGaN layer(106) is formed on an semi-insulating GaN layer. The semi-insulating GaN layer comprises a GaN layer in which one of Mg, Fe, and C is doped. The semi-insulating GaN layer includes an undoped GaN layer which is formed between the doped GaN layer and the AlGaN layer.

Abstract translation: 目的：提供氮化物基异质结场效应晶体管及其制造方法，以提高氮化物基半导体材料的结晶度，从而提高反电导特性。 构成：在蓝宝石衬底（101）上形成凸形图案，其中凸形图案具有整流罩形状。 在蓝宝石衬底上形成氮化物基缓冲层（102）。 在氮化物基缓冲层上形成半绝缘GaN层。 在半绝缘GaN层上形成AlGaN层（106）。 半绝缘GaN层包括其中掺杂有Mg，Fe和C中的一种的GaN层。 半绝缘GaN层包括在掺杂的GaN层和AlGaN层之间形成的未掺杂的GaN层。

公开(公告)号：KR1020110071935A

公开(公告)日：2011-06-29

申请号：KR1020090128659

申请日：2009-12-22

Applicant: 삼성전자주식회사

Inventor： 이재훈 ,  박수영

IPC: H01L21/205 ,  H01L21/683 ,  H01L21/687

CPC classification number: C23C16/4585 ,  H01L21/68735

Abstract: PURPOSE: A disk for a chemical vapor deposition device is provided to reduce the wavelength dispersion of a light emitting diode device by preventing a temperature difference between the edge and the center of the substrate. CONSTITUTION: A mounter(110) includes a trench(110b) and a support unit which supports a substrate. The trench is arranged along the frame of the support unit and corresponds to the edge of a plate. A sidewall unit(120) is arranged along the outside of the mounter. The trench is formed on the upper side of the disk. The support unit has a constant curvature and a recessed shape. The trench is extended to the outer end of the sidewall unit of the disk.

Abstract translation: 目的：提供用于化学气相沉积装置的盘，以通过防止衬底的边缘和中心之间的温度差来减小发光二极管器件的波长色散。 构成：安装器（110）包括沟槽（110b）和支撑衬底的支撑单元。 沟槽沿着支撑单元的框架布置并且对应于板的边缘。 侧壁单元（120）沿着安装器的外侧布置。 沟槽形成在盘的上侧。 支撑单元具有恒定的曲率和凹陷形状。 沟槽延伸到盘的侧壁单元的外端。

公开(公告)号：KR1020110068574A

公开(公告)日：2011-06-22

申请号：KR1020090125591

申请日：2009-12-16

Applicant: 삼성전자주식회사

Inventor： 이재훈 ,  이동율 ,  김권철

IPC: G02F1/13357

CPC classification number: G02F1/13306 ,  G02F1/133603 ,  G02F1/133606 ,  G02F2001/13324

Abstract: PURPOSE: A plane light source apparatus is provided to reduce power consumption by using a solar cell. CONSTITUTION: A plane light source apparatus comprises a substrate, a light source unit(110) which is placed on the substrate, a solar cell module(130) which absorbs light from the light source and changes the light into electric energy, a light source driving unit(120) which drives one or more light source using the changed electric energy from the solar cell module, and a diffusion sheet which uniformly diffuses light.

Abstract translation: 目的：提供一种平面光源装置，以通过使用太阳能电池来降低功耗。 构成：平面光源装置包括基板，放置在基板上的光源单元（110），吸收来自光源的光并将光变换为电能的太阳能电池模块（130），光源 驱动单元（120），其使用来自太阳能电池模块的改变的电能驱动一个或多个光源;以及扩散片，其均匀地漫射光。