Abstract:
PROBLEM TO BE SOLVED: To provide an active light or radiation sensitive resin composition which allows formation of a pattern having less water residue defects, bubble defects, and development residue defects and is superior in LWR, and a pattern forming method using this resin composition. SOLUTION: The active light or radiation sensitive resin composition includes a resin (HR) having a recurring unit (a) which has a polycyclic structure in its main chain and has a portion where the polycyclic structure is decomposed by the action of an acid to increase the solubility in an alkaline developer. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a composition (coating liquid) for film formation capable of forming an insulating film that has a low dielectric constant and excellent mechanical strengths and has good surface properties (film surface properties) and heat resistance. SOLUTION: The composition for film formation comprises a polymer (A) comprising a monomer unit represented by formula (1) (wherein R 1 is alkyl or aryl; R 2 is alkyl, alkenyl, alkynyl, aryl, alkoxy, acyloxy, aryloxy, hydroxy, carboxy, alkoxycarbonyl, aryloxycarbonyl, trialkylsilyl or triarylsilyl; when a plurality of R 2 exist, they may be the same or different from each other and may be linked together to form a ring structure; and n is an integer of 0-5). COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a composition for forming a film capable of forming a film that exhibits high heat resistance, high mechanical strengths, a low dielectric constant, surface smoothness and good preservation stability with time, a film obtained using the composition for forming a film, and an electronic device comprising the film. SOLUTION: The composition for forming a film comprises a compound represented by formula (1) and/or a polymer obtained by polymerizing at least the compound represented by formula (1). The film is formed using the composition for forming a film. The electronic device comprises the film. In formula (1), A 1 is a tetravalent to hexavalent organic group; A 2 is an alkenyl group or an alkynyl group; Ar is an (a1+1)-valent aryl group; R is a hydrogen atom or a 1-30C alkyl group; a1 is an integer of 1-5; and a2 is 2 or 3. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a composition for forming an interlayer insulation film, having good film characteristics such as permittivity, mechanical strengths, etc., used for an electronic device, also having a good close adhesion with a substrate plate, and further excellent in the stability of coating liquid. SOLUTION: This composition for the interlayer insulation film contains the following components. (A) A hydrolysate obtained by hydrolyzing an alkoxy silane or acyloxysilane having at least one carbon-carbon double bond under ≤10 mass% substrate concentration. (B) A compound having at least two bonds selected from a carbon-carbon double bond and carbon-carbon triple bond in its molecule and (C) solvent. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an ethynyl compound having high heat resistance. SOLUTION: A compound represented by formula (1) is disclosed. It is desirable that Ar in the compound represented by formula (1) is a residue derived by removing n 1 hydrogen atoms from a benzene ring. That is to say, the compound represented by formula (1) is a compound represented by formula (2). In formulae (1) and (2), Ar is an n 1 -valent aryl group; n 1 is an integer of 2-4; and n 2 is an integer of 1 or 2. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a composition for forming a low dielectric constant film which can form an insulating film that is used for an interlayer film of an electronic device or the like, has a low dielectric constant and superior mechanical strength and has a sufficient film characteristic, and to provide the insulating film obtained by using the composition and the electronic device having the insulating film. SOLUTION: The composition for forming low dielectric constant film comprises a compound having a structure where aryl groups are diazo-coupled. The insulating film obtained by using the composition and the electronic device having the insulating film are provided. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a polymer having a high purity cage type structure and having a low dielectric constant, to provide a composition containing the same and used for forming insulated films having low dielectric constants and excellent mechanical strengths for interlayer films for electronic devices and the like, to provide an interlayer insulated film for an electronic device and obtained from the composition, and to provide an electronic device using the insulated film as a layer-constituting layer. SOLUTION: This method for polymerizing or oligomerizing a carbon-carbon triple bond-having compound is characterized by using a radical generator as a polymerization or oligomerization-initiator and using a phenoxy compound having a specific structure as a solvent. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a positive photosensitive composition material having an excellent line edge roughness (LWR) property and a pattern forming method using it. SOLUTION: The positive type photosensitive composition comprises a chemical compound (A) generating acid when irradiated with active light ray or radiation, a resin (B1) containing a repeat unit having a group decomposed by a monocyclic aliphatic group and acid and producing an alkali soluble group, a positive photosensitive composition material characterized by containing resin (B2) containing a repeat unit having a group decomposed by a single ring aliphatic group and acid different from the repeat unit having a group decomposed by a single ring aliphatic machine and acid of the resin (B1) and producing an alkali soluble group and producing an alkali soluble group. The pattern forming method uses this positive type photosensitive composition. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To solve problems in techniques to improve performances in microprocessing of semiconductor elements using active rays or radiation, particularly, KrF excimer laser light, electron beams or EUV light, and to provide a positive resist composition having high sensitivity, reduced roughness and pattern density dependence, and showing excellent sensitivity and dissolution contrast even in exposure to EUV light, and to provide a pattern forming method using the composition. SOLUTION: The resist composition comprises a resin containing an ester group having a structure in which an aliphatic ring is ring-condensed with a benzene ring having an acid-labile group, and a compound which generates an acid by irradiation with active rays or radiation. The pattern forming method is carried out by using the above composition. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a positive resist composition which can be suitably used when ArF excimer laser light is used as an exposure light source, excels in line edge roughness, and causes neither pattern collapse nor problem of development defects, and a pattern forming method using the same, and to further provide a positive resist composition excellent in pattern profile and exposure latitude and a pattern forming method using the same. SOLUTION: The positive resist composition contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (B) a resin which is decomposed by the action of an acid to increase its solubility in an alkali developer, and (C) a low-molecular compound having a specific lactone structure. The pattern forming method using the positive resist composition is also provided. COPYRIGHT: (C)2007,JPO&INPIT