Abstract:
In an end surface 32b of the second transmission line forming body 32 forming a second waveguide 30, the height of a central region 33 which includes an opening of the second transmission line 30b is a reference plane. A depressed portion 32e that is depressed to a depth greater than the length of a thread portion of a screw 205 from the reference plane is provided in a region outside the central region 33 and includes a screw hole forming position. A screw hole 32d for fixing an external circuit 200 to be connected is provided at the screw hole forming position in the depressed portion 32e. The height of a region, which is excluding the depressed portion 32e and is further away from the central region 33 than the screw hole forming position, is equal to the reference plane.
Abstract:
A flat cable high-frequency filter includes a dielectric substrate extending in a transmission direction of a high-frequency signal. The dielectric substrate includes dielectric layers stacked on each other. Elongated conductor patterns are provided on a flat surface of one dielectric layer which faces another dielectric layer. The conductor patterns are as wide as possible in the dielectric substrate in accordance with a desired inductance. A capacitive coupling conductor pattern opposes one conductor pattern by a predetermined area with a dielectric layer therebetween. By using a connecting conductor, the capacitive coupling conductor pattern is connected to the conductor pattern which does not oppose the capacitive coupling conductor pattern.
Abstract:
A flat cable high-frequency filter includes a dielectric substrate extending in a transmission direction of a high-frequency signal. The dielectric substrate includes dielectric layers stacked on each other. Elongated conductor patterns are provided on a flat surface of one dielectric layer which faces another dielectric layer. The conductor patterns are as wide as possible in the dielectric substrate in accordance with a desired inductance. A capacitive coupling conductor pattern opposes one conductor pattern by a predetermined area with a dielectric layer therebetween. By using a connecting conductor, the capacitive coupling conductor pattern is connected to the conductor pattern which does not oppose the capacitive coupling conductor pattern.
Abstract:
Methods and apparatus, including computer program products, are provided for tunable filters and/or front-ends. In one aspect there is provided an apparatus. The apparatus may a first band filter; a second tunable band filter; and a radio frequency switch coupled to at least the first band filter and the second tunable band filter, wherein the radio frequency switch is configured to switch between at least the first band filter and the second tunable band filter. Related apparatus, systems, methods, and articles are also described.
Abstract:
In a filter device, a first filter and a second filter are connected to a common connection point by a filter connection conductor line including a first conductor line portion, and a parallel connection area with an electrical length shorter than that in a single conductor line is provided in the first conductor line portion.
Abstract:
A high-frequency transmission device includes first and second resonators as ring-shaped wires each having an opening part at a part thereof, first and second input/output terminals each electrically connected to both resonators, a first ground shield formed on a plane different from planes on which both resonators are arranged, a second ground shield formed on a plane different from the planes on which both resonators and the first ground shield are arranged, and first and second ground wires each formed to surround peripheries of both resonators. The ground shields and the ground wires are respectively connected to each other. A dielectric wire is present between both ground wires, and the ground wires are not electrically connected to each other.
Abstract:
A method for implementing a TM dielectric resonator is provided, which includes: a dielectric resonant column component with a metal connecting plate is machined; a metal cavity with an opening at one end is machined; the metal connection plate of the dielectric resonant column component is fastened to the inner wall of the metal cavity by a screw; the opening of the metal cavity is covered with a prefabricated cover plate; and a prefabricated tuning screw is screwed from the cover plate into the metal cavity.
Abstract:
A transverse electromagnetic (TEM) mode dielectric filter and a manufacturing method thereof are provided. The mode dielectric filter provided by the present invention includes a dielectric body and a silver plating layer, where the silver plating layer covers a surface of the dielectric body, and a dielectric constant of the dielectric body is less than or equal to 21. The TEM dielectric filter provided by the present invention has a large energy storage space in a single resonant cavity of a dielectric material, and has a high quality factor. An insertion loss of the TEM dielectric filter is low, and electrical conductivity of the silver plating layer is high.
Abstract translation:提供横向电磁(TEM)模式介质滤波器及其制造方法。 本发明提供的模式介质滤波器包括介电体和银镀层,其中镀银层覆盖电介质体的表面,电介质体的介电常数小于或等于21. TEM 由本发明提供的介质滤波器在电介质材料的单个谐振腔中具有大的能量存储空间,并具有高品质因数。 TEM介质滤波器的插入损耗低,镀银层的导电性高。
Abstract:
Various multi-mode resonant filters including a housing having a cavity, are provided. The multi-mode resonant filters include a Dielectric Resonant (DR) element received in the cavity of the housing, and a plurality of transmission lines for connecting a point on one of a first axis, a second axis, and a third axis with a point on another axis. The first axis, the second axis, and the third axis are orthogonal to each other with respect to a center of the DR element.
Abstract:
Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes foaming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.