Micro-electro-mechanical system (MEMS) capacitive ohmic switch and design structures
    172.
    发明授权
    Micro-electro-mechanical system (MEMS) capacitive ohmic switch and design structures 有权
    微机电系统(MEMS)电容欧姆开关和设计结构

    公开(公告)号:US09006797B2

    公开(公告)日:2015-04-14

    申请号:US14041983

    申请日:2013-09-30

    Abstract: A micro-electro-mechanical system (MEMS), methods of forming the MEMS and design structures are provided. The method includes forming a coplanar waveguide (CPW) comprising a signal electrode and a pair of electrodes on a substrate. The method includes forming a first sacrificial material over the CPW, and a wiring layer over the first sacrificial material and above the CPW. The method includes forming a second sacrificial material layer over the wiring layer, and forming insulator material about the first sacrificial material and the second sacrificial material. The method includes forming at least one vent hole in the insulator material to expose portions of the second sacrificial material, and removing the first and second sacrificial material through the vent hole to form a cavity structure about the wiring layer and which exposes the signal line and pair of electrodes below the wiring layer. The vent hole is sealed with sealing material.

    Abstract translation: 提供了微机电系统(MEMS),形成MEMS和设计结构的方法。 该方法包括在衬底上形成包括信号电极和一对电极的共面波导(CPW)。 该方法包括在CPW上形成第一牺牲材料,以及在第一牺牲材料上方和CPW上方的布线层。 该方法包括在布线层上形成第二牺牲材料层,以及围绕第一牺牲材料和第二牺牲材料形成绝缘体材料。 所述方法包括在所述绝缘体材料中形成至少一个通气孔以暴露所述第二牺牲材料的部分,以及通过所述通气孔去除所述第一和第二牺牲材料以形成围绕所述布线层的空腔结构,并且暴露所述信号线和 一对电极在布线层下方。 通气孔用密封材料密封。

    Method for integrating MEMS microswitches on GaN substrates comprising electronic power components
    173.
    发明授权
    Method for integrating MEMS microswitches on GaN substrates comprising electronic power components 有权
    将MEMS微型开关集成在包括电子功率部件的GaN衬底上的方法

    公开(公告)号:US08859318B2

    公开(公告)日:2014-10-14

    申请号:US13696569

    申请日:2010-05-07

    Abstract: Methods of fabrication of electronic modules comprise, on the one hand, power electronic components fabricated on a substrate made of gallium nitride (GaN) and, on the other hand, micro-switches using electrostatic activation of the MEMS (Micro Electro Mechanical System) type. The electronic components and the micro-switches are fabricated on a single gallium nitride substrate and the fabrication method comprises at least the following steps: fabrication of the power components on the gallium nitride substrate; deposition of a first common passivation layer on said components and on the substrate; fabrication of the micro-switches on said substrate.

    Abstract translation: 电子模块的制造方法一方面包括制造在由氮化镓(GaN)制成的衬底上的功率电子部件,另一方面,使用使用MEMS(微机电系统)型的静电激活的微型开关 。 电子部件和微型开关被制造在单个氮化镓衬底上,并且制造方法至少包括以下步骤:制造氮化镓衬底上的功率部件; 在所述组件和衬底上沉积第一公共钝化层; 所述基板上的微型开关的制造。

    Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structures
    174.
    发明授权
    Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structures 有权
    微机电系统(MEMS)电容OHMIC开关和设计结构

    公开(公告)号:US08592876B2

    公开(公告)日:2013-11-26

    申请号:US13342689

    申请日:2012-01-03

    Abstract: A micro-electro-mechanical system (MEMS), methods of forming the MEMS and design structures are provided. The method comprises forming a coplanar waveguide (CPW) comprising a signal electrode and a pair of electrodes on a substrate. The method comprises forming a first sacrificial material over the CPW, and a wiring layer over the first sacrificial material and above the CPW. The method comprises forming a second sacrificial material layer over the wiring layer, and forming insulator material about the first sacrificial material and the second sacrificial material. The method comprises forming at least one vent hole in the insulator material to expose portions of the second sacrificial material, and removing the first and second sacrificial material through the vent hole to form a cavity structure about the wiring layer and which exposes the signal line and pair of electrodes below the wiring layer. The vent hole is sealed with sealing material.

    Abstract translation: 提供了微机电系统(MEMS),形成MEMS和设计结构的方法。 该方法包括在衬底上形成包括信号电极和一对电极的共面波导(CPW)。 该方法包括在CPW上形成第一牺牲材料,以及在第一牺牲材料上方和CPW上方的布线层。 该方法包括在布线层上形成第二牺牲材料层,以及围绕第一牺牲材料和第二牺牲材料形成绝缘体材料。 该方法包括在绝缘体材料中形成至少一个通气孔以暴露第二牺牲材料的部分,以及通过通气孔去除第一和第二牺牲材料,以形成围绕布线层的空腔结构,并使信号线和 一对电极在布线层下方。 通气孔用密封材料密封。

    ELECTRONIC ELEMENT, VARIABLE CAPACITOR, MICRO SWITCH, METHOD FOR DRIVING MICRO SWITCH, AND MEMS TYPE ELECTRONIC ELEMENT
    175.
    发明申请
    ELECTRONIC ELEMENT, VARIABLE CAPACITOR, MICRO SWITCH, METHOD FOR DRIVING MICRO SWITCH, AND MEMS TYPE ELECTRONIC ELEMENT 审中-公开
    电子元件,可变电容器,微动开关,用于驱动微动开关的方法和MEMS型电子元件

    公开(公告)号:US20130271805A1

    公开(公告)日:2013-10-17

    申请号:US13864430

    申请日:2013-04-17

    Abstract: An electronic element includes a fixed portion, and a movable portion which is movable with respect to the fixed portion and which is provided to generate a spring force to make restoration to a predetermined position. The fixed portion is provided with a first driving electrode and a first signal electrode. The movable portion is provided with a second driving electrode and a second signal electrode. An electrostatic force is generated between the first driving electrode and the second driving electrode by a voltage applied therebetween so that the electrostatic force resists against the spring force; and the first and second driving electrodes and the first and second signal electrodes are arranged so that the electrostatic force is generated in a direction in which a spacing distance between the first and second signal electrodes is widened.

    Abstract translation: 电子元件包括固定部分和可相对于固定部分移动并且被设置成产生弹簧力以使其恢复到预定位置的可动部分。 固定部设置有第一驱动电极和第一信号电极。 可动部设置有第二驱动电极和第二信号电极。 通过施加在第一驱动电极和第二驱动电极之间的电压产生静电力,使得静电力抵抗弹簧力; 并且第一和第二驱动电极以及第一和第二信号电极被布置成使得在第一和第二信号电极之间的间隔距离变宽的方向产生静电力。

    Shape memory device
    176.
    发明授权
    Shape memory device 有权
    形状记忆装置

    公开(公告)号:US08553455B2

    公开(公告)日:2013-10-08

    申请号:US11528712

    申请日:2006-09-27

    Abstract: Mechanical devices having bistable positions are utilized to form switches and memory devices. The devices are actuatable to different positions and may be coupled to a transistor device in various configurations to provide memory devices. Actuation mechanisms include electrostatic methods and heat. In one form, the mechanical device forms a gate for a field effect transistor. In a further form, the device may be a switch that may be coupled to the transistor in various manners to affect its electrical characteristics when on and off. The memory switch in one embodiment comprises side walls formed with tensile or compressive films. A cross point switch is formed from a plurality of intersecting conductive rows and columns of conductors. Actuatable switches are positioned between each intersection of the rows and columns such that each intersection is independently addressable.

    Abstract translation: 利用具有双稳态位置的机械装置来形成开关和存储装置。 这些器件可被驱动到不同的位置,并且可以以各种配置耦合到晶体管器件以提供存储器件。 致动机制包括静电法和热量。 在一种形式中,机械装置形成用于场效应晶体管的栅极。 在另一种形式中,器件可以是开关,其可以以各种方式耦合到晶体管,以便在接通和断开时影响其电特性。 在一个实施例中的存储器开关包括由拉伸或压缩膜形成的侧壁。 交叉点开关由多个交叉的导电行和导体列形成。 可执行开关位于行和列的每个交叉点之间,使得每个交叉点可独立寻址。

    MEMS devices
    177.
    发明授权
    MEMS devices 有权
    MEMS器件

    公开(公告)号:US08546712B2

    公开(公告)日:2013-10-01

    申请号:US13203624

    申请日:2010-03-04

    Abstract: A MEMS device comprises first and second opposing electrode arrangements (22,28), wherein the second electrode arrangement (28) is electrically movable to vary the electrode spacing between facing sides of the first and second electrode arrangements. At least one of the facing sides has a non-flat surface with at least one peak and at least one trough. The height of the peak and depth of the trough is between 0.01t and 0.1t where t is the thickness of the movable electrode.

    Abstract translation: MEMS器件包括第一和第二相对电极布置(22,28),其中第二电极布置(28)可电可移动以改变第一和第二电极布置的相对侧之间的电极间距。 至少一个相对侧具有具有至少一个峰和至少一个槽的非平坦表面。 槽的高度和深度在0.01t到0.1t之间,其中t是可动电极的厚度。

    MEMS Switch Having One or More Vacuum Gaps
    178.
    发明申请
    MEMS Switch Having One or More Vacuum Gaps 审中-公开
    具有一个或多个真空间隙的MEMS开关

    公开(公告)号:US20130220783A1

    公开(公告)日:2013-08-29

    申请号:US13396539

    申请日:2012-02-14

    Abstract: A MEMS switch comprises a top conductor and at least one first insulator layer having a lateral opening. The at least one first insulator layer hermetically seals the top conductor. At least one second insulator layer is positioned below the at least one first insulator layer such that at least one vacuum gap is formed within the lateral opening between the top conductor and the at least one second insulator layer. The at least one vacuum gap has a thickness in the range 0.5 Å to 100 Å when the top conductor is at rest. The thickness of the at least one vacuum gap varies when the top conductor is moved. The insulator layer has at least one opening that exposes a conducting area of at least one contact conductor within the second insulator layer. At least one actuation conductor that is electrically insulated from the at least one contact conductor such that application of at least one actuation voltage to the at least one actuation conductor moves the at least one contact conductor and the top conductor closer to each other within the at least one vacuum gap.

    Abstract translation: MEMS开关包括顶部导体和具有侧向开口的至少一个第一绝缘体层。 所述至少一个第一绝缘体层密封所述顶部导体。 至少一个第二绝缘体层位于至少一个第一绝缘体层的下方,使得在顶部导体和至少一个第二绝缘体层之间的侧向开口内形成至少一个真空间隙。 当顶部导体静止时,该至少一个真空间隙的厚度在0.5埃至100埃的范围内。 当顶部导体移动时,至少一个真空间隙的厚度变化。 绝缘体层具有暴露第二绝缘体层内的至少一个接触导体的导电区域的至少一个开口。 至少一个致动导体,其与所述至少一个接触导体电绝缘,使得对所述至少一个致动导体施加至少一个致动电压,使所述至少一个接触导体和所述顶部导体在所述至少一个接触导体内更接近地彼此移动 至少一个真空间隙。

    MEMs devices
    179.
    发明授权
    MEMs devices 有权
    MEMs设备

    公开(公告)号:US08339764B2

    公开(公告)日:2012-12-25

    申请号:US12990158

    申请日:2009-05-07

    Abstract: A MEMS device comprises first and second opposing electrodes (42,46), wherein the second electrode (46) is electrically movable to vary the electrode spacing between facing first sides of the first and second electrodes. A first gas chamber (50) is provided between the electrodes, at a first pressure, and a second gas chamber (52) is provided on the second, opposite, side of the second electrode at a second pressure which is higher than the first pressure. This arrangement provides rapid switching and with damping of oscillations so that settling times are reduced.

    Abstract translation: MEMS器件包括第一和第二相对电极(42,46),其中第二电极(46)可电可移动以改变第一和第二电极的相对的第一侧之间的电极间隔。 第一气室(50)在第一压力下设置在电极之间,第二气室(52)以比第一压力高的第二压力设置在第二电极的第二相对侧上 。 这种布置提供了快速切换和振荡的阻尼,从而降低了沉降时间。

    Method for reducing substrate charging
    180.
    发明授权
    Method for reducing substrate charging 有权
    减少基板充电的方法

    公开(公告)号:US08294976B1

    公开(公告)日:2012-10-23

    申请号:US12415937

    申请日:2009-03-31

    Abstract: An electrostatically actuatable micro electromechanical device is provided with enhanced reliability and lifetime. The electrostatically actuatable micro electromechanical device comprises: a substrate, a first conductor fixed to the top layer of the substrate, forming a fixed electrode, a second conductor fixed to the top layer of the substrate, and a substrate area. The second conductor is electrically isolated from the first conductor and comprises a moveable portion, suspended at a predetermined distance above the first conductor, the moveable portion forming a moveable electrode which approaches the fixed electrode upon applying an actuation voltage between the first and second conductors. The selected substrate surface area is defined as the orthogonal projection of the moveable portion on the substrate between the first and second conductors. In the substrate surface area at least one recess is provided in at least the top layer of the substrate.

    Abstract translation: 提供了一种可静电驱动的微机电装置,具有更高的可靠性和寿命。 静电致动微机电装置包括:基板,固定到基板的顶层的第一导体,形成固定电极,固定到基板的顶层的第二导体和基板区域。 所述第二导体与所述第一导体电隔离并且包括悬挂在所述第一导体上方预定距离处的可移动部分,所述可移动部分形成在所述第一和第二导体之间施加致动电压时接近所述固定电极的可移动电极。 所选择的基板表面积被定义为在第一和第二导体之间的基板上的可移动部分的正交投影。 在基板表面区域中,至少一个凹部设置在基板的至少顶层中。

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