Abstract:
A pointing device for a computer system includes: a first movement sensor for detecting movements of the device (1) along a first axis (X) and a second axis (Y); a second movement sensor, for detecting movements of the device (1) along a third axis (Z) not coplanar with the first and second axes (X, Y); and a processing unit (6) associated to the movement sensors for producing a plurality of movement signals (AX, AY, AZ, VX, VY, VZ, PX, PY, PZ) indicating the movement of 1the device (1) along the first, second, and third axes (X, Y, Z). The processing unit (6) includes a control stage (15), for controlling the production of the movement signals (AX, AY, AZ, VX, VY, VZ, PX, PY, PZ) on the basis of a response (SZ, AZ) of the second movement sensor (5b).
Abstract:
Instabilities and related drawbacks that arise when interruptions of a perimetral high voltage ring extension implanted regions (RHV) of a main junction (P_tub 1, (P_tub2, …) of an integrated device must be realized may be effectively prevented. This important result is achieved by an extremely simple expedient: whenever an interruption (I) of the high voltage ring extension must be created, it is not realized straight across it along a common orthogonal direction to the perimetral implanted region, on the contrary, the narrow interruption is defined obliquely or slantingly across the width of the perimetral high voltage ring extension. In case of a straight interruption, the angle of slant (α) may be generally comprises between 30 and 60 degrees and more preferably is 45 degrees or close to it. Naturally, the narrow interruption is created by masking it from dopant implantation when realizing the perimetral high voltage ring extension region.
Abstract:
A method for the estimation of the transfer function of a transmission channel in a receiving system of UMTS type envisages the computation of a plurality of channel coefficients, included among known channel coefficients corresponding to pilot symbols, through the reiteration of an interpolation algorithm, capable of calculating an intermediate point (Z, f(Z)) between a first extreme and a second extreme of a determined interval, the first extreme being formed by at least two known points and the second extreme being formed by at least one known point, the intermediate point to be calculated having as abscissa (Z) the abscissa value of the mean point between the points defining the interval rounded off to the integer closest to the first extreme, and having as ordinate (F(Z)) the arithmetic average between the ordinate of the known point of the second extreme and the ordinate of a point, chosen between the two known points of the first extreme, having a distance from the intermediate point equal to the distance between the intermediate point and the known point of the second extreme.
Abstract:
The present invention relates to the managing of lamp fault conditions in electronic ballasts for one or more gas discharge lamps. The method for fault management of electronic ballast for at least one gas discharge lamp comprises the steps of: preheating the lamp filaments applying a low current for a predetermined time; igniting the lamp by increasing at a predetermined rate the voltage applied up to a predetermined strike value; charaterised by monitoring the lamp current; repeating the steps of igniting the lamp and monitoring the lamp current for a predetermined numbers of times if the lamp current is over a predetermined threshold; powering the lamp at normal operating conditions.
Abstract:
An outstandingly effective shell (1) for a DC power supply adaptor (5) of portable apparatuses provides for an easy retrieval and orderly disposition of the DC output cable (7) and of its termination without requiring the use of separate elastic straps or similar holding means, providing for a compact assembly without any dangling part that is far more easy to pack and to handle for transportation and use than the nude adaptor (5). In addition, the shell (1) of the invention provides for a permanent resilient impact absorbing outer protection of the box-like plastic container (5) of the power supply circuitry.
Abstract:
The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200° C. and in some embodiments at about 150° C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.
Abstract:
In an embodiment, a circuit includes cascaded delay units arranged in a chain, each delay unit having an input-to-output delay time, wherein a first delay unit in the chain is configured to receive an input signal for propagating along the delay units in the chain, logic circuitry coupled to delay units in the chain, the logic circuitry configured to generate a clock signal as a logic combination of signals input to and output from the delay units in the chain and feedback circuitry configured to supply to the first delay unit in the chain a feedback signal, the feedback circuitry including a first feedback signal path from a last delay unit in the chain to the first delay unit in the chain and a second feedback signal path from an intermediate delay unit in the chain to the first delay unit in the chain, the intermediate delay unit arranged between the first delay unit in the chain and the last delay unit in the chain.
Abstract:
A supply node receives supply voltage and an output node provides a regulated output voltage to a load. A switching transistor is coupled between the supply and output nodes. The switching transistor is controlled by a drive signal generated by a control circuit to control switching activity. The control circuit includes circuitry to sense a feedback voltage indicative of the regulated output voltage and a comparator generating a comparison logic signal dependent on a comparison of the feedback voltage to a reference. A logic circuit generates a skip signal in response to the comparison logic signal. A counter generates a termination signal. Signal processing circuitry controls the switching activity by asserting the drive signal as a function of the skip signal and the termination signal.
Abstract:
A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.
Abstract:
A circuit includes an electronic switch configured to be coupled intermediate a high-voltage node and low-voltage circuitry and configured to couple the low-voltage circuitry to the high-voltage node. A voltage-sensing node is configured to be coupled to the high-voltage node via a pull-up resistor. A further electronic switch can be switched to a conductive state to couple the voltage-sensing node and the control node of the electronic switch. A comparator compares a threshold with a voltage at the voltage-sensing node and causes the further electronic switch to switch on in response to the voltage at said voltage-sensing node reaching said threshold. A charge pump coupled to the current flow-path of the electronic switch is activated to the conductive state to pump electric charge from the current flow-path of the electronic switch to the control node of the electronic switch via the further electronic switch switched to the conductive state.