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    Optical device
    11.
    发明申请
    Optical device 审中-公开
    光学装置

    公开(公告)号：US20030030066A1

    公开(公告)日：2003-02-13

    申请号：US10216095

    申请日：2002-08-09

    Applicant: Bookham Technology PLC

    Inventor： Edmund Peter Clinton Herman

    IPC: H01L033/00

    CPC classification number: H01S5/02268 ,  H01S5/02272

    Abstract: An optical device (110) has a substrate (101) with an outer surface (103) and an optical component (117) having a base (115) which interfaces with the outer surface of the substrate. In one embodiment at least one gap (109) is disposed between the outer surface of the substrate and the base of the optical device, the at least one gap containing an adhesive (125) which adheres the substrate and the optical device together and at least one interface (123,133) between the base and the outer surface. In another embodiment a plurality of spaced-apart gaps are disposed between the outer surface of the substrate and the base of the optical device, each gap containing an adhesive which adheres the substrate and optical device together.

    Abstract translation: 光学装置（110）具有具有外表面（103）的基板（101）和具有与基板的外表面相接的基座（115）的光学部件（117）。 在一个实施例中，至少一个间隙（109）设置在基板的外表面和光学装置的基部之间，所述至少一个间隙包含将基板和光学装置粘合在一起的粘合剂（125），并且至少 一个接口（123,133）在基座和外表面之间。 在另一个实施例中，多个间隔开的间隙设置在基板的外表面和光学装置的基座之间，每个间隙包含将基板和光学装置粘合在一起的粘合剂。

    High speed electrical connection
    12.
    发明申请
    High speed electrical connection 审中-公开
    高速电气连接

    公开(公告)号：US20030020560A1

    公开(公告)日：2003-01-30

    申请号：US10201077

    申请日：2002-07-24

    Applicant: Bookham Technology plc

    Inventor： Stephen Paul Marsh

    IPC: H01P001/04

    CPC classification number: H01P5/085 ,  H01P3/003

    Abstract: In electronic apparatus, a coaxial signal cable is connected to a semiconductor circuit using a coaxial connector 24 to convert the coaxial signal to a coplanar wave (CPW) mode, the CPW mode signal being transferred from the connector 24 to the circuit 27 via a flexible connection 23 comprising a CPW transmission line 25 on a flexible substrate 26.

    Abstract translation: 在电子设备中，使用同轴连接器24将同轴信号电缆连接到半导体电路，以将同轴信号转换为共面波（CPW）模式，CPW模式信号通过柔性的从连接器24传送到电路27 连接23包括柔性基板26上的CPW传输线25。

    System
    13.
    发明申请
    System 有权
    系统

    公开(公告)号：US20030002801A1

    公开(公告)日：2003-01-02

    申请号：US10176358

    申请日：2002-06-20

    Applicant: Bookham Technology PLC

    Inventor： Renaud Vegny ,  Christophe P. Prel

    IPC: G02B006/26 ,  G02B006/30 ,  G02B006/36

    CPC classification number: G02B6/3676 ,  G02B6/30 ,  G02B6/3652 ,  G02B6/3692

    Abstract: A system (10) comprises a carrier (1) which is adapted to carry an optical fiber (9) and an optical chip (3) having a circuit element (4). The carrier and the optical chip are provided with co-operable alignment features (13,14) for aligning the carrier with the optical chip so that the optical fiber and the circuit element are optically coupled.

    Abstract translation: 系统（10）包括适于承载光纤（9）的载体（1）和具有电路元件（4）的光学芯片（3）。 载体和光学芯片设置有用于使载体与光学芯片对准的可协调对准特征（13,14），使得光纤和电路元件光学耦合。

    Integrated optical device
    14.
    发明申请
    Integrated optical device 有权
    集成光器件

    公开(公告)号：US20020131747A1

    公开(公告)日：2002-09-19

    申请号：US09864393

    申请日：2001-05-25

    Applicant: Bookham Technology plc

    Inventor： Stephen William Roberts ,  Bradley Jonathan Luff ,  John Paul Drake ,  Stephen Geoffrey Unwin

    IPC: G02B006/125

    CPC classification number: G02B6/136 ,  G02B6/1228 ,  G02B6/132 ,  G02B6/305 ,  G02B2006/12097

    Abstract: A rib waveguide structure comprising a layer (4) of light conductive material defined between two planar faces with a rib (9) formed on one of the faces and an optical components e.g. a tapered waveguide (6) optically coupled to the other face. An inverted rib waveguide comprising a light conductive layer (11) and a rib (10) that projects from the light conductive layer (11) into a substrate (4, 8) is also described as well as other optical devices comprising a light conductive layer separated from a substrate by a non-planar layer (3) of light confining material and optical devices comprising two or more layers (2, 3; 18, 19, 20) of light confining material buried within a rib with a light conducting component (10; 17; 22) at least a part of which is formed between planes defined by the two layers of light confining material. A method of forming such devices is also described.

    Abstract translation: 肋波导结构包括限定在两个平面之间的导光材料层（4），其上形成有一个表面上的肋（9） 光学耦合到另一个面的锥形波导（6）。 还描述了包括导光层（11）和从导光层（11）突出到衬底（4,8）中的肋（10）的倒置肋波导，以及包括导光层 通过光限制材料的非平面层（3）和包含两个或更多层（2,3; 18,19,20）的光限制材料的光限制材料与基片间隔开， 10; 17; 22），其至少一部分形成在由两层光限制材料限定的平面之间。 还描述了形成这种装置的方法。

    Thermal actuator
    17.
    发明申请
    Thermal actuator 有权
    热致动器

    公开(公告)号：US20040261412A1

    公开(公告)日：2004-12-30

    申请号：US10819457

    申请日：2004-04-07

    Applicant: Bookham Technology PLC

    Inventor： Ryan Murray Hickey

    IPC: G11B005/56 ,  G11B021/24

    CPC classification number: B81B3/004 ,  B81B3/0024 ,  B81B2201/047 ,  B81B2203/0118 ,  B81B2203/033 ,  B81B2203/058 ,  G02B26/0866 ,  H01H2061/008

    Abstract: An asymmetric MEMS thermal actuator device includes a base portion, typically a pair of bond pads, and an actuator element connected to the base portion by a flexure portion. The actuator element has a first arm and a second arm alongside the first arm and spaced from the first arm. The second arm is wider than the first arm so that the actuator element deflects about the flexure element due to differential heating in the first and second arms when an electrical current is passed therethrough. A cut-out portion is provided in the second arm adjacent the first arm so as to increase the spacing therefrom over at least a portion of the second arm. Preferably, a heat sink is also provided laterally adjacent the second arm.

    Abstract translation: 非对称MEMS热致动器装置包括基部，通常为一对接合焊盘，以及通过挠曲部分连接到基部的致动器元件。 致动器元件具有与第一臂并排并与第一臂间隔开的第一臂和第二臂。 第二臂比第一臂宽，使得当电流通过其中时，由于第一和第二臂中的差加热，致动器元件围绕挠曲元件偏转。 切割部分设置在邻近第一臂的第二臂中，以便在第二臂的至少一部分上增加其间隔。 优选地，散热器还横向设置在第二臂的附近。

    Method for integrating optical devices in a single epitaxial growth step
    18.
    发明申请
    Method for integrating optical devices in a single epitaxial growth step 有权
    在单个外延生长步骤中将光学器件集成的方法

    公开(公告)号：US20040147053A1

    公开(公告)日：2004-07-29

    申请号：US10676976

    申请日：2003-09-30

    Applicant: BOOKHAM TECHNOLOGY, PLC

    Inventor： Richard William Glew ,  Ian B. Betty ,  Jonathan Greenspan

    IPC: H01L021/00 ,  C30B001/00 ,  H01L021/36

    CPC classification number: H01L21/02463 ,  G02B6/1228 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

    Abstract: A method for integrating optical devices in a single growth step by utilizing a combination of Selective Area Growth and Etch (SAGE) is provided. An first device is formed between a set of oxide-masked regions, whilst a second device is formed in an adjacent planar region. By use of Selected Area Growth and Etch (SAGE), in which the growth between the oxide-masked regions is greater than the growth in the planar region, and in which the etch rate in the area between the oxide-masked regions is substantially the same as that in the planar region, the number of active quantum layers for the first device are formed between the oxide-masked regions, and a different number of layers for the second device is formed in the planar region.

    Abstract translation: 提供了通过利用选择区生长和蚀刻（SAGE）的组合在一个生长步骤中整合光学器件的方法。 在一组氧化物掩蔽区域之间形成第一器件，而第二器件形成在相邻的平坦区域中。 通过使用选择区生长和蚀刻（SAGE），其中氧化物掩模区域之间的生长大于平面区域的生长，并且其中氧化物掩模区域之间的区域中的蚀刻速率基本上是 与平面区域相同，在氧化物掩模区域之间形成第一器件的有源量子层的数量，并且在平面区域中形成不同数量的第二器件的层。

    Thermo-optic semiconductor device
    19.
    发明申请
    Thermo-optic semiconductor device 有权
    热电半导体器件

    公开(公告)号：US20030057428A1

    公开(公告)日：2003-03-27

    申请号：US10283466

    申请日：2002-10-30

    Applicant: Bookham Technology PLC

    Inventor： Ian Edward Day

    IPC: H01L033/00

    CPC classification number: G02F1/025 ,  G02F1/0147

    Abstract: A thermo-optic semiconductor device has one semiconductor region providing an optical waveguide and an adjacent semiconductor region providing a resistive heater between two doped regions, current may be passed through the resistive heater within the adjacent semiconductor region to heat it and thereby vary the optical characteristics of the waveguide.

    Abstract translation: 热光半导体器件具有提供光波导的一个半导体区域和在两个掺杂区域之间提供电阻加热器的相邻半导体区域，电流可以通过相邻半导体区域内的电阻加热器加热，从而改变光学特性 的波导。

    Optical waveguide structure
    20.
    发明申请
    Optical waveguide structure 审中-公开
    光波导结构

    公开(公告)号：US20020131744A1

    公开(公告)日：2002-09-19

    申请号：US09855525

    申请日：2001-05-16

    Applicant: Bookham Technology plc

    Inventor： Ivan Evans ,  Arnold Peter Roscoe Harpin

    IPC: G02B006/10

    CPC classification number: G02B6/1228 ,  G02B6/12 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12097

    Abstract: An optical waveguide structure formed on an optical chip comprising a first waveguide layer 3 of a first material supported on a substrate 7 and a second waveguide layer 6 of a second material supported on the first waveguide layer 3. The first waveguide layer 3 is separated from the substrate 7 by an optical confinement layer 8 and the second waveguide layer 6 is separated from the first waveguide layer 3 by an etch-stop layer 9. The etch-stop layer 9 is thin compared to the thickness of the first waveguide layer 3 and/or the second waveguide layer 6 and is of a material which enables it to act as an etch-stop when features are etched in the second waveguide layer 6.)

    Abstract translation: 一种形成在光学芯片上的光波导结构，包括支撑在基板7上的第一材料的第一波导层3和支撑在第一波导层3上的第二材料的第二波导层6.第一波导层3与 通过光学限制层8和第二波导层6的衬底7通过蚀刻停止层9与第一波导层3分离。与第一波导层3的厚度相比，蚀刻停止层9薄 /或第二波导层6，并且是当在第二波导层6中蚀刻特征时使其能够用作蚀刻停止的材料）

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