公开(公告)号：WO2006070946A1

公开(公告)日：2006-07-06

申请号：PCT/JP2005/024285

申请日：2005-12-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  UMEZAWA, Yoshio ,  OHSHIRO, Takahito

Inventor： UMEZAWA, Yoshio ,  OHSHIRO, Takahito

IPC: C12Q1/68 ,  G01N13/12 ,  G01N33/53 ,  G01N33/566

CPC classification number: G01Q60/16 ,  C12Q1/6816 ,  C12Q1/6869 ,  G01Q70/18 ,  Y10T436/143333 ,  C12Q2565/601

Abstract: A method is herein presented for analyzing nucleobases on a single molecular basis (a single molecule detection), which comprises scanning a molecular tip chemically modified with the complementary nucleobase on the nucleobases, and measuring the tunneling currents between the scanned nucleobases and the molecular tips with scanning tunneling microscopy.

Abstract translation: 本文提供了一种用于在单分子基础（单分子检测）上分析核碱基的方法，其包括扫描在核碱基上用互补核碱基化学修饰的分子末端，并测量扫描的核碱基与分子末端之间的隧道电流， 扫描隧道显微镜。

公开(公告)号：WO2005090294A2

公开(公告)日：2005-09-29

申请号：PCT/US2005/005426

申请日：2005-02-18

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  MOMIYAMA, Norie ,  TORII, Horimi ,  SAITO, Susumu ,  YAMAMOTO, Hisashi ,  YAMAMOTO, Yuhei

Inventor： MOMIYAMA, Norie ,  TORII, Horimi ,  SAITO, Susumu ,  YAMAMOTO, Hisashi ,  YAMAMOTO, Yuhei

IPC: C07C291/00

CPC classification number: C07C291/04 ,  C07C2601/14 ,  C07D207/16 ,  C07D211/74 ,  C07D309/30 ,  C07D317/72 ,  C07D403/04

Abstract: The present invention is directed to a process of making α-aminooxyketone and α-­hydroxyketone compounds. The synthetic pathway generally involves reacting an aldehyde or ketone substrate and a nitroso substrate in the presence of a catalyst of formula (IV), wherein X 1 -X 3 represent independently nitrogen, carbon, oxygen or sulfur and Z represents a 4 to 10-membered ring with or without a substituent and optionally a further step to convert the α-aminooxyketone compound formed to the α-hydroxyketone compound. The present invention results in α-aminooxyketone and α-hydroxyketone compounds with high enantioselectivity and high purity. The present invention is also directed to a catalytic asymmetric O-nitroso Aldol / Michael reaction. The substrates of this reaction are generally cyclic α,ß-unsaturated ketone substrate and a nitroso substrate. This methodology generally involves reacting the cyclic α,ß-unsaturated ketone substrate and the nitroso substrate in the presence of a proline-based catalyst, to provide a heterocyclic product.

Abstract translation: 本发明涉及制备α-氨基氧基酮和α-羟基酮化合物的方法。 合成途径通常包括在式（IV）催化剂存在下使醛或酮底物和亚硝基底物反应，其中X 1 -X 3独立地表示氮，碳，氧或硫，Z表示 具有或不具有取代基的4至10元环，以及任选的将形成的α-氨基氧基酮化合物转化成α-羟基酮化合物的另外步骤。 本发明产生具有高对映选择性和高纯度的α-氨基氧基酮和α-羟基酮化合物。 本发明还涉及催化不对称的O-亚硝基醛醇/迈克尔反应。 该反应的底物通常为环状α，β-不饱和酮底物和亚硝基。 该方法通常包括在脯氨酸催化剂存在下使环状α，β-不饱和酮底物和亚硝基底物反应，得到杂环产物。

公开(公告)号：WO2005054313A1

公开(公告)日：2005-06-16

申请号：PCT/JP2004/017905

申请日：2004-11-25

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  OKAMOTO, Yoshiyuki ,  KOIKE, Yasuhiro ,  LIU, Wei-Hong ,  GUO, Yinzhong

Inventor： OKAMOTO, Yoshiyuki ,  KOIKE, Yasuhiro ,  LIU, Wei-Hong ,  GUO, Yinzhong

IPC: C08F114/18

CPC classification number: C07D317/16 ,  C08F114/18

Abstract: A fluorinated polymer comprising an unit represented by the following formula (1), a methods for producing fluorinated compounds and the fluorinated polymers, and an optical/electrical material or coating material comprising the fluorinated polymer.

Abstract translation: 包含由下式（1）表示的单元的氟化聚合物，含氟化合物和氟化聚合物的制备方法以及包含氟化聚合物的光学/电气材料或涂料。

公开(公告)号：WO2004054710A1

公开(公告)日：2004-07-01

申请号：PCT/JP2002/013183

申请日：2002-12-17

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  WALSH, Dominic ,  ARCELLI, Laura ,  MANN, Stephen ,  IKOMA, Toshiyuki ,  TANKA, Junzo

Inventor： WALSH, Dominic ,  ARCELLI, Laura ,  MANN, Stephen ,  IKOMA, Toshiyuki ,  TANKA, Junzo

IPC: B01J23/50

CPC classification number: C01G49/02 ,  B01J23/50 ,  B01J23/52 ,  B01J23/745 ,  B01J23/8926 ,  B01J35/002 ,  B01J37/0018 ,  C01G1/02 ,  C01G23/047 ,  C01G49/08 ,  C01P2002/72

Abstract: The present invention provides a new metal or metal oxide porous material and a preparation method thereof, and more particularly concerns a new sponge-shaped noble metal, especially a silver porous material that is useful as a catalyst for an organic synthetic reaction such as an epoxidation reaction and partial oxidation reaction, and a functional material for electronic devices, heat dissipation and bacterial filtration and a preparation method thereof, as well as such a new silver catalyst.

Abstract translation: 本发明提供新的金属或金属氧化物多孔材料及其制备方法，更具体地涉及一种新的海绵状贵金属，特别是可用作有机合成反应如环氧化催化剂的银多孔材料 反应和部分氧化反应，以及电子器件的功能材料，散热和细菌过滤及其制备方法，以及这种新的银催化剂。

公开(公告)号：WO2008100505A1

公开(公告)日：2008-08-21

申请号：PCT/US2008/001844

申请日：2008-02-12

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  FARRELL, Robert, M. ,  SCHMIDT, Mathew, C. ,  KIM, Kwang, Choong ,  MASUI, Hisashi ,  FEEZELL, Daniel, F. ,  SPECK, James, S. ,  DENBAARS, Steven, P. ,  NAKAMURA, Shuji

Inventor： FARRELL, Robert, M. ,  SCHMIDT, Mathew, C. ,  KIM, Kwang, Choong ,  MASUI, Hisashi ,  FEEZELL, Daniel, F. ,  SPECK, James, S. ,  DENBAARS, Steven, P. ,  NAKAMURA, Shuji

IPC: H01L21/28

CPC classification number: H01S5/32341 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

Abstract: Optical gain of a nonpolar or semipolar Group-Ill nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

Abstract translation: 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。

公开(公告)号：WO2007149487A2

公开(公告)日：2007-12-27

申请号：PCT/US2007/014383

申请日：2007-06-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  HASHIMOTO, Tadao ,  SATO, Hitoshi ,  NAKAMURA, Shuji

Inventor： HASHIMOTO, Tadao ,  SATO, Hitoshi ,  NAKAMURA, Shuji

IPC: C30B23/06 ,  H01L29/04 ,  H01L33/00

CPC classification number: H01L29/045 ,  C30B7/10 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/16 ,  Y10S438/973 ,  Y10T117/1064

Abstract: A method for growing D3-V nitride films having an N-face or M-plane using an ammonotheπnal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane 3Gallium Nitride films and bulk GaN.

Abstract translation: 使用氨基生长技术生长具有N面或M面的D3-V氮化物膜的方法。 该方法包括使用高压釜，加热高压釜，并将氨引入高压釜中以产生平滑的N面或M面氮化镓镓膜和体GaN。

公开(公告)号：WO2007129418A1

公开(公告)日：2007-11-15

申请号：PCT/JP2006/320360

申请日：2006-10-05

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  KOIKE, Yasuhiro ,  OKAMOTO, Yoshiyuki ,  TAGAYA, Akihiro

Inventor： KOIKE, Yasuhiro ,  OKAMOTO, Yoshiyuki ,  TAGAYA, Akihiro

IPC: C08F220/12 ,  C08F220/22

CPC classification number: C08F220/18 ,  C08F220/24 ,  Y10T428/105

Abstract: ABSTRACT A copolymer of (meth)acrylic ester represented by a general formula (1) including a following repeating unit A and repeating unit B. In the general formula (1), R1 and R2 each independently represent hydrogen atom or methyl group; R3 represents an alkyl group having 1 to 4 carbon atoms; Y represents an atomic group forming an aromatic ring; x represents 1 to n, n represents the number of fluorine atoms which can be contained in the aromatic ring; and a and b each independently represent an integer of 1 or more.

Abstract translation: 摘要：由通式（1）表示的（甲基）丙烯酸酯的共聚物，其包含以下重复单元A和重复单元B.在通式（1）中，R 1和R 2各自独立地表示氢原子或甲基。 R3表示碳原子数1〜4的烷基。 Y表示形成芳环的原子团; x表示1〜n，n表示可以包含在芳香环中的氟原子数; a和b各自独立地表示1以上的整数。

公开(公告)号：WO2007084782A3

公开(公告)日：2007-07-26

申请号：PCT/US2007/001699

申请日：2007-01-19

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  KAEDING, John, F. ,  IZA, Michael ,  BAKER, Troy, J. ,  SATO, Hitoshi ,  HASKELL, Benjamin, A. ,  SPECK, James, S. ,  DENBAARS, Steven, P. ,  NAKAMURA, Shuji ,  LEE, Dong-Seon

Inventor： KAEDING, John, F. ,  IZA, Michael ,  BAKER, Troy, J. ,  SATO, Hitoshi ,  HASKELL, Benjamin, A. ,  SPECK, James, S. ,  DENBAARS, Steven, P. ,  NAKAMURA, Shuji ,  LEE, Dong-Seon

IPC: H01L21/365

Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In x Ga 1-x N nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the In x Ga 1x N nucleation layer, and cooling the substrate under a nitrogen overpressure.

公开(公告)号：WO2007027917A2

公开(公告)日：2007-03-08

申请号：PCT/US2006/034066

申请日：2006-08-31

Applicant: UNIVERSITY OF CHICAGO ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  ZHANG, Yanhua ,  YAMAMOTO, Hisashi

Inventor： ZHANG, Yanhua ,  YAMAMOTO, Hisashi

IPC: C07D417/02

CPC classification number: C07D207/34 ,  B01J21/18 ,  B01J31/1625 ,  B01J31/181 ,  B01J31/1815 ,  B01J31/38 ,  B01J2231/70 ,  B01J2531/824 ,  C07D213/22 ,  C07D307/78

Abstract: A practical and efficient method for halogenation of activated carbon atoms using readily available /V-haloimides and a Lewis acid catalyst has been disclosed. This methodology is applicable to a range of compounds and any halogen atom can be directly introduced to the substrate. The mild reaction conditions, easy workup procedure and simple operation make this method valuable from both an environmental and preparative point of view.

Abstract translation: 已经公开了使用容易获得的/ V-卤酰亚胺和路易斯酸催化剂来卤化活性碳原子的实用和有效的方法。 该方法适用于一系列化合物，任何卤素原子都可直接引入底物。 温和的反应条件，容易的处理程序和简单的操作使得该方法从环境和制备的角度都是有价值的。

公开(公告)号：WO2006130696A3

公开(公告)日：2006-12-07

申请号：PCT/US2006/021128

申请日：2006-06-01

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  FARRELL, Robert, M., Jr. ,  BAKER, Troy, J. ,  CHAKRABORTY, Arpan ,  HASKELL, Benjamin, A. ,  PATTISON, P., Morgan ,  SHARMA, Rajat ,  MISHRA, Umesh, K. ,  DENBAARS, Steven, P. ,  SPECK, James, S. ,  NAKAMURA, Shuji

Inventor： FARRELL, Robert, M., Jr. ,  BAKER, Troy, J. ,  CHAKRABORTY, Arpan ,  HASKELL, Benjamin, A. ,  PATTISON, P., Morgan ,  SHARMA, Rajat ,  MISHRA, Umesh, K. ,  DENBAARS, Steven, P. ,  SPECK, James, S. ,  NAKAMURA, Shuji

IPC: H01L21/28 ,  H01L21/3205

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.