公开(公告)号：WO2002089192A1

公开(公告)日：2002-11-07

申请号：PCT/IB2002/001411

申请日：2002-04-18

Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  KNOTTER, Dirk, M. ,  VAN WINGERDEN, Johannes ,  ROVERS, Madelon, G., J.

Inventor： KNOTTER, Dirk, M. ,  VAN WINGERDEN, Johannes ,  ROVERS, Madelon, G., J.

IPC: H01L21/311

CPC classification number: C09K13/08 ,  H01L21/0276 ,  H01L21/31111 ,  H01L21/67075 ,  H01L21/67086

Abstract: The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate (1) with a layer of silicon (3) thereon, an inorganic anti-reflective layer (4) applied to the layer of silicon (3), and a resist mask (6) applied to the inorganic anti-reflective layer (4), which method comprises the steps of, patterning the inorganic anti-reflective layer (4) by means of the resist mask (6), patterning the layer of silicon (3), removing the resist mask (6), and removing the inorganic anti-reflective layer (4) by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, which aqueous solution is applied at a high temperature.

Abstract translation: 本发明涉及一种制造半导体器件的方法，包括：在其上设置硅层（3）的衬底（1），施加到硅层（3）的无机抗反射层（4） 以及施加到无机抗反射层（4）上的抗蚀剂掩模（6），该方法包括以下步骤：通过抗蚀剂掩模（6）对无机抗反射层（4）进行图形化， 硅（3），除去抗蚀剂掩模（6），并通过用低浓度的氢氟酸的水溶液进行蚀刻除去无机抗反射层（4），该水溶液在高温下被施加。