12.
    发明专利
    未知

    公开(公告)号:DE4010889C2

    公开(公告)日:1992-09-03

    申请号:DE4010889

    申请日:1990-04-04

    Abstract: A method for manufacturing a buried heterostructure laser diode comprising an active layer and a clad layer which are formed as a reverse mesa on a substrate, current blocking layers and an insulation layer deposited on the top of the blocking layers, and an electrode formed on the top thereof comprising: a first step for forming a SiO2 stripe mask on the clad layer after a first liquid phase epitaxial growth of the active layer and the clad layer on the substrate, a second step for etching the clad layer under the SiO2 stripe mask using an etchant to form a reverse mesa structure, a third step for selectively etching the clad layer using an etchant such as a family of hydrochloric acid and then for making the active layer protrude, and a fourth step for naturally melthig back the protruded porting of the active layer surface during the second epitaxial growth process is provided.

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