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    OPTICAL MATERIALS WITH SELECTED INDEX-OF-REFRACTION
    13.
    发明申请
    OPTICAL MATERIALS WITH SELECTED INDEX-OF-REFRACTION 审中-公开
    具有选择的折射率的光学材料

    公开(公告)号：WO02057812A2

    公开(公告)日：2002-07-25

    申请号：PCT/US0201702

    申请日：2002-01-17

    Applicant: NANOGRAM CORP ,  BRYAN MICHAEL A ,  KAMBE NOBUYUKI

    Inventor： BRYAN MICHAEL A ,  KAMBE NOBUYUKI

    IPC: G02B6/124 ,  G02B6/125 ,  G02B6/13 ,  G02B

    CPC classification number: G02B6/13 ,  G02B6/124 ,  G02B6/125 ,  Y10T428/25

    Abstract: Photosensitive optical materials are used for establishing more versatile approaches for optical device formation. In some embodiments, unpatterned light (404) is used to shift the index-of-refraction of planar optical structures (400) to shift the index-of-refraction of the photosensitive material (402) to a desired value. This approach can be effective to produce cladding material with a selected index-of-refraction. In additional embodiments gradients in index-of-refraction are formed using photosensitive materials. In additional embodiments gradient in index-of-refraction are formed using photosensitive materials. In further embodiments, the photosensitive materials are patterned within the planar optical structure. Irradiation of the photosensitive material can selectively shift the index-of-refraction of the patterned photosensitive material. By patterning the light used used to irradiate the patterned photosensitive material, different optical devices can be selectively activated within the optical structure.

    Abstract translation: 光敏光学材料用于建立用于光学器件形成的更通用的方法。 在一些实施例中，未图案化的光（404）用于移动平面光学结构（400）的折射率以将感光材料（402）的折射率偏移到期望值。 这种方法可以有效地生产具有选定的折射率的包层材料。 在另外的实施例中，使用光敏材料形成折射率折射率。 在另外的实施例中，使用光敏材料形成折射率梯度。 在另外的实施例中，感光材料在平面光学结构内图案化。 感光材料的照射可以选择性地移动图案化感光材料的折射率。 通过图案化用于照射图案化感光材料的光，可以在光学结构内选择性地激活不同的光学器件。

    SILICON SUBSTRATES WITH DOPED SURFACE CONTACTS FORMED FROM DOPED SILICON INKS AND CORRESPONDING PROCESSES
    14.
    发明申请
    SILICON SUBSTRATES WITH DOPED SURFACE CONTACTS FORMED FROM DOPED SILICON INKS AND CORRESPONDING PROCESSES 审中-公开
    硅基材料由多孔硅油墨形成的表面接触和相应的工艺

    公开(公告)号：WO2012106137A3

    公开(公告)日：2012-10-18

    申请号：PCT/US2012022215

    申请日：2012-01-23

    Applicant: NANOGRAM CORP ,  LIU GUOJUN ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR

    Inventor： LIU GUOJUN ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR

    IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

    CPC classification number: H01L21/2252 ,  B82Y30/00 ,  H01L21/2225 ,  H01L21/228 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    Abstract: The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells.

    Abstract translation: 如果提供合适的帽，则使用掺杂硅纳米粒子墨水和其他液体掺杂剂源可以提供合适的掺杂剂源，用于使用热过程将掺杂剂元素驱动到晶体硅衬底中。 合适的盖子包括例如盖板，可以或不可以搁置在基底表面上的盖子和覆盖层。 可以实现期望的掺杂剂轮廓。 掺杂的纳米粒子可以使用硅油墨输送。 在掺杂剂推入之后或者至少部分致密化为结合到产品装置中的硅材料之后，可以去除残留的硅油墨。 硅掺杂适合于将掺杂剂引入晶体硅中以形成太阳能电池。

    PHOTOVOLTAIC STRUCTURES PRODUCED WITH SILICON RIBBONS
    15.
    发明申请
    PHOTOVOLTAIC STRUCTURES PRODUCED WITH SILICON RIBBONS 审中-公开
    用硅树脂制作的光伏结构

    公开(公告)号：WO2011062975A3

    公开(公告)日：2011-09-09

    申请号：PCT/US2010057011

    申请日：2010-11-17

    Applicant: NANOGRAM CORP ,  CHIRUVOLU SHIVKUMAR ,  PAKALA NEERAJ ,  FERGUSON SCOTT ,  DRAIN KIERAN

    Inventor： CHIRUVOLU SHIVKUMAR ,  PAKALA NEERAJ ,  FERGUSON SCOTT ,  DRAIN KIERAN

    IPC: H01L31/18 ,  H01L31/042

    CPC classification number: H01L31/1804 ,  C30B15/007 ,  C30B15/04 ,  C30B15/24 ,  C30B25/00 ,  C30B29/06 ,  H01L31/042 ,  H01L31/048 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Photovoltaic elements can be formed by in-motion processing of a silicon ribbon. In some embodiments, only a single surface of a silicon ribbon is processed in-motion. In other embodiments both surfaces of a silicon ribbon is processed in-motion. In-motion processing can include, but is not limited to, formation of patterned or uniform doped regions within or along the silicon ribbon as well as the formation of patterned or uniform dielectric layers and/or electrically conductive elements on the silicon ribbon. After performing in-motion processing, additional processing steps can be performed after the ribbon is cut into portions. Furthermore, post-cut processing can include, but is not limited to, the formation of solar cells, photovoltaic modules, and solar panels.

    Abstract translation: 光伏元件可以通过对硅带进行移动处理而形成。 在一些实施例中，硅带的仅一个表面在运动中被处理。 在其他实施例中，硅带的两个表面都在运动中处理。 运动中处理可以包括但不限于在硅带内或沿着硅带形成图案化或均匀的掺杂区以及在硅带上形成图案化或均匀介电层和/或导电元件。 在执行动态处理之后，可以在将带切成部分之后执行额外的处理步骤。 此外，后切处理可以包括但不限于太阳能电池，光伏模块和太阳能电池板的形成。

    METAL PATTERNING FOR ELECTRICALLY CONDUCTIVE STRUCTURES BASED ON ALLOY FORMATION
    16.
    发明申请
    METAL PATTERNING FOR ELECTRICALLY CONDUCTIVE STRUCTURES BASED ON ALLOY FORMATION 审中-公开
    基于合金形成的导电结构的金属图案

    公开(公告)号：WO2010135178A3

    公开(公告)日：2011-02-03

    申请号：PCT/US2010034860

    申请日：2010-05-14

    Applicant: NANOGRAM CORP ,  SRINIVASAN UMA ,  PAKALA NEERAJ ,  SANDERS WILLIAM A ,  HIESLMAIR HENRY

    Inventor： SRINIVASAN UMA ,  PAKALA NEERAJ ,  SANDERS WILLIAM A ,  HIESLMAIR HENRY

    IPC: H01L31/042 ,  H01L31/18

    CPC classification number: C22F1/00 ,  C21D1/34 ,  H01L21/32134 ,  H01L27/124 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y10T428/12396

    Abstract: Layered metal structures are patterned to form a surface with some locations having an alloy along the top surface at some locations and the original top metal layer at other locations along the surface. The alloy and original top metal layer can be selected to have differential etching properties such that the pattern of the alloy or original metal can be selectively etched to form a patterned metal interconnect. In general, the patterning is performed by localized heating that drives formation of the alloy at the heated locations. The metal patterning can be useful for solar cell applications as well as for electronics applications, such as display applications.

    Abstract translation: 层状金属结构被图案化以形成表面，其中一些位置在某些位置处具有沿着顶表面的合金，并且沿表面的其它位置具有原始顶部金属层。 可以选择合金和原始顶部金属层以具有差异蚀刻性质，使得可以选择性地蚀刻合金或原始金属的图案以形成图案化的金属互连。 通常，图案化是通过局部加热进行的，其驱动在加热位置形成合金。 金属图案化可用于太阳能电池应用以及电子应用，例如显示器应用。

    ZONE MELT RECRYSTALLIZATION FOR INORGANIC FILMS
    18.
    发明申请
    ZONE MELT RECRYSTALLIZATION FOR INORGANIC FILMS 审中-公开
    无机膜的区域熔融再结晶

    公开(公告)号：WO2009094124A2

    公开(公告)日：2009-07-30

    申请号：PCT/US2009000301

    申请日：2009-01-16

    Applicant: NANOGRAM CORP ,  HIESLMAIR HENRY ,  MOSSO RONALD J

    Inventor： HIESLMAIR HENRY ,  MOSSO RONALD J

    IPC: H01L21/20

    CPC classification number: C30B13/14 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52

    Abstract: ZMR apparatuses provide for controlled temperature flow through the system to reduce energy consumption while providing for desired crystal growth properties. The apparatus can include a cooling system to specifically remove a desired amount of heat from a melted film to facilitate crystallization. Furthermore, the apparatus can have heated walls to create a background temperature within the chamber that reduces energy use through the reduction or elimination of cooling for the chamber walls. The apparatuses and corresponding methods can be used with inorganic films directly or indirectly associated with a porous release layer that provides thermal insulation with respect to an underlying substrate. If the recrystallized film is removed from the substrate, the substrates can be reused. The methods can be used for large area silicon films with thicknesses from 2 microns to 100 microns, which are suitable for photovoltaic applications as well as electronics applications.

    Abstract translation: ZMR装置提供通过系统的受控温度流动以降低能量消耗，同时提供期望的晶体生长特性。 该装置可以包括冷却系统以从熔融的膜特异性地除去所需量的热量以促进结晶。 此外，该装置可以具有加热的壁以在腔室内产生背景温度，通过减少或消除室壁的冷却来减少能量消耗。 这些装置和相应的方法可以与与提供相对于下面的基底的热绝缘的多孔释放层直接或间接相关联的无机膜一起使用。 如果从衬底去除重结晶膜，则可以重新使用衬底。 该方法可用于厚度为2微米至100微米的大面积硅膜，适用于光伏应用以及电子应用。

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