公开(公告)号：US07015504B2

公开(公告)日：2006-03-21

申请号：US10699903

申请日：2003-11-03

Applicant: Christopher F. Lyons ,  Mark S. Chang ,  Sergey D. Lopatin ,  Ramkumar Subramanian ,  Patrick K. Cheung ,  Minh V. Ngo ,  Jane V. Oglesby

Inventor： Christopher F. Lyons ,  Mark S. Chang ,  Sergey D. Lopatin ,  Ramkumar Subramanian ,  Patrick K. Cheung ,  Minh V. Ngo ,  Jane V. Oglesby

IPC: H01L47/00 ,  H01L29/06 ,  H01L35/24 ,  H01L51/00

CPC classification number: G11C11/5664 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L27/285 ,  H01L51/0595

Abstract: Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side wall memory cells can have a bit line of the wafer as the first electrode and operate with a second formed electrode to activate a portion of an organic matter that is formed there between.

Abstract translation: 公开了用于增加与光刻特征相关联的存储单元的数量的系统和方法。 这些系统包括通过采用各种沉积和蚀刻工艺在光刻特征的侧壁上形成的记忆元件。 侧壁存储单元可以具有作为第一电极的晶片的位线，并且与第二形成的电极一起操作以激活在其间形成的有机物的一部分。

公开(公告)号：US07011762B1

公开(公告)日：2006-03-14

申请号：US10419534

申请日：2003-04-21

Applicant: Christopher F. Lyons ,  Ramkumar Subramanian ,  Steven C. Avanzino

Inventor： Christopher F. Lyons ,  Ramkumar Subramanian ,  Steven C. Avanzino

IPC: C23F1/00 ,  G01R31/00

CPC classification number: H01L21/3212 ,  H01L21/32051 ,  H01L21/32136 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One aspect of the present invention relates to a wafer containing a semiconductor substrate, at least one metal layer formed over the semiconductor substrate, and at least one electrical sensor embedded at least one of on and in the wafer to facilitate real time monitoring of the metal layer as it progresses through a subtractive metallization process. Another aspect of the present relates to a system and method for monitoring a subtractive metallization process in real time in order to effectuate an immediate response in the on-going process. The system contains a wafer comprising at least one metal layer formed on a semiconductor substrate, at least one electrical sensor in contact with the wafer and operable to detect and transmit electrical activity associated with the wafer, and an electrical measurement station operable to process electrical activity detected and received from the electrical sensor for monitoring a subtractive metallization process in real-time.

Abstract translation: 本发明的一个方面涉及包含半导体衬底的晶片，在半导体衬底上形成的至少一个金属层和至少一个嵌入在晶片内和晶片中的至少一个的电传感器，以便于金属的实时监测 当它通过减色金属化过程进行时。 本发明的另一方面涉及一种用于实时监测减色金属化过程以便在持续过程中实现立即响应的系统和方法。 该系统包含晶片，该晶片包括形成在半导体衬底上的至少一个金属层，与晶片接触的至少一个电传感器，其可操作以检测和传输与晶片相关的电活动;以及电测量站，可操作以处理电活动 从电传感器检测和接收，用于实时监测减色金属化处理。

公开(公告)号：US06999254B1

公开(公告)日：2006-02-14

申请号：US10967845

申请日：2004-10-18

Applicant: Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

Inventor： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC: G02B7/00

CPC classification number: G03F7/70341

Abstract: A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.

Abstract translation: 公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。 已知的光栅结构被构建在衬底上。 折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

公开(公告)号：US06878622B1

公开(公告)日：2005-04-12

申请号：US10612554

申请日：2003-07-01

Applicant: Wenge Yang ,  Ramkumar Subramanian ,  Fei Wang ,  Lewis Shen

Inventor： Wenge Yang ,  Ramkumar Subramanian ,  Fei Wang ,  Lewis Shen

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/60 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/44

CPC classification number: H01L21/76897 ,  H01L21/0276 ,  H01L21/31116 ,  H01L2924/3011

Abstract: A method is provided for manufacturing a semiconductor device on a semiconductor substrate using a dielectric as a bottom anti-reflective coating for formation of a photoresist contact opening which is used to enlarge the Final Inspection Critical Dimension (FICD) of the conductive contact. A high selectivity etch is used to form a tapered contact.

Abstract translation: 提供了一种用于在半导体衬底上制造半导体器件的方法，该半导体衬底使用电介质作为用于形成光刻胶接触开口的底部抗反射涂层，用于扩大导电触点的最终检查临界尺寸（FICD）。 使用高选择性蚀刻来形成锥形接触。

公开(公告)号：US20050045877A1

公开(公告)日：2005-03-03

申请号：US10951370

申请日：2004-09-28

Applicant: Christopher Lyons ,  Ramkumar Subramanian ,  Mark Chang

Inventor： Christopher Lyons ,  Ramkumar Subramanian ,  Mark Chang

IPC: G11C11/56 ,  G11C13/02 ,  H01L27/28 ,  H01L51/00

CPC classification number: H01L27/285 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/025 ,  G11C13/04 ,  Y10S977/943

Abstract: A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer that contains a photosensitive compound. The organic semiconductor layer is formed into memory cells using patterning techniques.

Abstract translation: 公开了一种由在两个电极之间具有可控导电介质的两个电极制成的有机存储单元的方法。 可控导电介质包含含有光敏化合物的有机半导体层。 使用图案化技术将有机半导体层形成为存储单元。

公开(公告)号：US06828162B1

公开(公告)日：2004-12-07

申请号：US09894434

申请日：2001-06-28

Applicant: Arvind Halliyal ,  Bhanwar Singh ,  Michael K. Templeton ,  Ramkumar Subramanian

Inventor： Arvind Halliyal ,  Bhanwar Singh ,  Michael K. Templeton ,  Ramkumar Subramanian

IPC: H01L2100

CPC classification number: H01L21/67253 ,  G01N21/4738 ,  H01L21/02129 ,  H01L21/31625

Abstract: A system for monitoring and controlling a boron phosphorous doped silicon oxide (BPSG) deposition and reflow process is provided. The system includes one or more light sources, each light source directing light to one or more portions of a wafer upon which BPSG is deposited. Light reflected from the BPSG is collected by a measuring system, which processes the collected light. Light passing through the BPSG may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the conformality of the BPSG deposition of the respective portions of the wafer. The measuring system provides BPSG deposition related data to a processor that determines the BPSG deposition of the respective portions of the wafer. The system also includes a plurality of reflow controlling devices, each such device corresponding to a respective portion of the wafer and providing for the heating and/or cooling thereof. The processor selectively controls the reflow controlling devices so as to regulate temperature of the respective portions of the wafer.

Abstract translation: 提供了一种用于监测和控制硼磷掺杂氧化硅（BPSG）沉积和回流工艺的系统。 该系统包括一个或多个光源，每个光源将光引导到沉积BPSG的晶片的一个或多个部分。 从BPSG反射的光被测量系统收集，该系统处理收集的光。 通过BPSG的光可以类似地由处理所收集的光的测量系统收集。 所收集的光表示晶片的各个部分的BPSG沉积的一致性。 测量系统将BPSG沉积相关数据提供给确定晶片各部分的BPSG沉积的处理器。 该系统还包括多个回流控制装置，每个这样的装置对应于晶片的相应部分并提供加热和/或冷却。 处理器选择性地控制回流控制装置，以便调节晶片各部分的温度。

公开(公告)号：US06825060B1

公开(公告)日：2004-11-30

申请号：US10405272

申请日：2003-04-02

Applicant: Christopher F. Lyons ,  Ramkumar Subramanian ,  Mark S. Chang

Inventor： Christopher F. Lyons ,  Ramkumar Subramanian ,  Mark S. Chang

IPC: H01L2100

CPC classification number: H01L27/285 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/025 ,  G11C13/04 ,  Y10S977/943

Abstract: A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer that contains a photosensitive compound. The organic semiconductor layer is formed into memory cells using patterning techniques.

Abstract translation: 公开了一种由在两个电极之间具有可控导电介质的两个电极制成的有机存储单元的方法。 可控导电介质包含含有光敏化合物的有机半导体层。 使用图案化技术将有机半导体层形成为存储单元。

公开(公告)号：US06809793B1

公开(公告)日：2004-10-26

申请号：US10050456

申请日：2002-01-16

Applicant: Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

Inventor： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

IPC: G03B2752

CPC classification number: G03F7/70558 ,  G03F7/70875

Abstract: A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.

Abstract translation: 公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。 一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。 所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

公开(公告)号：US06771374B1

公开(公告)日：2004-08-03

申请号：US10050758

申请日：2002-01-16

Applicant: Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Ramkumar Subramanian

Inventor： Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Ramkumar Subramanian

IPC: G01N2155

CPC classification number: G01N21/211 ,  G01B11/0675 ,  G01N21/4738 ,  G01N21/9501 ,  Y10T428/21

Abstract: A system and method are disclosed for monitoring characteristics of a rotating substrate. As the substrate rotates in an environment, an incident light beam is emitted onto the substrate near an axis about which the substrate rotates. The emission of the incident beam is controlled as a function of the angular orientation of the substrate, so that the incident beam selectively interrogates a central region of the substrate to facilitate measuring and/or inspecting characteristics of the substrate.

Abstract translation: 公开了一种用于监测旋转衬底的特性的系统和方法。 当衬底在环境中旋转时，入射光束在衬底旋转的轴附近被发射到衬底上。 入射光束的发射被控制为衬底的角度取向的函数，使得入射光束选择性地询问衬底的中心区域以便于测量和/或检查衬底的特性。

公开(公告)号：US06746973B1

公开(公告)日：2004-06-08

申请号：US10212985

申请日：2002-08-05

Applicant: Catherine B. Labelle ,  Ernesto Gallardo ,  Ramkumar Subramanian ,  Jacques Bertrand

Inventor： Catherine B. Labelle ,  Ernesto Gallardo ,  Ramkumar Subramanian ,  Jacques Bertrand

IPC: H01L21302

CPC classification number: G03F7/16 ,  G03F7/091 ,  H01L21/3105 ,  H01L21/31144

Abstract: One aspect of the present invention relates to a system and method for mitigating surface abnormalities on a semiconductor structure. The method involves exposing the layer to a first plasma treatment in order to mitigate surface interactions between the layer and a subsequently formed photoresist without substantially etching the layer, the first plasma comprising oxygen and nitrogen; forming a patterned photoresist over the treated layer, the patterned photoresist being formed using 193 nm or lower radiation; and etching the treated layer through openings of the patterned photoresist. The system and method also includes a monitor processor for determining whether the plasma treatment has been administered and for adjusting the plasma treatment components. The monitor processor transmits a pulse, receives a reflected pulse response and analyzes the response. An optional second plasma treatment comprising nitrogen and hydrogen may be administered after the first plasma treatment but before forming the photoresist.

Abstract translation: 本发明的一个方面涉及一种用于减轻半导体结构上的表面异常的系统和方法。 该方法包括将层暴露于第一等离子体处理，以便减轻层与随后形成的光致抗蚀剂之间的表面相互作用，而基本上不蚀刻该层，第一等离子体包含氧和氮; 在处理的层上形成图案化的光致抗蚀剂，使用193nm或更低的辐射形成图案化的光致抗蚀剂; 并通过图案化光致抗蚀剂的开口蚀刻处理层。 该系统和方法还包括用于确定等离子体处理是否已被施用并用于调整等离子体处理组件的监视器处理器。 监视器处理器发送脉冲，接收反射的脉冲响应并分析响应。 包括氮和氢的任选的第二等离子体处理可以在第一等离子体处理之后但在形成光致抗蚀剂之前施用。