Light emitting diode of ac drive type
    16.
    发明专利
    Light emitting diode of ac drive type 有权
    交流驱动型发光二极管

    公开(公告)号:JP2014112721A

    公开(公告)日:2014-06-19

    申请号:JP2014037340

    申请日:2014-02-27

    Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode of an AC drive type comprising an electrode structure capable of uniformly dispersing current flowing at operation of the light emitting diode and improving light efficiency.SOLUTION: A light emitting diode of an AC drive type comprises: a substrate; and at least one series array where a plurality of light emitting cells is linked in series on the substrate. The light emitting cell comprises: a lower semiconductor layer; an upper semiconductor layer; an active layer; an upper electrode layer; an upper electrode pad formed on the upper electrode layer; and a lower electrode. The upper electrode pad and the lower electrode are disposed on diagonal corner portions, respectively. Each light emitting cell is arranged such that arrangement of the upper electrode pad and the lower electrode has a mutually symmetrical structure with respect to an adjacent light emitting cell, respectively.

    Abstract translation: 要解决的问题:提供一种AC驱动型发光二极管,其包括能够均匀地分散在发光二极管的工作时流动的电流并提高光效率的电极结构。解决方案:AC驱动型的发光二极管包括 :底物 以及至少一个串联阵列,其中多个发光单元串联在基板上。 发光单元包括:下半导体层; 上半导体层; 活性层 上电极层; 形成在上电极层上的上电极焊盘; 和下电极。 上电极焊盘和下电极分别设置在对角角部上。 每个发光单元被布置成使得上电极焊盘和下电极的布置分别相对于相邻的发光单元具有相互对称的结构。

    Light-emitting device and manufacturing method therefor
    17.
    发明专利
    Light-emitting device and manufacturing method therefor 审中-公开
    发光装置及其制造方法

    公开(公告)号:JP2014112713A

    公开(公告)日:2014-06-19

    申请号:JP2014022820

    申请日:2014-02-07

    Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting element enhancing the luminous efficiency and luminance in a nitride-based semiconductor light-emitting element, and to provide a manufacturing method therefor.SOLUTION: An n-type semiconductor layer 120, an active layer 130, and a p-type semiconductor layer 140 are formed on a substrate 110, a portion of the n-type semiconductor layer is exposed by removing a portion of the p-type semiconductor layer and the active layer, so as to have at least one slope continuously from the p-type semiconductor layer to the active layer while having a gradient for the horizontal plane, a p-type metal bump 155 is formed above the p-type semiconductor layer, an n-type metal bump 150 is formed on the n-type semiconductor layer exposed, a p-type bonding pad 215 and an n-type bonding pad 210 are formed on a sub-mount substrate 200, flip-chip bonding is performed so that the p-type metal bump and n-type metal bump, and the p-type bonding pad and n-type bonding pad, are connected respectively, and then the substrate subjected to flip-chip bonding, and the sub-mount substrate are cut for each light-emitting element.

    Abstract translation: 要解决的问题:提供一种提高氮化物系半导体发光元件的发光效率和亮度的发光元件,并提供其制造方法。解决方案:n型半导体层120,有源层 130和p型半导体层140形成在基板110上,通过去除p型半导体层和有源层的一部分来露出n型半导体层的一部分,以至少具有 一个斜率从p型半导体层连续到有源层,同时具有用于水平面的梯度,p型金属凸块155形成在p型半导体层的上方,n型金属凸块150形成在 露出的n型半导体层,p型接合焊盘215和n型焊盘210形成在副安装基板200上,进行倒装芯片接合,使得p型金属凸块和n- 型金属凸块,以及p型接合垫和n型凸点 鼎垫,分别连接,然后进行倒装芯片接合的基板,并且对于每个发光元件切割副安装基板。

    Light-emitting element and method of manufacturing the same
    18.
    发明专利
    Light-emitting element and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号:JP2014096592A

    公开(公告)日:2014-05-22

    申请号:JP2013232542

    申请日:2013-11-08

    Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting element capable of improving light efficiency as well as improving current dispersion performance.SOLUTION: A light-emitting element includes a first-conductivity-type semiconductor layer 130 located above a substrate 110, an active layer 140 located on the first-conductivity-type semiconductor layer 130, a second-conductivity-type semiconductor layer 150 located on the active layer 140, and an irregular uneven pattern 190 located on a surface of the first-conductivity-type semiconductor layer 130 in which a part of the active layer 140 and the second-conductivity-type semiconductor layer 150 is etched and exposed. The irregular uneven pattern 190 has convex portions and concave portions; the convex portions have irregular heights and the concave portions have irregular depths.

    Abstract translation: 要解决的问题:提供能够提高光效率以及提高电流分散性能的发光元件。解决方案:发光元件包括位于基板110上方的第一导电型半导体层130,活性物质 位于第一导电型半导体层130上的层140,位于有源层140上的第二导电型半导体层150和位于第一导电类型半导体层130的表面上的不规则凹凸图案190 其中有源层140和第二导电类型半导体层150的一部分被蚀刻和暴露。 不规则凹凸图案190具有凸部和凹部; 凸部具有不规则的高度,并且凹部具有不规则的深度。

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