公开(公告)号：EP2319088A1

公开(公告)日：2011-05-11

申请号：EP09763666.6

申请日：2009-06-11

Applicant: Solar Implant Technologies Inc.

Inventor： ADIBI, Babak ,  MURRER, Edward, S.

IPC: H01L31/0368 ,  H01L31/0376

CPC classification number: H01L21/266 ,  H01L21/26513 ,  H01L31/022425 ,  H01L31/072 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of forming a solar cell, the method comprising: providing a semiconducting wafer having a pre-doped region; performing a first ion implantation of a dopant into the semiconducting wafer to form a first doped region over the pre-doped region, wherein the first ion implantation has a concentration-versus-depth profile; and performing a second ion implantation of a dopant into the semiconducting wafer to form a second doped region over the pre-doped region, wherein the second ion implantation has a concentration-versus-depth profile different from that of the first ion implantation, wherein at least one of the first doped region and the second doped region is configured to generate electron-hole pairs upon receiving light, and wherein the first and second ion implantations are performed independently of one another.