PLAY MUTE CIRCUIT AND METHOD
    11.
    发明公开

    公开(公告)号:EP4280458A1

    公开(公告)日:2023-11-22

    申请号:EP23170986.6

    申请日:2023-05-02

    Abstract: In an embodiment, an amplifier circuit includes a second stage (322) that includes a first switch circuit (330) including first and second terminals, a plurality of resistive elements (340, 350) coupled between the first and second terminals of the first switch circuit, and a plurality of switches (342, 352) configured to control an equivalent resistance between the first and second terminals of the first switch circuit. During play mode, the second stage (322) has a gain between the input of the second stage and the output of the second stage of a first value. During a transition from mute mode to play mode, the amplifier circuit is configured to progressively increase the gain of the second stage (322) from a second value to the first value. During a transition from play mode to mute mode, the amplifier circuit is configured to progressively decrease the gain of the second stage (322) from the first value to the second value.

    CLIFF DETECTION IN ROBOTIC DEVICES
    12.
    发明公开

    公开(公告)号:EP4273583A1

    公开(公告)日:2023-11-08

    申请号:EP23167777.4

    申请日:2023-04-13

    Abstract: A method of operating a robotic device includes: moving (402) the robotic device towards an edge of a cliff while a ToF sensor senses reflected signals having been transmitted by the ToF sensor, the reflected signals being generated by the signals transmitted by the ToF sensor being reflected off a target object back to the ToF sensor, the ToF sensor being attached to a front of the robotic device and including an array of single-photon avalanche diode, SPAD, sensors; comparing (404) a statistical distribution of the reflected signals received at a plurality of different rows of zones configured by the array of SPADs in a region of interest, ROI, of the ToF sensor and based on the comparing detecting (406) an approaching of the edge of the cliff; and in response to detecting the approaching of the edge, changing a propulsion of the robotic device before reaching the edge.

    WIRELESS CHARGING
    13.
    发明公开
    WIRELESS CHARGING 审中-公开

    公开(公告)号:EP3940917A1

    公开(公告)日:2022-01-19

    申请号:EP21185893.1

    申请日:2021-07-15

    Inventor: WANG, Jiasheng

    Abstract: A system and method for improving ASK packet transfer reliability and power dissipation efficiency at light-load or no-load conditions of a receiving device is provided. In an embodiment, the receiving device includes a dissipating element coupled to a rectifier. The dissipating element is connected to a reference voltage at a first duration corresponding to a transmission of the ASK packet. The dissipating element is disconnected from the reference voltage a second duration corresponding to an end of the transmission of the ASK packet.

    INVERTER AND METHOD TO MEASURE JUNCTION TEMPERATURE FOR THERMAL PROTECTION

    公开(公告)号:US20230400359A1

    公开(公告)日:2023-12-14

    申请号:US17836817

    申请日:2022-06-09

    CPC classification number: G01K7/01 G01K7/183 G01K3/005

    Abstract: A three-phase load is powered by an SPWM driven inverter having a single shunt-topology. During operation, drain-to-source resistances of transistors of each branch of the inverter are determined. Interpolation is performed on assumed drain-to-source resistances of the transistors for different temperatures to produce a non-linear model of drain-to-source resistance to temperature for the transistors, and the drain-to-source resistances determined during operation and the non-linear model are used to estimate temperature values of the transistors. Driving of the inverter can be adjusted so that conductivity of each branch is set so that power delivered by that branch is as high as possible without exceeding an allowed drain current threshold representing a threshold junction temperature. In addition, driving of the inverter can be ceased if the temperature of a transistor exceeds the threshold temperature.

    TOUCHSCREEN
    16.
    发明公开
    TOUCHSCREEN 审中-公开

    公开(公告)号:US20230266845A1

    公开(公告)日:2023-08-24

    申请号:US17677119

    申请日:2022-02-22

    CPC classification number: G06F3/0418 G06F3/0446 G06F3/0412 G06F3/0447

    Abstract: A method for operating an electronic device includes detecting, by a touchscreen controller, a touch point on a touchscreen; determining, by the touchscreen controller, coordinates of the touch point; scaling, by the touchscreen controller, up the coordinates of the touch point to obtain scaled up coordinates by overwriting a reserved portion of a touch event protocol with additional information corresponding to the coordinates of the touch point; reporting, by the touchscreen controller, the scaled up coordinates of the touch point to an application processor; and determining, by the application processor, the coordinates of the touch point with an increased resolution by converting the scaled up coordinates into a floating point value.

    INVERTER AND METHOD FOR MEASURING PHASE CURRENTS IN AN ELECTRIC MACHINE

    公开(公告)号:US20220214384A1

    公开(公告)日:2022-07-07

    申请号:US17378226

    申请日:2021-07-16

    Abstract: A three-phase load is powered by a PWM (e.g., SVPWM) driven DC-AC inverter having a single shunt-topology. A shunt voltage and a branch voltage of the inverter (across a transistor to be calibrated) are measured during a second period of each SVPWM sector, and the drain-to-source resistance of the calibrated transistor is calculated. During the fourth period of each SVPWM sector, the branch voltage is measured again, and another branch voltage across another transistor is measured. Using the drain-to-source resistance of the calibrated transistor and the voltage across the calibrated transistor measured during the fourth period, the phase current through the calibrated transistor is calculated. Using the other branch voltage measured during the fourth period and the drain-to-source resistance of its corresponding transistor (known from a prior SVPWM sector), the phase current through that transistor is calculated. From the two calculated phase currents, the other phase current can be calculated.

    PWM DRIVING CIRCUIT AND METHOD
    18.
    发明申请

    公开(公告)号:US20220173706A1

    公开(公告)日:2022-06-02

    申请号:US17107269

    申请日:2020-11-30

    Abstract: In an embodiment, a method for shaping a PWM signal includes: receiving an input PWM signal; generating an output PWM signal based on the input PWM signal by: when the input PWM signal transitions with a first edge of the input PWM signal, transitioning the output PWM signal with a first edge of the output PWM signal; and when the input PWM signal transitions with a second edge before the first edge of the output PWM signal transitions, delaying a second edge of the output PWM signal based on the first edge of the output PWM signal.

    DEGLITCHING CIRCUIT AND METHOD IN A CLASS-D AMPLIFIER

    公开(公告)号:US20210203293A1

    公开(公告)日:2021-07-01

    申请号:US17200490

    申请日:2021-03-12

    Abstract: In an embodiment, a class-D amplifier includes an input terminal configured to receive an input signal; a comparator having an input coupled to the input terminal; a deglitching circuit having an input coupled to an output of the comparator; and a driving circuit having an input coupled to an output of the deglitching circuit. The deglitching circuit includes a logic circuit coupled between the input of the deglitching circuit and the output of the deglitching circuit. The logic circuit is configured to receive a clock signal having the same frequency as the switching frequency of the class-D amplifier.

    Current sensing circuit and method
    20.
    发明授权

    公开(公告)号:US10935592B2

    公开(公告)日:2021-03-02

    申请号:US16057089

    申请日:2018-08-07

    Abstract: A circuit includes a field effect transistor having a gate driven via a drive signal. The field effect transistor has a drain-source voltage drop indicative of the intensity of a current flowing in the current path through the field effect transistor. The circuit also includes a pair of sensing transistors that include a first sensing field effect transistor arranged with its drain and gate coupled with the drain and the gate of the field effect transistor, respectively, and a second sensing field effect transistor having a gate configured for receiving a replica of the drive signal. The second sensing field effect transistor is arranged with its current path in series with the current path of the first sensing field effect transistor. A sensing signal at a sensing node is indicative of the current intensity flowing in the current path of the field effect transistor.

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