公开(公告)号：WO2011026670A2

公开(公告)日：2011-03-10

申请号：PCT/EP2010059649

申请日：2010-07-06

Applicant: G & R TECHNOLOGY GROUP AG ,  STOECKLINGER ROBERT

Inventor： STOECKLINGER ROBERT

IPC: C01B33/035

CPC classification number: B01J19/0006 ,  B01J4/002 ,  B01J19/24 ,  B01J2219/00006 ,  B01J2219/0004 ,  B01J2219/00094 ,  B01J2219/00202 ,  C01B33/035 ,  G01N30/88 ,  G01N2030/8886

Abstract: The invention relates to an installation and a method for the production of polycrystalline silicon in a monosilane process. The installation comprises at least one reactor (10), at least one converter (20), at least one injection reservoir (30) and at least one evaporator (40). Every reactor (10) has a feed line (11a) for a fresh gas mixture and a discharge line (41) for the partially consumed gas mixture. Every converter (20) has a feed line (41) for a gas mixture and every evaporator (40) has a discharge line (41) for a gas mixture. The installation further comprises a plurality of sampling elements (7) for test samples in the feed line (11a) and the discharge line (11b) of every reactor (10) and in the discharge line (21) of every converter (20) and the discharge line (41) of every evaporator (40). The sampling elements (7) supply the test samples taken to at least one gas chromatograph (2) via respective lines (8).