公开(公告)号：AU5623594A

公开(公告)日：1994-07-04

申请号：AU5623594

申请日：1993-12-07

Applicant: VISCOR PETR

Inventor： VISCOR PETR ,  VEDDE JAN

IPC: G01R31/26 ,  G01N27/02

公开(公告)号：ZA200006692B

公开(公告)日：2002-02-18

申请号：ZA200006692

申请日：2000-11-16

Applicant: VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

Inventor： VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J ,  H01L

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：AT163094T

公开(公告)日：1998-02-15

申请号：AT94901781

申请日：1993-12-07

Applicant: VISCOR PETR

Inventor： VISCOR PETR ,  VEDDE JAN

IPC: G01R31/26 ,  G01N27/02

公开(公告)号：DK146692D0

公开(公告)日：1992-12-07

申请号：DK146692

申请日：1992-12-07

Applicant: VISCOR PETR ,  VEDDE JAN

Inventor： VISCOR PETR ,  VEDDE JAN

IPC: G01R31/26

公开(公告)号：AT249094T

公开(公告)日：2003-09-15

申请号：AT99926278

申请日：1999-06-11

Applicant: VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

Inventor： VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J1/30

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：HK1034358A1

公开(公告)日：2001-10-19

申请号：HK01104860

申请日：2001-07-12

Applicant: VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

Inventor： VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J ,  H01L

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：DE69316924T2

公开(公告)日：1998-08-27

申请号：DE69316924

申请日：1993-12-07

Applicant: VISCOR PETR

Inventor： VISCOR PETR ,  VEDDE JAN

IPC: G01R31/26 ,  G01N27/02

公开(公告)号：DE69316924D1

公开(公告)日：1998-03-12

申请号：DE69316924

申请日：1993-12-07

Applicant: VISCOR PETR

Inventor： VISCOR PETR ,  VEDDE JAN

IPC: G01R31/26 ,  G01N27/02

公开(公告)号：DE69911012T2

公开(公告)日：2004-06-17

申请号：DE69911012

申请日：1999-06-11

Applicant: VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

Inventor： VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J1/30

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

公开(公告)号：DE69911012D1

公开(公告)日：2003-10-09

申请号：DE69911012

申请日：1999-06-11

Applicant: VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

Inventor： VISCOR PETR ,  NIELSEN NIELS OLE ,  DELONG ARMIN ,  KOLARIK VLADIMIR

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J29/04 ,  H01J29/10 ,  H01J29/44 ,  H01J31/12 ,  H01J37/073 ,  H01J63/06 ,  H01J63/08 ,  H01L29/76 ,  H01L31/10 ,  H01L33/00 ,  H01J1/30

Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.