公开(公告)号：KR1020080008619A

公开(公告)日：2008-01-24

申请号：KR1020060068087

申请日：2006-07-20

Applicant: 삼성전자주식회사

Inventor： 허승현 ,  홍권삼 ,  최상건 ,  손현덕

IPC: H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  H01L27/1288 ,  H01L29/41733

Abstract: A thin film transistor substrate and a manufacturing method thereof are provided to improve image quality and enhance an aperture ratio by using a transparent storage electrode. A thin film transistor substrate includes a storage electrode(10), a gate electrode(20), a semiconductor film pattern(40), source and drain electrodes(51,52), insulation layers(70,80), and a pixel electrode(90). The storage electrode is formed at pixel regions on a substrate. The gate electrode is formed apart from the storage electrode in the respective pixel regions. The semiconductor film pattern which is formed on the gate electrode, includes active and ohmic contact patterns. The source and drain electrodes are formed apart from one another on the semiconductor film pattern. The insulation layers which are formed on the substrate, include contact holes exposing the drain electrode. The pixel electrode formed on the insulation layers is connected to the drain electrode through the contact hole.

Abstract translation: 提供一种薄膜晶体管基板及其制造方法，以通过使用透明存储电极来提高图像质量并提高开口率。 薄膜晶体管基板包括存储电极（10），栅电极（20），半导体膜图案（40），源极和漏极（51,52），绝缘层（70,80）和像素电极 （90）。 存储电极形成在基板上的像素区域。 栅电极与各像素区域中的存储电极分开形成。 形成在栅电极上的半导体膜图案包括有源和欧姆接触图案。 源极和漏极在半导体膜图案上彼此分开地形成。 形成在基板上的绝缘层包括露出漏电极的接触孔。 形成在绝缘层上的像素电极通过接触孔与漏电极连接。