公开(公告)号：KR100459101B1

公开(公告)日：2004-12-03

申请号：KR1020020028052

申请日：2002-05-21

Applicant: 삼성전자주식회사 ,  제일모직주식회사

Inventor： 이재석 ,  도원중 ,  노현수 ,  이길성 ,  이종원 ,  윤보언 ,  하상록 ,  박준상 ,  홍창기

IPC: H01L21/304

Abstract: PURPOSE: A slurry composition for chemical mechanical polishing of metal wiring is provided to improve a polishing rate and planarization as well as distribution stability and polishing repeatability by adding a propylene diamine tetra acetate(PDTA)-metal complex and carboxyl acid to a slurry composition for polishing nonspecific metal layer using a small quantity of peroxide and inorganic acid. CONSTITUTION: The CMP slurry composition for the metal wiring includes a PDTA-metal complex, carboxyl acid, metal oxide powder and deionized water wherein bonding energy of peroxide, inorganic acid, metal atoms and oxygen atoms is less than that of O and W. The peroxide is 0.5-5 weight percent. The inorganic acid is 0.001-5.0 weight percent. The PDTA-metal complex is 0.001-0.5 weight percent. The carboxyl acid is 0.1-10 weight percent. The metal oxide powder is 0.1-10 weight percent. The rest of the CMP slurry composition is deionized water.

Abstract translation: 目的：通过将丙二胺四乙酸酯（PDTA） - 金属配合物和羧酸加入到用于金属配线的浆料组合物中以提高抛光速率和平面化以及分配稳定性和抛光重复性，提供用于金属配线的化学机械抛光的浆料组合物 使用少量过氧化物和无机酸抛光非特异性金属层。 构成：用于金属布线的CMP浆料组合物包括PDTA-金属络合物，羧酸，金属氧化物粉末和去离子水，其中过氧化物，无机酸，金属原子和氧原子的键能小于O和W. 过氧化物为0.5-5重量％。 无机酸为0.001-5.0重量％。 PDTA-金属络合物为0.001-0.5重量％。 羧酸为0.1-10重量％。 金属氧化物粉末为0.1-10重量％。 CMP浆料组合物的其余部分是去离子水。

公开(公告)号：KR1020030014338A

公开(公告)日：2003-02-17

申请号：KR1020020028052

申请日：2002-05-21

Applicant: 삼성전자주식회사 ,  제일모직주식회사

Inventor： 이재석 ,  도원중 ,  노현수 ,  이길성 ,  이종원 ,  윤보언 ,  하상록 ,  박준상 ,  홍창기

IPC: H01L21/304

Abstract: PURPOSE: A slurry composition for chemical mechanical polishing of metal wiring is provided to improve a polishing rate and planarization as well as distribution stability and polishing repeatability by adding a propylene diamine tetra acetate(PDTA)-metal complex and carboxyl acid to a slurry composition for polishing nonspecific metal layer using a small quantity of peroxide and inorganic acid. CONSTITUTION: The CMP slurry composition for the metal wiring includes a PDTA-metal complex, carboxyl acid, metal oxide powder and deionized water wherein bonding energy of peroxide, inorganic acid, metal atoms and oxygen atoms is less than that of O and W. The peroxide is 0.5-5 weight percent. The inorganic acid is 0.001-5.0 weight percent. The PDTA-metal complex is 0.001-0.5 weight percent. The carboxyl acid is 0.1-10 weight percent. The metal oxide powder is 0.1-10 weight percent. The rest of the CMP slurry composition is deionized water.

Abstract translation: 目的：提供金属配线的化学机械抛光用浆料组合物，通过向丙烯二胺四乙酸盐（PDTA） - 金属络合物和羧酸加入到浆料组合物中以提高抛光速率和平面化，以及分布稳定性和抛光重复性 使用少量的过氧化物和无机酸抛光非特异性金属层。 构成：金属布线的CMP浆料组合物包括PDTA-金属络合物，羧酸，金属氧化物粉末和去离子水，其中过氧化物，无机酸，金属原子和氧原子的结合能小于O和W的结合能。 过氧化物为0.5-5重量％。 无机酸为0.001-5.0重量％。 PDTA-金属络合物为0.001-0.5重量％。 羧酸为0.1-10重量％。 金属氧化物粉末为0.1-10重量％。 CMP浆料组合物的其余部分是去离子水。

公开(公告)号：KR102068163B1

公开(公告)日：2020-01-20

申请号：KR1020130021434

申请日：2013-02-27

Applicant: 삼성전자주식회사

Inventor： 이길성 ,  장재훈 ,  김기현 ,  심선일

IPC: G11C16/34 ,  G11C16/26