公开(公告)号：KR1020110011003A

公开(公告)日：2011-02-08

申请号：KR1020090068415

申请日：2009-07-27

Applicant: 삼성전자주식회사 ,  서울대학교산학협력단

Inventor： 박영준 ,  황농문 ,  정용빈 ,  양승민 ,  박순영

IPC: H01L21/205

CPC classification number: C23C16/455

Abstract: PURPOSE: A hotwire chemical vapor deposition device and a thin film manufacturing method thereof are provided to improve the uniformity of a thin film by controlling electric field which is generated from the hotwire during a thin film deposition process. CONSTITUTION: A substrate is installed inside a chamber(110). A first bias voltage apply part(114) applies a first bias voltage to the substrate. A gas supply part supplies reaction gas to the chamber. A hotwire(130) emits heat which dissociates the reaction gas and is arranged within the chamber. A voltage apply part applies a second bias voltage to the hotwire. A control part controls a voltage which is supplied from the first bias voltage apply part and the second bias voltage apply part.

Abstract translation: 目的：提供一种热线化学气相沉积装置及其薄膜制造方法，以通过控制在薄膜沉积工艺期间由热丝产生的电场来改善薄膜的均匀性。 构成：衬底安装在腔室110内。 第一偏置电压施加部分（114）向衬底施加第一偏置电压。 气体供应部分向反应室供应反应气体。 热线（130）发射热量，其解离反应气体并且布置在室内。 电压施加部分将第二偏置电压施加到热线。 控制部分控制从第一偏压施加部分和第二偏压施加部分提供的电压。