양자점 발광 소자 및 이의 제조 방법
    12.
    发明公开
    양자점 발광 소자 및 이의 제조 방법 有权
    量子发光二极管及其制造方法

    公开(公告)号:KR1020110127897A

    公开(公告)日:2011-11-28

    申请号:KR1020100047397

    申请日:2010-05-20

    Abstract: PURPOSE: A quantum dot light emitting device and a manufacturing method thereof are provided to reduce manufacturing costs by forming a quantum light emitting layer and a charge transport layer by a solution process. CONSTITUTION: An anode(210) is formed in the top of a substrate. A quantum light-emitting layer(230) is formed on the anode and a charge transport particle and a quantum dot are mixed. A cathode is formed on the quantum light-emitting layer. A charge transport particle is an oxide nano particle. The diameter of a quantum dot is 2nm to 20nm. An electron-transport layer(240a) is composed an N-type semiconductor nano particle and is formed on the quantum light-emitting layer.

    Abstract translation: 目的:提供量子点发光器件及其制造方法,通过溶液法形成量子发光层和电荷输送层来降低制造成本。 构成:在衬底的顶部形成阳极(210)。 在阳极上形成量子发光层(230),电荷输送粒子和量子点混合。 在量子发光层上形成阴极。 电荷输送粒子是氧化物纳米粒子。 量子点的直径为2nm至20nm。 电子传输层(240a)由N型半导体纳米颗粒组成,并形成在量子发光层上。

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