Abstract:
본 발명은 p형 전도성을 나타내는 SrCu 2 O 2 계 투명 산화물 반도체 조성물 및 그 제조방법에 관한 것으로서, 보다 상세하게는 p형 투명 산화물 반도체인 SrCu 2 O 2 의 p형 전기전도성을 증진할 목적으로 SrCu 2 O 2 의 원자가가 +2인 Sr의 일부를 원자가가 +1인 K와 Ag로 공도핑함으로써 도핑량을 현저히 증가시켜서 전기전도도 특성을 향상시킨 복합금속산화물로 이루어지는 SrCu 2 O 2 계 투명 산화물 반도체 조성물 및 그 제조방법을 제공한다. 본 발명에 의하면, SrCu 2 O 2 의 p형 전기전도성의 향상을 위하여 첨가하는 원자가가 +1인 K의 도핑량의 한계인 3 atomic%를 상회하는 Ag와 K의 합산 도핑량 기준, 25 atomic%의 치환 도핑이 가능하여 종래에 비하여 약 42배에 달하는 전기전도도의 증진을 나타내는 작용효과가 기대된다. p형 전도성, SrCu2O2, 투명 산화물 반도체, K, Ag, 공도핑, 조성물, 전기전도도
Abstract:
PURPOSE: A manufacturing method of super hydrophilic titanium oxide thin film and a titanium oxide thin film which is manufactured by using thereof are provided to improve light transparency and to have super hydrophilicity by using sol-gel process. CONSTITUTION: A manufacturing method of super hydrophilic titanium oxide thin film comprises the following steps: mixing titanium tetraisoproxide, isopropyl alcoho, acid catalyst, and ethyl alcohol in order to form sol; coating the sol on the substrate in order to form TiO2 thin film; making the sol to gel by drying the substrate on which the sol is coated; and forming a TiO2 thin film by heat treating the gelled outcome at 400-650 deg. Celsius. A molar ratio of titanium tetraisoproxide, isopropyl alcoho, acid catalyst, and ethyl alcohol is 1:10-30:2-10:0.2-3.
Abstract:
PURPOSE: A manufacturing method of a transparent oxide semiconductor composition is provided to increase the dopant amount added into the SrCu2O2 based transparent oxide semiconductor composition by using a co-doping method, thereby capable of manufacturing transparent oxide semiconductor composition with improved physical properties . CONSTITUTION: A manufacturing method of a transparent oxide semiconductor composition of p-type SrCu2O2 comprises: a step of mixing CuO, SrCO3, K2CO3, and Ag2O; a step of conducting first-calcination the mixture; a step of crushing the mixture conducting second-calcination; and a step of crushing the mixture, molding the mixture, and plasticizing the mixture in nitrogen atmosphere.
Abstract translation:目的:提供透明氧化物半导体组合物的制造方法,以通过使用共掺杂方法来增加添加到SrCu 2 O 2的透明氧化物半导体组合物中的掺杂剂量,从而能够制造具有改善的物理性质的透明氧化物半导体组合物。 构成:p型SrCu 2 O 2的透明氧化物半导体组合物的制造方法包括:将CuO,SrCO 3,K 2 CO 3和Ag 2 O混合的工序; 混合物首先进行煅烧的步骤; 粉碎进行第二次煅烧的混合物的步骤; 以及粉碎混合物的步骤,将混合物成型,并在氮气气氛中使混合物增塑。
Abstract:
PURPOSE: A solar battery with an electricity charging device and a manufacturing method thereof are provided to obtain stability when a solar battery is operated even when the amount of receiving light is small or the amount of energy outputted from the solar battery is too much. CONSTITUTION: An electricity charging device includes a cathode, a conductive layer, an electrode active material layer, an electricity charging device, a titania layer, and an anode. A separation film is formed on the conductive layer. The cathode is made of glass materials on which white gold is coated. The anode is made of glass materials on which FTO(Fluorine Tin Oxide) is coated.
Abstract:
PURPOSE: A method for preparing an SrCu2O2-based transparent oxide semiconductor composition is provided to obtain an SrCu2O2-based transparent oxide semiconductor with improved p-type electric conductivity by increasing the amount of dopants using a co-doping method. CONSTITUTION: A method for preparing an SrCu2O2-based transparent oxide semiconductor composition having p-type electric conductivity is obtained by substituting and co-doping potassium(K) and silver(Ag) at a position of strontium(Sr). A method for preparing the oxide semiconductor composition comprises the steps of: mixing cupric oxide(CuO), strontium carbonate(SrCO3), calcium carbonate(K2CO3) and silver oxide(Ag2O); calcining the mixture in a nitrogen atmosphere; pulverizing the calcined material and calcining again the resultant; and pulverizing the secondary calcined material, molding the pulverized material, and calcining the resultant in a nitrogen atmosphere.
Abstract translation:目的:提供一种制备SrCu2O2基透明氧化物半导体组合物的方法,以通过使用共掺杂方法增加掺杂剂的量来获得具有改善的p型导电性的SrCu 2 O 2基透明氧化物半导体。 构成:通过在锶(Sr)的位置上取代并共同掺杂钾(K)和银(Ag),获得制备具有p型导电性的SrCu 2 O 2基透明氧化物半导体组合物的方法。 制备氧化物半导体组合物的方法包括以下步骤:将氧化铜(CuO),碳酸锶(SrCO 3),碳酸钙(K 2 CO 3)和氧化银(Ag 2 O)混合; 在氮气气氛中煅烧该混合物; 粉碎煅烧的材料并再次煅烧所得物; 粉碎二次煅烧材料,成型粉碎物,并在氮气气氛中煅烧所得物。