公开(公告)号：KR1019960012579B1

公开(公告)日：1996-09-23

申请号：KR1019880006395

申请日：1988-05-31

Applicant: 현대반도체 주식회사 ,  한국전자통신연구원

Inventor： 김영한

IPC: H01L29/70

Abstract: The method of manufacturing transistor comprises the steps of : taper etching of an oxide silicon layer(3) formed on a base region(2); and diffusing an emitter impurity injected by ion-injection of emitter impurity to the base region(2). The transistor increases the effective area of the emitter for high integrity.

Abstract translation: 制造晶体管的方法包括以下步骤：对形成在基极区域（2）上的氧化硅层（3）进行锥形刻蚀; 以及通过离子注入发射极杂质注入的发射极杂质扩散到基极区域（2）。 该晶体管增加了发射器的高完整性的有效面积。