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公开(公告)号:US20180308632A1
公开(公告)日:2018-10-25
申请号:US15961413
申请日:2018-04-24
Applicant: ABB Schweiz AG
Inventor: Alberto Prieto , Ion C. Radu , Nikolaus Zant , Sandeep Bala , Matthew Lee Henriksen , Parag Upadhyay
Abstract: Unique systems, methods, techniques and apparatuses of a modular power transformer are disclosed. One exemplary embodiment is a matrix power transformer including a plurality of block assemblies each including a plurality of transformer modules, each transformer module including a primary winding coupled to an input and a secondary winding coupled to an output, the inputs of each transformer module in one block assembly being coupled together and the outputs of each transformer block being coupled together. One of the secondary windings includes a plurality of taps structured to be selectively coupled to the output of the associated transformer module assembly or another secondary winding of the associated module assembly.
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12.
公开(公告)号:US20180191142A1
公开(公告)日:2018-07-05
申请号:US15740518
申请日:2015-07-06
Applicant: ABB SCHWEIZ AG
Inventor: Dariusz Bednarowski , Emmanuel Logakis , Jörn Antonischki , Julita Krol , Lei Xie , Nikolaus Zant
CPC classification number: H02G1/145 , B29C45/14549 , B29C45/1671 , B29C45/2673 , B29C45/2708 , B29C45/28 , B29C2045/2714 , H01B9/027 , H01B13/06 , H01L21/0243 , H01L23/142
Abstract: A method of building an insulation system around a naked conductor section of a power cable. The insulation system includes an inner semiconducting layer arranged around the conductor, an insulation layer arranged around the inner semiconducting layer, and an outer semiconducting layer arranged around the insulation layer. The method includes: a) placing the naked conductor section in a mold, and b) molding an insulation system around the naked conductor section, wherein the molding of the insulation system involves injecting a first semiconducting compound into a first mold cavity to form an inner semiconducting layer around the naked conductor section, injecting an insulation compound into a second mold cavity to form an insulation layer around the inner semiconducting layer, and injecting a second semiconducting compound into a third mold cavity to form an outer semiconducting layer around the insulation layer.
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