公开(公告)号：EP3210243A1

公开(公告)日：2017-08-30

申请号：EP14776845.1

申请日：2014-09-24

Applicant: ABB Schweiz AG

Inventor： ABPLANALP, Markus ,  GATI, Rudolf ,  WULF, Thomas ,  STRASSEL, Thorsten

IPC: H01L31/02 ,  H02S50/10

CPC classification number: H02S50/10 ,  H01L31/02021

Abstract: The method of the invention is performed in a combiner box of a DC part of a PV plant before start-up and forms a measuring circuit in which at least one of the direction of a DC current, the polarity of a voltage or a ground fault is measured and in which the result of the measurement is used to determine an installation error in the DC part.

Abstract translation: 本发明的方法在启动之前在PV设备的DC部件的组合器盒中执行，并且形成测量电路，其中DC电流的方向，电压的极性或接地故障中的至少一个 被测量并且其中测量结果被用于确定DC部分中的安装误差。

公开(公告)号：WO2013004297A1

公开(公告)日：2013-01-10

申请号：PCT/EP2011/061289

申请日：2011-07-05

Applicant: ABB TECHNOLOGY AG ,  WILDNER, Franz ,  STRASSEL, Thorsten

Inventor： WILDNER, Franz ,  STRASSEL, Thorsten

IPC: H01L23/02 ,  H01L25/07 ,  H01L25/11 ,  H01L23/051

CPC classification number: H01L23/62 ,  H01L23/051 ,  H01L25/072 ,  H01L25/117 ,  H01L2924/0002 ,  H01L2924/13055 ,  H03K17/06 ,  H03K17/127 ,  H01L2924/00

Abstract: A circuit comprising a power semiconductor module (200) having an improved short-circuit failure mode (SCFM) is provided. The power semiconductor module comprises at least two semiconductor devices (211-216) being arranged for transitioning into SCFM in the event of a device failure, a collector terminal for collectively connecting the collectors of the devices, and an emitter terminal for collectively connecting the emitters of the devices. The circuit further comprises means (240) for supplying, in response to one (211) of the semiconductor devices transitioning into SCFM, a high-voltage pulse to the gate of the other semiconductor device (212-216), thereby triggering a transitioning of the other device into SCFM. This is advantageous in that it leads to an improved current distribution within the module since the current is shared by more than one short-circuited device. Further, a method of a power semiconductor module is provided.

Abstract translation: 提供一种包括具有改进的短路故障模式（SCFM）的功率半导体模块（200）的电路。 功率半导体模块包括至少两个半导体器件（211-216），用于在器件故障的情况下转换成SCFM，用于集体连接器件的集电极的集电极端子和用于共同连接发射器的发射极端子 的设备。 电路还包括用于响应于转换到SCFM的半导体器件中的一个（211）向另一个半导体器件（212-216）的栅极提供高电压脉冲的装置（240），由此触发 其他设备进入SCFM。 这是有利的，因为它导致模块内的改善的电流分布，因为电流被多于一个短路装置共享。 此外，提供了功率半导体模块的方法。

公开(公告)号：EP2729964A1

公开(公告)日：2014-05-14

申请号：EP11729314.2

申请日：2011-07-05

Applicant: ABB Technology AG

Inventor： WILDNER, Franz ,  STRASSEL, Thorsten

IPC: H01L23/02 ,  H01L25/07 ,  H01L25/11 ,  H01L23/051

CPC classification number: H01L23/62 ,  H01L23/051 ,  H01L25/072 ,  H01L25/117 ,  H01L2924/0002 ,  H01L2924/13055 ,  H03K17/06 ,  H03K17/127 ,  H01L2924/00

Abstract: A circuit comprising a power semiconductor module (200) having an improved short-circuit failure mode (SCFM) is provided. The power semiconductor module comprises at least two semiconductor devices (211-216) being arranged for transitioning into SCFM in the event of a device failure, a collector terminal for collectively connecting the collectors of the devices, and an emitter terminal for collectively connecting the emitters of the devices. The circuit further comprises means (240) for supplying, in response to one (211) of the semiconductor devices transitioning into SCFM, a high-voltage pulse to the gate of the other semiconductor device (212-216), thereby triggering a transitioning of the other device into SCFM. This is advantageous in that it leads to an improved current distribution within the module since the current is shared by more than one short-circuited device. Further, a method of a power semiconductor module is provided.