公开(公告)号：JP2011079917A

公开(公告)日：2011-04-21

申请号：JP2009231970

申请日：2009-10-05

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： HARA KENJI ,  KOBAYASHI JUN ,  YOKOTA HIROO ,  MORITA HIROSHI ,  SAITO SEIICHI

IPC: C08G77/62 ,  C08L83/16 ,  C09D5/25 ,  C09D7/12 ,  C09D183/16 ,  H01L21/314 ,  H01L21/316

CPC classification number: C08G77/62 ,  C08G77/12 ,  C08L83/16 ,  C09D1/00 ,  C09D183/16 ,  H01B3/02 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  Y10T428/24008

Abstract: PROBLEM TO BE SOLVED: To provide a coating liquid for forming an insulating film in which shrinkage in a baking step in steam is small and crack of a silica film and detachment thereof from a semiconductor substrate is hard to occur, an insulating film using the same, and a method for producing a compound used for the same. SOLUTION: The coating liquid for forming an insulating film includes: inorganic polysilazane having a ratio of a peak area of 4.5-5.3 ppm derived from an SiH 1 group and an SiH 2 group to a peak area of 4.3-4.5 ppm derived from an SiH 3 group of 4.2-50 in 1 H-NMR spectrum; and an organic solvent. The insulating film is obtained by using the coating liquid for forming an insulating film. The inorganic polysilazane is obtained by reacting a dihalosilane compound, a trihalosilane compound, or a mixture thereof with a base to form adducts, and subsequently by reacting ammonia with a solution or a dispersion of the adducts at -50 to -1°C. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种用于形成绝缘膜的涂布液，其中蒸汽中的烘烤步骤的收缩率小，并且难以发生二氧化硅膜的裂纹和与半导体衬底的分离，绝缘膜 使用它们的方法及其制备方法。 解决方案：用于形成绝缘膜的涂布液包括：由SiH 1 基团衍生的具有4.5-5.3ppm的峰面积比和SiH 2 的无机聚硅氮烷， / SB>组合，得到4.3-5.5ppm的峰，由4.2％的SiH 3 SBR 3 H-NMR光谱得到; 和有机溶剂。 通过使用用于形成绝缘膜的涂布液来获得绝缘膜。 无机聚硅氮烷是通过使二卤代硅烷化合物，三卤代硅烷化合物或其混合物与碱反应形成加合物，随后通过使氨与加合物的溶液或分散体在-50至-1℃反应而获得的。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010101957A

公开(公告)日：2010-05-06

申请号：JP2008270972

申请日：2008-10-21

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SAITO SEIICHI ,  MORITA HIROSHI ,  TAKENOUCHI HIROMI ,  KOBAYASHI JUN ,  OMI JINICHI

IPC: G03F7/075 ,  C08G77/16 ,  G02F1/1333 ,  G03F7/023 ,  G03F7/40 ,  H01L21/027 ,  H01L51/50 ,  H05B33/22

CPC classification number: G03F7/0757 ,  C08G77/16 ,  C08G77/18 ,  G03F7/0233 ,  G03F7/40 ,  H05B33/10 ,  H05B33/22

Abstract: PROBLEM TO BE SOLVED: To provide a positive photosensitive composition which is excellent in transparency and provides a permanent resist having such high heat resistance and chemical resistance after high-heat history that it is also used as an insulating film above an active matrix substrate, a permanent resist using the positive photosensitive composition and a method for producing the same. SOLUTION: The positive photosensitive composition includes (A) a silicone resin having at least two groups per molecule represented by general formula (1) (wherein, R 1 denotes a 1-10C alkylene group which may have a substituted hydrocarbon group, R 2 denotes a 1-4C alkyl group, a denotes an integer of 0 or 1-4, b denotes an integer of 1-3, and a+b does not exceed 5), (B) a siloxane compound having a glycidyl group, (C) diazonaphthoquinones and (D) an organic solvent. The permanent resist is produced by applying the positive photosensitive composition on a substrate and subjecting the resulting coating to exposure, alkali development and post-bake at 120-350°C. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供透明性优异的正性感光性组合物，并且在高热历史之后提供具有如此高的耐热性和耐化学性的永久性抗蚀剂，它也用作有源矩阵上的绝缘膜 基板，使用正性感光性组合物的永久抗蚀剂及其制造方法。 正光敏组合物包括（A）每分子具有至少两个由通式（1）表示的基团的有机硅树脂（其中，R SP 1表示1-10C亚烷基，其中， 可以具有取代的烃基，R 2是表示1-4C的烷基，a表示0或1-4的整数，b表示1-3的整数，a + b不是 超过5），（B）具有缩水甘油基的硅氧烷化合物，（C）重氮萘醌和（D）有机溶剂。 永久抗蚀剂通过将正性感光性组合物涂布在基材上并使所得涂层在120-350℃下进行曝光，碱显影和后烘烤来制造。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009215343A

公开(公告)日：2009-09-24

申请号：JP2008057339

申请日：2008-03-07

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： MORITA HIROSHI ,  SATO HIROMI ,  SAITO SEIICHI

IPC: C08G77/04 ,  C08G77/16 ,  H01J9/02 ,  H01J11/02 ,  H01J11/22 ,  H01J11/34 ,  H01J11/38

Abstract: PROBLEM TO BE SOLVED: To provide a low dielectric thermosetting resin which can be formed at a low temperature, is excellent in heat resistance, and can lighten plasma displays. SOLUTION: Provided is a thermosetting resin prepared by hydrolyzing a compound (1) (wherein, R 1 to R 3 are each identically or differently a straight chain or branched chain 1 to 4C alkyl group; R 4 is H or a straight chain or branched chain 1 to 4C alkyl group) and a compound (2) (wherein, R 5 to R 8 are each identically or differently a straight chain or branched chain 1 to 4C alkyl group) in a (1):(2) molar ratio of 70:30 to 90:10, and having a mol.wt. of ≥10,000. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供可以在低温下形成的低介电性热固性树脂，耐热性优异，并且可以减轻等离子体显示器。 解决方案：提供通过水解化合物（1）（其中R 1和R 3各自相同或不同的直链或支链的化合物（1） 1至4C链烷基; R 4是H或直链或支链1至4个碳原子的烷基）和化合物（2）（其中，R 1〜 （1）：（2）摩尔比为70:30至90:10的R“SP”8各自相同或不同的直链或支链1至4C烷基），并且具有摩尔 .wt。 ≥10,000。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008169336A

公开(公告)日：2008-07-24

申请号：JP2007005223

申请日：2007-01-12

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SAITO MASAKO ,  OMI JINICHI ,  SAKAMAKI KOICHI ,  MORITA HIROSHI

IPC: C09D9/00

Abstract: PROBLEM TO BE SOLVED: To provide a resin removing agent which is capable of favorably removing a curable cyclic silicone compound not only before it is baked but also after it is baked.
SOLUTION: The resin removing agent is a solution which comprises a block polyether-modified silicone compound comprising a quaternary ammonium compound expressed by the general formula (R
1 )
3 -N
+ -R
2 -X
- , a quaternary ammonium compound expressed by the general formula (R
3 )
4 -N
+ -X
- , a silicone moiety and a polyether moiety, and a solvent.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种树脂去除剂，其能够不仅在其烘烤之前而且在烘烤之后能有利地除去可固化的环状硅氧烷化合物。 解决方案：树脂去除剂是包含嵌段聚醚改性的硅氧烷化合物的溶液，所述嵌段聚醚改性的硅氧烷化合物包含由通式（R 1 SP＆lt; SP＆gt;）＆lt; SB＆gt; 3＆lt; 由通式（R 3 SP 3）表示的季铵化合物，其中R 1，R 2，R 3，R 3， ），硅氧烷部分和聚醚部分以及溶剂。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006232970A

公开(公告)日：2006-09-07

申请号：JP2005048747

申请日：2005-02-24

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： OMI JINICHI ,  SAKAMAKI KOICHI ,  MORITA HIROSHI ,  SAITO MASAKO

IPC: C08L83/14 ,  C08G77/50 ,  C08K5/5425

CPC classification number: C08G77/52 ,  C08G77/045 ,  C08G77/12 ,  C08G77/20 ,  C08G77/70 ,  C08K5/56 ,  C08L83/04 ,  C08L83/14 ,  C08L83/00 ,  C08L2666/52

Abstract: PROBLEM TO BE SOLVED: To provide a silicon-containing curable composition which has little out-gas component and is excellent in transparency and whose cured product has high heat resistance, is excellent in base resistance and crack resistance and is useful for electric/electronic materials. SOLUTION: The silicon-containing curable composition comprises a prepolymer (A) having two or more Si-H groups in one molecule obtained by hydrosilylation between one or more selected from a component (α) and one or more selected from a component (β) as described below, as a component (A); a cyclic siloxane compound (B) having in one molecule two or more carbon-carbon double bonds having reactivity with an Si-H group, as a component (B); and a hydrosilylation catalyst (C), as a component (C). The component (α) is a cyclic siloxane compound having two or more Si-H groups in one molecule represent by formula (1). The component (β) is a compound having two or more carbon-carbon double bonds having reactivity with an Si-H group. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题为了提供一种具有极少的气体成分并且透明度优异且其固化产物具有高耐热性的含硅可固化组合物，具有优异的耐碱性和抗裂性，并且可用于电 /电子材料。 解决方案：含硅可固化组合物包含在一个分子中具有两个或更多个Si-H基团的预聚物（A），其通过在选自组分（α）和选自组分 （β）作为组分（A）; 作为（B）成分的具有1个分子的具有与Si-H基具有反应性的2个以上碳 - 碳双键的环状硅氧烷化合物（B）。 和作为（C）成分的氢化硅烷化催化剂（C）。 组分（α）是在一个分子中具有两个或更多个Si-H基团的环状硅氧烷化合物，由式（1）表示。 组分（β）是具有与Si-H基具有反应性的两个或多个碳 - 碳双键的化合物。 版权所有（C）2006，JPO＆NCIPI