公开(公告)号：JP2013032309A

公开(公告)日：2013-02-14

申请号：JP2011169103

申请日：2011-08-02

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： WADA SENJI ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07C215/08 ,  C07F15/04 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/045 ,  C07C215/08 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45553

Abstract: PROBLEM TO BE SOLVED: To provide a nickel compound which can be transported in a liquid state because of its low melting point, is easily vaporized because of its high vapor pressure, and is suitable as a raw material for depositing a thin film used in a method such as CVD which deposits a thin film by vaporizing a compound (precursor).SOLUTION: The nickel compound is an alkoxide compound represented by general formula (I), wherein Rrepresents a 2-4C linear or branched alkyl group; and Rrepresents a 1-4C linear or branched alkyl group.

Abstract translation: 要解决的问题：为了提供由于其低熔点而能够以液态运输的镍化合物，由于其高蒸气压而容易蒸发，并且适合作为沉积薄膜的原料 用于通过汽化化合物（前体）沉积薄膜的CVD等方法。 解决方案：镍化合物是由通式（I）表示的醇盐化合物，其中R 1表示2-4C直链或支链烷基; 并且R 2 表示1-4C直链或支链烷基。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2011195474A

公开(公告)日：2011-10-06

申请号：JP2010061460

申请日：2010-03-17

Applicant: Adeka Corp ,  Samsung Electronics Co Ltd ,  三星電子株式会社Samsung Electronics Co.,Ltd. ,  株式会社Adeka

Inventor： YOSHINAKA ATSUYA ,  WADA SENJI ,  SAKURAI ATSUSHI ,  SHIMIZU MASAKO ,  SATO HARUYOSHI ,  KAMIYAMA JUNJI ,  YOSHINO TOMOHARU ,  CHOI JUNG-SIK ,  LEE TEIKO ,  CHO YOUN-JOUNG ,  RI CHINZUI

IPC: C07C251/08 ,  C07F3/00 ,  C23C16/18

Abstract: PROBLEM TO BE SOLVED: To provide a metal complex having properties suitable for precursors of CVD method and ALD method, especially, excellent melting point, heat resistance and solubility in organic solvents.SOLUTION: The metal complex of a β-ketoimine compound represented by formula (1) (wherein Rand Rare each methyl or ethyl), preferably a metal complex in which a metal atom in the metal complex represented by formula (1) is a metal element of the group 2, especially strontium and the valence of the metal atom is 2, is provided.

Abstract translation: 要解决的问题：提供一种具有适用于CVD法和ALD法前体特性的金属络合物，特别是优异的熔点，耐热性和在有机溶剂中的溶解性。解决方案：由式（I）表示的β-酮亚胺化合物的金属络合物 （1）（其中Rand Rare各自为甲基或乙基），优选金属络合物，其中由式（1）表示的金属络合物中的金属原子是第2族的金属元素，特别是锶和金属原子的价态 是2，被提供。

公开(公告)号：JP2009173587A

公开(公告)日：2009-08-06

申请号：JP2008014791

申请日：2008-01-25

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YAMADA NAOKI ,  YOSHINAKA ATSUYA ,  WADA SENJI

IPC: C07F7/28 ,  C23C16/34

CPC classification number: C07F7/006 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45553

Abstract: PROBLEM TO BE SOLVED: To provide a metal compound that gives a good metal-containing thin film containing little residual carbon and allows a process exhibiting a stable film formation speed and stable controllability of the thin film composition.
SOLUTION: The metal compound is represented by general formula (1) (wherein M is titanium, zirconium or hafnium; X is a halogen atom; and m is 1 or 2).
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种赋予含有少量残留碳的良好的含金属薄膜的金属化合物，并且允许显示出稳定的成膜速度和薄膜组合物的稳定可控性的方法。 解决方案：金属化合物由通式（1）表示（其中M为钛，锆或铪; X为卤素原子，m为1或2）。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006316317A

公开(公告)日：2006-11-24

申请号：JP2005139759

申请日：2005-05-12

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YOSHINAKA ATSUYA ,  WADA SENJI

IPC: C23C16/20 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a process suitable for producing an aluminum thin film by using a vapor evaporated from diisobutyl aluminum hydride; the aluminum thin film obtained by the production method; and a raw material for forming the thin film to be used in the method for producing the aluminum thin film.
SOLUTION: The production method comprises the steps of: preparing a vapor containing diisobutyl aluminum hydride obtained by evaporating a raw material containing diisobutyl aluminum hydride for forming the thin film; introducing the vapor onto a substrate in a system to form a thin layer containing aluminum on the substrate; then, discharging a gas remaining in a system; introducing a reductive gas into the system; and exerting the reductive gas and heat on the thin layer containing aluminum to form the aluminum thin film from the previously formed thin film containing aluminum.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种适用于通过使用从二异丁基氢化铝蒸发的蒸汽来生产铝薄膜的方法; 通过制造方法得到的铝薄膜; 以及用于形成用于制造铝薄膜的方法中的薄膜的原料。 解决方案：制备方法包括以下步骤：制备通过蒸发含有二异丁基氢化铝的原料形成薄膜得到的含二异丁基氢化铝的蒸气; 将蒸气引入系统中的衬底上以在衬底上形成含有铝的薄层; 然后排出残留在系统中的气体; 在系统中引入还原气体; 并在含有铝的薄层上施加还原性气体和热量，以从先前形成的含有铝的薄膜形成铝薄膜。 版权所有（C）2007，JPO＆INPIT